公开(公告)号：US4581101A

公开(公告)日：1986-04-08

申请号：US657524

申请日：1984-10-04

申请人： Makoto Senoue ,  Kunihiko Terase ,  Shinya Iida ,  Hideo Komatsu

发明人： Makoto Senoue ,  Kunihiko Terase ,  Shinya Iida ,  Hideo Komatsu

IPC分类号： C09K13/08 ,  H01L21/02 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/00

CPC分类号： H01L21/02071 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137 ,  Y10S438/906

摘要： A dry-etching process comprising dry-etching treatment of semiconductor material by action of a gas and, if necessary, cleaning treatment, characterized in that at least one of the dry-etching and cleaning treatments is conducted under action of a gas composed essentially of a fluorinated ether.

摘要翻译： 一种干式蚀刻工艺，其包括通过气体的作用对半导体材料进行干法蚀刻处理，并且如果需要，进行清洁处理，其特征在于，干蚀刻和清洁处理中的至少一种在主要由以下组成的气体的作用下进行： 氟化醚。

公开(公告)号：US4352974A

公开(公告)日：1982-10-05

申请号：US173364

申请日：1980-07-29

申请人： Tatsumi Mizutani ,  Norio Kanai ,  Kunio Harada ,  Hideo Komatsu ,  Shinya Iida

发明人： Tatsumi Mizutani ,  Norio Kanai ,  Kunio Harada ,  Hideo Komatsu ,  Shinya Iida

IPC分类号： B23K10/00 ,  C30B33/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3215 ,  B23K9/00 ,  C23F1/02

CPC分类号： H01L21/3065 ,  B23K10/00 ,  C30B33/00 ,  H01J37/3244 ,  H01L21/32155

摘要： A plasma etcher wherein the provision of a gas outlet directly in an etching chamber is avoided and wherein a subchamber having a sufficient capacity is connected to the etching chamber through a joint part, the gas outlet being provided in this subchamber. With the apparatus, the distribution of etching rates in plasma etching becomes uniform.

摘要翻译： 一种等离子体蚀刻器，其中避免了直接在蚀刻室中提供气体出口，并且其中具有足够容量的子室通过接头部分连接到蚀刻室，气体出口设置在该子室中。 利用该装置，等离子体蚀刻中的蚀刻速率的分布变得均匀。

公开(公告)号：US4412119A

公开(公告)日：1983-10-25

申请号：US260813

申请日：1981-05-05

申请人： Hideo Komatsu ,  Shinya Iida ,  Tatsumi Mizutani ,  Kazuyoshi Ueki

发明人： Hideo Komatsu ,  Shinya Iida ,  Tatsumi Mizutani ,  Kazuyoshi Ueki

IPC分类号： H01L21/302 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/306

CPC分类号： H01L21/32136 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137

摘要： A dry-etching method for working SiO.sub.2, phospho-silicate glass, Si, Mo, W, Cr, TiW, Si.sub.3 N.sub.4 or the like by the use of a glow discharge plasma involves the steps of introducing He, Ar, N.sub.2, O.sub.2 or a mixed gas thereof into a reaction chamber from the outside; and effecting the plasma discharge in the reaction chamber so that a reactive gas is liberated from a high molecular resin material arranged in the reaction chamber and containing fluorine atoms. The dry-etching method requires and uses no expensive gas containing a fluorocarbon, but has sufficient etching rate and selectivity.

摘要翻译： 通过使用辉光放电等离子体，对SiO 2，磷硅酸盐玻璃，Si，Mo，W，Cr，TiW，Si 3 N 4等进行加工的干式蚀刻方法包括引入He，Ar，N 2，O 2或 其混合气体从外部进入反应室; 并且在反应室中进行等离子体放电，使得反应气体从布置在反应室中的含有氟原子的高分子树脂材料释放出来。 干蚀刻方法需要并且不使用含有碳氟化合物的昂贵的气体，但是具有足够的蚀刻速率和选择性。

公开(公告)号：US4308089A

公开(公告)日：1981-12-29

申请号：US148283

申请日：1980-05-09

申请人： Shinya Iida ,  Kazuyoshi Ueki ,  Tatsumi Mizutani ,  Hideo Komatsu ,  Kado Hirobe

