公开(公告)号：US6087248A

公开(公告)日：2000-07-11

申请号：US225878

申请日：1999-01-05

Applicant: Mark Stephen Rodder

Inventor： Mark Stephen Rodder

IPC: H01L21/28 ,  H01L21/3215 ,  H01L21/336 ,  H01L29/49 ,  H01L21/3205

CPC classification number: H01L21/32155 ,  H01L21/28044 ,  H01L29/4925 ,  H01L29/66545

Abstract: A method of forming a transistor is disclosed that comprises the step forming a gate insulator layer 12 on an outer surface of the substrate 10. A first gate conductor layer 22 is formed outwardly from the gate insulator layer 12. The first gate conductor layer 22 is extremely thin. Dopants are introduced into the layer 22 to render it conductive by using a diffusion source layer 24. The diffusion source layer 24 is then removed and replaced by a second gate conductor layer 26 having low resistance. The layer 26 can be used to form a T-gate structure 28, a flush gate 30, or a conventional gate structure.

Abstract translation: 公开了一种形成晶体管的方法，其包括在衬底10的外表面上形成栅极绝缘体层12的步骤。第一栅极导体层22从栅极绝缘体层12向外形成。第一栅极导体层22是 非常薄 通过使用扩散源层24将掺杂剂引入层22以使其导电。然后去除扩散源层24并由具有低电阻的第二栅极导体层26替代。 层26可用于形成T形栅结构28，齐平栅极30或常规栅极结构。

公开(公告)号：US09343303B2

公开(公告)日：2016-05-17

申请号：US14484511

申请日：2014-09-12

Applicant: Wei-E Wang ,  Mark Stephen Rodder

Inventor： Wei-E Wang ,  Mark Stephen Rodder

IPC: H01L21/3063 ,  H01L21/02 ,  H01L21/324 ,  H01L29/165 ,  H01L29/786

CPC classification number: H01L21/0262 ,  H01L21/02373 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/02658 ,  H01L21/3063 ,  H01L21/324 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/786

Abstract: Methods of forming strain-relaxing semiconductor layers are provided in which a porous region is formed in a surface of a semiconductor substrate. A first semiconductor layer that is lattice-matched with the semiconductor substrate is formed on the porous region. A second semiconductor layer is formed on the first semiconductor layer, the second semiconductor layer being a strained layer as formed. The second semiconductor layer is then relaxed.

Abstract translation: 提供形成应变松弛半导体层的方法，其中在半导体衬底的表面中形成多孔区。 在多孔区域上形成与半导体衬底晶格匹配的第一半导体层。 第二半导体层形成在第一半导体层上，第二半导体层是形成的应变层。 然后放松第二半导体层。

公开(公告)号：US20150270120A1

公开(公告)日：2015-09-24

申请号：US14484511

申请日：2014-09-12

Applicant: Wei-E Wang ,  Mark Stephen Rodder

Inventor： Wei-E Wang ,  Mark Stephen Rodder

IPC: H01L21/02 ,  H01L21/324 ,  H01L29/165 ,  H01L21/3063

CPC classification number: H01L21/0262 ,  H01L21/02373 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/02658 ,  H01L21/3063 ,  H01L21/324 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/786

Abstract: Methods of forming strain-relaxing semiconductor layers are provided in which a porous region is formed in a surface of a semiconductor substrate. A first semiconductor layer that is lattice-matched with the semiconductor substrate is formed on the porous region. A second semiconductor layer is formed on the first semiconductor layer, the second semiconductor layer being a strained layer as formed. The second semiconductor layer is then relaxed.

Abstract translation: 提供形成应变松弛半导体层的方法，其中在半导体衬底的表面中形成多孔区。 在多孔区域上形成与半导体衬底晶格匹配的第一半导体层。 第二半导体层形成在第一半导体层上，第二半导体层是形成的应变层。 然后放松第二半导体层。