Low resistance magnetic tunnel junction device with bilayer or multilayer tunnel barrier
    9.
    发明授权
    Low resistance magnetic tunnel junction device with bilayer or multilayer tunnel barrier 有权
    具有双层或多层隧道势垒的低阻磁隧道结装置

    公开(公告)号:US06347049B1

    公开(公告)日:2002-02-12

    申请号:US09916077

    申请日:2001-07-25

    IPC分类号: G11C1115

    摘要: A low resistance magnetic tunnel junction (MTJ) device has a bilayer or multilayer as the insulating tunnel barrier. In one embodiment the tunnel barrier is a bilayer of a first layer of magnesium oxide on the bottom magnetic electrode and an aluminum oxide layer on the magnesium oxide layer. This bilayer is formed by oxidizing a bilayer of Mg/Al. In a second embodiment the tunnel barrier is a bilayer of first layer of aluminum nitride and a second layer of aluminum oxide on top of the aluminum nitride first layer, with this bilayer formed by oxidizing a bilayer of AlN/Al. MTJ devices with trilayer barriers, such as AlN/Al2O3/AlN, MgO/Al2O3/MgO and Al2O3/MgO/Al2O3 are also possible. The resulting magnetic tunnel junction devices have resistance-area values less than 1000 &OHgr;(&mgr;m)2 and preferably in the range of 0.1 to 100 &OHgr;(&mgr;m)2, making the devices suitable for magnetic read sensors.

    摘要翻译: 低电阻磁隧道结(MTJ)装置具有双层或多层作为绝缘隧道势垒。 在一个实施例中,隧道势垒是底部磁极上的第一氧化镁层和氧化镁层上的氧化铝层的双层。 该双层通过氧化Mg / Al的双层而形成。 在第二实施例中,隧道势垒是在氮化铝第一层的顶部上的第一层氮化铝和第二层氧化铝的双层,通过氧化AlN / Al的双层形成该双层。 具有三层屏障的MTJ器件,例如AlN / Al2O3 / AlN,MgO / Al2O3 / MgO和Al2O3 / MgO / Al2O3也是可能的。 所得到的磁性隧道结器件的电阻面积值小于1000欧姆(mum)2,优选在0.1至100欧姆(mum)2的范围内,使得该器件适合于磁读取传感器。