发明人： Shinya Iida ,  Kazuyoshi Ueki ,  Tatsumi Mizutani ,  Hideo Komatsu ,  Kado Hirobe

IPC分类号： C23F4/00 ,  C23F15/00 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/3213 ,  H01L23/52 ,  C23F1/02 ,  C23C15/00 ,  C23G1/02

CPC分类号： H01L21/02071 ,  C23F4/00 ,  H01L21/321

摘要： Disclosed is a method for preventing corrosion of Al and Al alloys processed by the dry-etching method, which comprises (i) the step of sputtering Al or Al alloy in an ammonia-containing atmosphere and (ii) the step of washing the sputtered Al or Al alloy with an alkaline aqueous solution and then with water after termination of the step (i).According to this method, corrosion of Al or Al alloy by halogen element-containing substances stuck to Al or Al alloy during the dry-etching treatment can be effectively prevented.

摘要翻译： 本发明公开了一种防腐蚀方法，该方法包括：（i）在含氨气氛中溅射Al或Al合金的步骤，以及（ii）将溅射的Al 或Al合金与碱性水溶液反应，然后在步骤（i）终止后与水合并。 根据该方法，可以有效地防止在干法蚀刻处理中在Al或Al合金上粘附含卤素元素的Al或Al合金的腐蚀。

公开(公告)号：US4289188A

公开(公告)日：1981-09-15

申请号：US150939

申请日：1980-05-19

申请人： Tatsumi Mizutani ,  Kazuyoshi Ueki ,  Shinya Iida ,  Hideo Komatsu

发明人： Tatsumi Mizutani ,  Kazuyoshi Ueki ,  Shinya Iida ,  Hideo Komatsu

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/306 ,  C23F1/00

CPC分类号： H01L21/32136 ,  C23F4/00 ,  H01J37/32935 ,  H01L21/02019

摘要： Method and apparatus for monitoring a dry etching process using gas plasma, wherein a ratio of a spectrum intensity which varies depending on the process of the etching process to a spectrum intensity which is independent of the process of the etching process is determined and a resulting signal intensity is monitored. The completion of the etching process can be exactly determined irrespective of variation of the etching conditions.

摘要翻译： 用于使用气体等离子体监测干蚀刻工艺的方法和装置，其中确定根据蚀刻工艺的过程而变化的光谱强度与不同于蚀刻工艺的工艺的光谱强度的比率，并且得到所得到的信号 监测强度。 蚀刻工艺的完成可以精确地确定，而与蚀刻条件的变化无关。

公开(公告)号：US4267013A

公开(公告)日：1981-05-12

申请号：US45744

申请日：1979-06-05

申请人： Shinya Iida ,  Kazuyoshi Ueki ,  Hideo Komatsu ,  Tatsumi Mitzutani

发明人： Shinya Iida ,  Kazuyoshi Ueki ,  Hideo Komatsu ,  Tatsumi Mitzutani

IPC分类号： C09K13/10 ,  C23F4/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  C23F1/00 ,  C23F1/02

CPC分类号： H01L21/02071 ,  C09K13/10 ,  C23F4/00

摘要： A method for dry-etching Al and Al alloys is disclosed, which comprises producing plasma discharges with a mixed gas comprising boron trichloride and freon and/or oxygen incorporated therein and patterning Al or an Al alloy by the produced discharges. In this dry etching method, the etch rate of Al or an Al alloy can be remarkably improved over the etch rate attainable according to the conventional techniques, and the difference of the etch rate between Al or an Al alloy and other material can be remarkably increased.

摘要翻译： 公开了一种用于干法蚀刻Al和Al合金的方法，其包括用包含三氯化硼和氟利昂和/或氧气的混合气体产生等离子体放电，并通过产生的放电图案化Al或Al合金。 在这种干蚀刻方法中，Al或Al合金的蚀刻速率可以比根据常规技术可获得的蚀刻速率显着提高，Al或Al合金与其它材料之间的蚀刻速率差可以显着增加 。

