公开(公告)号：US20050034745A1

公开(公告)日：2005-02-17

申请号：US10917094

申请日：2004-08-11

申请人： Eric Bergman ,  Brian Aegerter ,  Mark Herron

发明人： Eric Bergman ,  Brian Aegerter ,  Mark Herron

IPC分类号： B08B3/02 ,  B08B3/08 ,  B08B7/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/306 ,  B08B3/00

CPC分类号： H01L23/49582 ,  B08B3/00 ,  B08B3/02 ,  B08B3/044 ,  B08B3/08 ,  B08B7/00 ,  B08B2203/005 ,  B08B2203/007 ,  B08B2230/01 ,  H01L21/02052 ,  H01L21/02054 ,  H01L21/3065 ,  H01L21/6704 ,  H01L21/67051 ,  H01L2924/0002 ,  H05K3/3426 ,  Y02P70/613 ,  H01L2924/00

摘要： In a process for removing an anti-reflective coating, a workpiece such as a semiconductor wafer is placed in a support in a process chamber. A heated liquid including a halogenated additive is applied onto the workpiece, forming a liquid layer on the workpiece. The thickness of the liquid layer is controlled. Ozone is introduced into the process chamber by injection into the liquid or directly into the process chamber. Ozone oxidizes and removes the film on the workpiece. The methods are especially useful for anti-reflective coating or sacrificial light absorbing layers.

摘要翻译： 在去除抗反射涂层的工艺中，将诸如半导体晶片的工件放置在处理室中的支撑体中。 将包含卤化添加剂的加热液施加到工件上，在工件上形成液体层。 控制液体层的厚度。 通过注入液体或直接进入处理室将臭氧引入处理室。 臭氧氧化并去除工件上的膜。 该方法对抗反射涂层或牺牲光吸收层特别有用。