公开(公告)号：US5641581A

公开(公告)日：1997-06-24

申请号：US411994

申请日：1995-03-28

申请人： Yukio Nishiyama ,  Rempei Nakata ,  Nobuo Hayasaka ,  Haruo Okano ,  Riichirou Aoki ,  Takahito Nagamatsu ,  Akemi Satoh ,  Masao Toyosaki ,  Hitoshi Ito

发明人： Yukio Nishiyama ,  Rempei Nakata ,  Nobuo Hayasaka ,  Haruo Okano ,  Riichirou Aoki ,  Takahito Nagamatsu ,  Akemi Satoh ,  Masao Toyosaki ,  Hitoshi Ito

IPC分类号： C23C16/40 ,  H01L21/31 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  B32B9/00

CPC分类号： H01L21/02274 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31111 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002

摘要： Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:P.gtoreq.5.times.10.sup.-4, P.ltoreq.10.sup.-1.times.10.sup.-E/45( A)and the relationship between the ion energy E (eV) and the plasma density D (/cm.sup.3) satisfies the formula B given below:D.gtoreq.2.times.10.sup.11.times.10.sup.-E/45, 10 .ltoreq.E(B)

摘要翻译： 公开了一种制造半导体器件的方法，其中含有氟的氧化硅膜，所述膜具有低介电常数和低吸湿性并且用作用于电绝缘包括在半导体器件中的布线的绝缘膜，其通过 在气体压力P（Torr）和离子能量E（eV）之间的关系满足下面给出的公式A的条件下，使用至少含有硅，氧和氟的源气体的等离子体CVD方法：P> = 5×10- 4，P <= 10-1×10-E / 45（A），离子能E（eV）与等离子体密度D（/ cm 3）之间的关系满足以下公式B：D> / = 2x1011×10-E / 45,10（E）（B）

公开(公告)号：US5429995A

公开(公告)日：1995-07-04

申请号：US94423

申请日：1993-07-16

申请人： Yukio Nishiyama ,  Rempei Nakata ,  Nobuo Hayasaka ,  Haruo Okano ,  Riichirou Aoki ,  Takahito Nagamatsu ,  Akemi Satoh ,  Masao Toyosaki ,  Hitoshi Ito

发明人： Yukio Nishiyama ,  Rempei Nakata ,  Nobuo Hayasaka ,  Haruo Okano ,  Riichirou Aoki ,  Takahito Nagamatsu ,  Akemi Satoh ,  Masao Toyosaki ,  Hitoshi Ito

IPC分类号： C23C16/40 ,  H01L21/31 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  H01L21/02

CPC分类号： H01L21/02274 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31111 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002

摘要： Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:P.gtoreq.5.times.10.sup.-4,P.ltoreq.10.sup.-1 .times.10.sup.-E/45(A)and the relationship between the ion energy E (ev) and the plasma density D (/cm.sup.3) satisfies the formula B given below:D.gtoreq.2.times.10.sup.11 .times.10.sup.-E/45, 10.ltoreq.E(B)

摘要翻译： 公开了一种制造半导体器件的方法，其中含有氟的氧化硅膜，所述膜具有低介电常数和低吸湿性并且用作用于电绝缘包括在半导体器件中的布线的绝缘膜，其通过 在气体压力P（Torr）和离子能量E（eV）之间的关系满足下面给出的公式A的条件下，使用至少含有硅，氧和氟的源气体的等离子体CVD方法：P> = 5×10- 如图4所示，P / = 2x1011×10-E / 45,10（E）（B）