公开(公告)号：US06254718B1

公开(公告)日：2001-07-03

申请号：US09260336

申请日：1999-03-01

申请人： Chikai Tanaka ,  Michihiko Yanagisawa ,  Shinya Iida ,  Yasuhiro Horiike

发明人： Chikai Tanaka ,  Michihiko Yanagisawa ,  Shinya Iida ,  Yasuhiro Horiike

IPC分类号： H05H100

CPC分类号： B24B37/04 ,  H01L21/306

摘要： A wafer flattening process designed to flatten the entire surface of the wafer to a higher precision by projecting the fall in the etching rate at the outer peripheral portion of the wafer and forming the outer peripheral portion of the wafer thinner in advance before plasma etching the entire surface of the wafer, a wafer flattening system, and a wafer flattened by the same. The wafer flattening system is provided with a CMP apparatus 1 and a plasma etching apparatus 2 are provided. The outer peripheral portion Wb of a wafer W held by a carrier 11 is polished thinner than an inside portion Wc of the wafer W by the CMP apparatus 1 having a platen 10 formed with a recessed surface. Specifically, it is polished so that the maximum thickness at the outer peripheral portion Wb of the wafer W becomes not more than the minimum thickness at the inside portion Wc. Suitably thereafter, the plasma etching apparatus 2 locally etches the surface Wa of the wafer W to obtain a wafer W with a high flatness without any projecting portion at the outer peripheral portion Wb.

摘要翻译： 晶片平坦化处理设计成通过在晶片的外周部分投影蚀刻速率下降并预先在等离子体刻蚀整个晶片之前预先形成晶片的外周部分，从而将晶片整个表面平坦化，从而获得更高的精度 晶片表面，晶片平整系统以及由其平坦化的晶片。 晶片压扁系统设置有CMP装置1和等离子体蚀刻装置2。 通过具有形成有凹面的台板10的CMP装置1，由载体11保持的晶片W的外周部Wb比晶片W的内部Wc薄。 具体地说，进行抛光，使晶片W的外周部Wb的最大厚度成为不大于内侧部Wc的最小厚度。 此后，适当地等离子体蚀刻装置2对晶片W的表面Wa进行局部蚀刻，从而在外周部Wb没有任何突出部分获得具有高平坦度的晶片W.

公开(公告)号：US06360687B1

公开(公告)日：2002-03-26

申请号：US09412185

申请日：1999-10-04

申请人： Michihiko Yanagisawa ,  Takeshi Sadohara ,  Chikai Tanaka ,  Shinya Iida ,  Yasuhiro Horiike

发明人： Michihiko Yanagisawa ,  Takeshi Sadohara ,  Chikai Tanaka ,  Shinya Iida ,  Yasuhiro Horiike

IPC分类号： C23C16511

CPC分类号： H01L21/67167 ,  B24B37/345 ,  H01L21/30625 ,  H01L21/67028 ,  H01L21/67219 ,  H01L21/67745

摘要： A wafer flattening system is provided to consecutively and automatically remove the natural oxide film from a wafer and flatten and smooth the wafer so as to improve the surface roughness of the wafer and improve the work efficiency. A step of immersing the wafer in an aqueous solution of hydrofluoric acid of a natural oxide film removing device is performed so as to remove the natural oxide film, then followed by a step of locally etching the surface of the wafer at a local etching apparatus by an activated species gas produced from SF6 gas to flatten the surface. Then, a step of giving a mirror finish to the wafer surface by a CMP apparatus is performed to smooth it. It is also possible to perform the step of removal of the natural oxide film by spraying the entire surface of the wafer by an activated species gas produced from a mixed gas of CF4 gas and H2 gas and possible to perform the step of smoothing by spraying the entire surface of the wafer by an activated species gas produced from a mixed gas of CF4 gas and O2 gas.

摘要翻译： 提供晶片平坦化系统，以从晶片连续自动地除去天然氧化膜，使晶片平坦化和平滑化，从而提高晶片的表面粗糙度，提高工作效率。 进行将晶片浸渍在天然氧化膜除去装置的氢氟酸的水溶液中的步骤，以除去天然氧化物膜，然后在局部蚀刻装置上局部蚀刻晶片的表面， 由SF6气体产生的活化物质气体使表面变平。 然后，通过CMP装置对晶片表面进行镜面整理的步骤进行平滑化。 也可以通过由CF4气体和H2气体的混合气体产生的活化物质气体喷射晶片的整个表面来执行去除天然氧化物膜的步骤，并且可以通过喷涂 通过由CF 4气体和O 2气体的混合气体产生的活化种类气体，晶片的整个表面。

