摘要:
A biasing circuit includes an increasing circuit, a supplying circuit, a bias outputting circuit and a bias outputting circuit. The increasing circuit outputs a drive voltage, and the supplying circuit is connected in parallel to the increasing circuit and outputs a drive voltage. The bias outputting circuit outputs a bias output to a biased circuit in response to the drive voltage from the increasing circuit or the drive voltage from the supplying circuit. The control circuit controls the increasing circuit and the supplying circuit based on the bias output from the bias outputting circuit.
摘要:
A biasing circuit includes an increasing circuit, a supplying circuit, a bias outputting circuit and a bias outputting circuit. The increasing circuit outputs a drive voltage, and the supplying circuit is connected in parallel to the increasing circuit and outputs a drive voltage. The bias outputting circuit outputs a bias output to a biased circuit in response to the drive voltage from the increasing circuit or the drive voltage from the supplying circuit. The control circuit controls the increasing circuit and the supplying circuit based on the bias output from the bias outputting circuit.
摘要:
A semiconductor integrated circuit of the invention comprises a plurality of cores, and an interconnecting network including adaptors connected to each of the cores and a plurality of routers connecting the adaptors to communicate therebetween. Transmission side adaptors store first delivery information, and control delivery of the request signal to be received from the first core in accordance with the first delivery information. Reception side adaptors store second delivery information, and control delivery of the request signal to be received through the interconnecting network to the second core in accordance with the second delivery information. The first delivery information and the second delivery information are hierarchically set.
摘要:
The information processing device which recovers a domain developing a fault caused by added application and device driver while maintaining security and reliability includes a plurality of processors, wherein the plurality of processors form a plurality of domains according to processing contents to be executed, and the processors in different domains communicate with each other through a communication unit, and which further includes a recovery unit for executing, for a domain developing a fault, failure recovery processing based on a failure recovery request notified by the domain and a recovery condition set in advance for each domain.
摘要:
A data communications processor which mediates data sending and receiving in an embedded system is provided, wherein it avoids increase of processing due to accretion of number of communication data, disuses any resources for individual management of deadline for each data, and executes deadline management without a starvation. It does not execute receiving process successively for each communication datum; however, it executes receiving process for each assembled data accumulation partial area data as a whole for each prefixed period. In addition, a plurality of data accumulation partial areas in the data accumulating means 220, which is separated for each deadline, are executed batch receiving process respectively at the period according to the relative deadline time.
摘要:
A semiconductor integrated circuit of the invention comprises a plurality of cores, and an interconnecting network including adaptors connected to each of the cores and a plurality of routers connecting the adaptors to communicate therebetween. Transmission side adaptors store first delivery information, and control delivery of the request signal to be received from the first core in accordance with the first delivery information. Reception side adaptors store second delivery information, and control delivery of the request signal to be received through the interconnecting network to the second core in accordance with the second delivery information. The first delivery information and the second delivery information are hierarchically set.
摘要:
A semiconductor integrated circuit of the invention comprises a plurality of cores, and an interconnecting network including adaptors connected to each of the cores and a plurality of routers connecting the adaptors to communicate therebetween. The adaptors keep delivery information indicating a delivery condition of a request signal received from the cores and control delivery of the request signal received from the cores in accordance with the delivery information.
摘要:
A nonvolatile memory device is provided capable of shipping after setting it as a flash memory or as a one-time memory, and which cannot be altered to a flash memory once it has been used as a one-time memory. The nonvolatile memory device of the present invention has a circuit structure such that when a nonvolatile memory receives an instruction of prohibiting erasure of internal data, the instruction is stored by setting a prescribed flag provided in the nonvolatile memory at a predetermined value, and the content of the present nonvolatile memory cannot be erased after packaging, so that it is impossible for a user to alter the values of the flag which indicates whether erasure of data is prohibited or permitted.
摘要:
A non-volatile semiconductor memory device is provided which is capable of shortening time required for determining a reading voltage in its reading circuit and of improving a data reading speed. The non-volatile semiconductor memory device has a feedback-type bias circuit for letting currents to flow, in response to a first timing signal occurring when an address of a memory cell is selected from a load circuit to the memory cell to be connected to a bit line through a bit line decoder according to selection of the address and to be connected through a word line, causing a predetermined bias current to be supplied to the bit line and for letting a current to flow in accordance with an ON-state or OFF-state of the memory cell, causing a reading voltage to be produced at a connection point with the load circuit and a pre-charging circuit for letting currents to flow through the bit line in response to a second timing signal occurring in an early stage when the first timing signal is active and for interrupting currents flowing through the bit line in a last stage when the second timing signal is active.
摘要:
An electrically erasable and programmable non-volatile semiconductor storage device where data is read out by comparing the output of a memory cell and the output of a reference cell by a sense amplifier. In this device, the reference cell is built so that it has a given threshold voltage value, and the gate voltage of the memory cell and the gate voltage of the reference cell are allowed to be set independently.