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公开(公告)号:US4581101A
公开(公告)日:1986-04-08
申请号:US657524
申请日:1984-10-04
申请人: Makoto Senoue , Kunihiko Terase , Shinya Iida , Hideo Komatsu
发明人: Makoto Senoue , Kunihiko Terase , Shinya Iida , Hideo Komatsu
IPC分类号: C09K13/08 , H01L21/02 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/00
CPC分类号: H01L21/02071 , H01L21/3065 , H01L21/31116 , H01L21/32137 , Y10S438/906
摘要: A dry-etching process comprising dry-etching treatment of semiconductor material by action of a gas and, if necessary, cleaning treatment, characterized in that at least one of the dry-etching and cleaning treatments is conducted under action of a gas composed essentially of a fluorinated ether.
摘要翻译: 一种干式蚀刻工艺,其包括通过气体的作用对半导体材料进行干法蚀刻处理,并且如果需要,进行清洁处理,其特征在于,干蚀刻和清洁处理中的至少一种在主要由以下组成的气体的作用下进行: 氟化醚。
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公开(公告)号:US4673558A
公开(公告)日:1987-06-16
申请号:US772431
申请日:1985-09-04
申请人: Makoto Senoue , Kunihiko Terase , Keiichi Nakaya
发明人: Makoto Senoue , Kunihiko Terase , Keiichi Nakaya
CPC分类号: B01D53/8659
摘要: A method for treating a waste gas containing a fluorine component and/or a chlorine component, which comprises contacting the waste gas with magnesium oxide particles having a specific surface area of from 100 to 200 m.sup.2 /g.
摘要翻译: 一种处理含有氟成分和/或氯成分的废气的方法,包括使废气与比表面积为100〜200m2 / g的氧化镁粒子接触。
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