公开(公告)号：US6106728A

公开(公告)日：2000-08-22

申请号：US103653

申请日：1998-06-23

申请人： Shinya Iida ,  Akitoshi Yoshida

发明人： Shinya Iida ,  Akitoshi Yoshida

IPC分类号： B24B37/00 ,  B24B57/02 ,  B24B1/00 ,  H01L21/00

CPC分类号： B24B37/04 ,  B24B57/02

摘要： A slurry recycling system for a CMP apparatus includes a flow path through which a slurry used in the CMP apparatus flows. A first filter is disposed in the flow path for filtering out foreign matter of a particle size of more than 0.5 microns mixed in said slurry. A second filter is preferably disposed in the flow path at a location upstream of and away from the first filter for filtering out foreign matter of a particle size of more than 10 microns mixed in said slurry. Preferably, provisions are made for a concentration adjuster for adjusting the concentration of abrasives in said slurry to substantially an initial value before use, and a pH adjuster for adjusting the pH of said slurry to substantially an initial pH value before use.

摘要翻译： 用于CMP设备的浆料循环系统包括流化路径，CMP设备中使用的浆料通过该流路流动。 第一过滤器设置在流路中，用于过滤在所述浆料中混合的大于0.5微米的粒度的杂质。 优选地，第二过滤器在第一过滤器的上游和远离第一过滤器的位置处设置在流路中，用于过滤在所述浆料中混合的超过10微米的粒度的杂质。 优选地，为浓缩调节剂提供用于将所述浆料中的研磨剂的浓度调节至使用前的初始值，以及用于在使用前将所述浆料的pH调节至基本上初始pH值的pH调节剂。

公开(公告)号：US4745088A

公开(公告)日：1988-05-17

申请号：US830713

申请日：1986-02-19

申请人： Yosuke Inoue ,  Takaya Suzuki ,  Masahiro Okamura ,  Noboru Akiyama ,  Masato Fujita ,  Hiroo Tochikubo ,  Shinya Iida

发明人： Yosuke Inoue ,  Takaya Suzuki ,  Masahiro Okamura ,  Noboru Akiyama ,  Masato Fujita ,  Hiroo Tochikubo ,  Shinya Iida

IPC分类号： H01L21/205 ,  C23C16/458 ,  C23C16/46 ,  H01L21/31 ,  C23C16/00

CPC分类号： C23C16/46 ,  C23C16/4584 ,  Y10S148/057 ,  Y10S148/169 ,  Y10S438/935

摘要： The vapor phase growth on semiconductor wafers is carried out by an apparatus in which a multiplicity of semiconductor wafers are held by a holder so that the semiconductor wafers lie one over another in a vertical direction, and are rotated together with the holder, the holder is placed in a heater disposed in a reaction vessel, a raw material gas supply nozzle and a raw material gas exhaust nozzle are provided within the heater so that the semiconductor wafers are interposed between the gas supply nozzle and the gas discharge nozzle, and the gas supply nozzle and the gas discharge nozzle have gas supply holes and gas discharge holes, respectively, so that a raw material gas can flow on each semiconductor wafer in horizontal directions. When the temperature of the heater is raised by a heating source to heat the semiconductor wafers, the raw material gas is supplied from the gas supply holes to each semiconductor wafer, and thus a uniform layer is grown on each semiconductor wafer from the raw material gas.

摘要翻译： 半导体晶片上的气相生长由多个半导体晶片被保持器保持的装置进行，使得半导体晶片在垂直方向上一个接一个地并且与保持器一起旋转，保持器是 放置在设置在反应容器中的加热器中，原料气体供给喷嘴和原料气体排出喷嘴设置在加热器内，使得半导体晶片插入在气体供给喷嘴和气体排出喷嘴之间，气体供给 喷嘴和气体排出喷嘴分别具有气体供给孔和气体排出孔，使得原料气体可以在水平方向上在每个半导体晶片上流动。 当加热器的温度由加热源升高以加热半导体晶片时，原料气体从气体供给孔供给到每个半导体晶片，因此从原料气体在每个半导体晶片上生长均匀的层 。