公开(公告)号：US5641581A

公开(公告)日：1997-06-24

申请号：US411994

申请日：1995-03-28

申请人： Yukio Nishiyama ,  Rempei Nakata ,  Nobuo Hayasaka ,  Haruo Okano ,  Riichirou Aoki ,  Takahito Nagamatsu ,  Akemi Satoh ,  Masao Toyosaki ,  Hitoshi Ito

发明人： Yukio Nishiyama ,  Rempei Nakata ,  Nobuo Hayasaka ,  Haruo Okano ,  Riichirou Aoki ,  Takahito Nagamatsu ,  Akemi Satoh ,  Masao Toyosaki ,  Hitoshi Ito

IPC分类号： C23C16/40 ,  H01L21/31 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  B32B9/00

CPC分类号： H01L21/02274 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31111 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002

摘要： Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:P.gtoreq.5.times.10.sup.-4, P.ltoreq.10.sup.-1.times.10.sup.-E/45( A)and the relationship between the ion energy E (eV) and the plasma density D (/cm.sup.3) satisfies the formula B given below:D.gtoreq.2.times.10.sup.11.times.10.sup.-E/45, 10 .ltoreq.E(B)

摘要翻译： 公开了一种制造半导体器件的方法，其中含有氟的氧化硅膜，所述膜具有低介电常数和低吸湿性并且用作用于电绝缘包括在半导体器件中的布线的绝缘膜，其通过 在气体压力P（Torr）和离子能量E（eV）之间的关系满足下面给出的公式A的条件下，使用至少含有硅，氧和氟的源气体的等离子体CVD方法：P> = 5×10- 4，P <= 10-1×10-E / 45（A），离子能E（eV）与等离子体密度D（/ cm 3）之间的关系满足以下公式B：D> / = 2x1011×10-E / 45,10（E）（B）

公开(公告)号：US5429995A

公开(公告)日：1995-07-04

申请号：US94423

申请日：1993-07-16

申请人： Yukio Nishiyama ,  Rempei Nakata ,  Nobuo Hayasaka ,  Haruo Okano ,  Riichirou Aoki ,  Takahito Nagamatsu ,  Akemi Satoh ,  Masao Toyosaki ,  Hitoshi Ito

发明人： Yukio Nishiyama ,  Rempei Nakata ,  Nobuo Hayasaka ,  Haruo Okano ,  Riichirou Aoki ,  Takahito Nagamatsu ,  Akemi Satoh ,  Masao Toyosaki ,  Hitoshi Ito

IPC分类号： C23C16/40 ,  H01L21/31 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  H01L21/02

CPC分类号： H01L21/02274 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31111 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002

摘要： Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:P.gtoreq.5.times.10.sup.-4,P.ltoreq.10.sup.-1 .times.10.sup.-E/45(A)and the relationship between the ion energy E (ev) and the plasma density D (/cm.sup.3) satisfies the formula B given below:D.gtoreq.2.times.10.sup.11 .times.10.sup.-E/45, 10.ltoreq.E(B)

摘要翻译： 公开了一种制造半导体器件的方法，其中含有氟的氧化硅膜，所述膜具有低介电常数和低吸湿性并且用作用于电绝缘包括在半导体器件中的布线的绝缘膜，其通过 在气体压力P（Torr）和离子能量E（eV）之间的关系满足下面给出的公式A的条件下，使用至少含有硅，氧和氟的源气体的等离子体CVD方法：P> = 5×10- 如图4所示，P / = 2x1011×10-E / 45,10（E）（B）

公开(公告)号：US5597341A

公开(公告)日：1997-01-28

申请号：US451226

申请日：1995-05-26

申请人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

发明人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

IPC分类号： B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/66 ,  H01L21/768 ,  B24B51/00

CPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/1463 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/76819 ,  H01L22/26 ,  H01L2924/0002

摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metal is during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

摘要翻译： 为了平坦化形成在半导体衬底上的绝缘膜，使用含有氧化铈的抛光浆料来抛光绝缘膜的表面。 使用包含二氧化铈的浆料作为抛光剂，在抛光过程中绝缘膜不被碱金属污染。 此外，以增强的抛光速率对绝缘膜进行抛光。

公开(公告)号：US5914275A

公开(公告)日：1999-06-22

申请号：US897324

申请日：1997-07-21

申请人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

发明人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

IPC分类号： B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/66 ,  H01L21/768 ,  H01L21/00

CPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/1463 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/76819 ,  H01L22/26 ,  H01L2924/0002

摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

公开(公告)号：US5445996A

公开(公告)日：1995-08-29

申请号：US66375

申请日：1993-05-25

申请人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

发明人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

IPC分类号： B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/66 ,  H01L21/768 ,  H01L21/302 ,  H01L21/463

CPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/1463 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/76819 ,  H01L22/26 ,  H01L2924/0002

摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

摘要翻译： 为了平坦化形成在半导体衬底上的绝缘膜，使用含有氧化铈的抛光浆料来抛光绝缘膜的表面。 使用包含二氧化铈的浆料作为抛光剂，在抛光过程中绝缘膜不被碱金属污染。 此外，以增强的抛光速率对绝缘膜进行抛光。

公开(公告)号：US5948205A

公开(公告)日：1999-09-07

申请号：US897570

申请日：1997-07-21

申请人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

发明人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

IPC分类号： B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/66 ,  H01L21/768

CPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/1463 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/76819 ,  H01L22/26 ,  H01L2924/0002

摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

摘要翻译： 为了平坦化形成在半导体衬底上的绝缘膜，使用含有氧化铈的抛光浆料来抛光绝缘膜的表面。 使用包含二氧化铈的浆料作为抛光剂，在抛光过程中绝缘膜不被碱金属污染。 此外，以增强的抛光速率对绝缘膜进行抛光。

公开(公告)号：US5571578A

公开(公告)日：1996-11-05

申请号：US372325

申请日：1995-01-13

申请人： Naruhiko Kaji ,  Riichirou Aoki ,  Hiroyuki Toyama ,  Hidemitsu Egawa ,  Takamitsu Yoshida ,  Yukio Nishiyama

发明人： Naruhiko Kaji ,  Riichirou Aoki ,  Hiroyuki Toyama ,  Hidemitsu Egawa ,  Takamitsu Yoshida ,  Yukio Nishiyama

IPC分类号： H01L21/205 ,  C23C16/40 ,  C23C16/509 ,  H01L21/31 ,  H01L21/316 ,  H05H1/24

CPC分类号： H01J37/32165 ,  C23C16/402 ,  C23C16/5096 ,  H01L21/02131 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/31608

摘要： A plasma CVD device having a chamber, an upper electrode provided in the chamber, an under electrode provided in the chamber to be opposite to the upper electrode and to mount a sample thereon, and a plurality of power sources having a different frequency connected to the upper electrode. Gas is introduced into the chamber of the plasma CVD device, the gas contains at least an organic silicon compound, CF.sub.4 and O.sub.2, and has an element ratio (F/Si) of silicon (Si), constituting the organic silicon compound, to fluorine (F), constituting CF.sub.4, to be set to 15 or more. Si(OC.sub.2 H.sub.5).sub.4 or Si(OCH.sub.3).sub.4 is used as an organic silicon compound.

摘要翻译： 一种等离子体CVD装置，其具有室，设置在室中的上电极，设置在室中的与上电极相对的底电极，并在其上安装样品，以及具有不同频率的多个电源连接到 上电极。 将气体引入到等离子体CVD装置的室中，气体至少含有有机硅化合物CF4和O2，并且构成有机硅化合物的硅（Si）的元素比（F / Si）与氟 （F），构成CF4，设定为15以上。 Si（OC2H5）4或Si（OCH3）4用作有机硅化合物。

公开(公告)号：US06547638B2

公开(公告)日：2003-04-15

申请号：US09804232

申请日：2001-03-13

申请人： Katsuya Okumura ,  Riichirou Aoki ,  Hiromi Yajima ,  Seiji Ishikawa ,  Manabu Tsujimura

发明人： Katsuya Okumura ,  Riichirou Aoki ,  Hiromi Yajima ,  Seiji Ishikawa ,  Manabu Tsujimura

IPC分类号： B24B5100

CPC分类号： H01L21/67161 ,  B08B1/04 ,  B24B27/0023 ,  B24B37/04 ,  B24B37/345 ,  B24B51/00 ,  B24B55/12 ,  F24F3/161 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/67057 ,  H01L21/67167 ,  H01L21/67219 ,  H01L21/67745 ,  H01L21/67778 ,  H03M13/39 ,  H04N5/4401 ,  H04N5/455

摘要： A polishing apparatus includes an arrangement of a plurality of units to deal with various operations and a robot having at least one arm. The plurality of units are disposed around the robot and include a loading unit for receiving thereon a, e.g. dry, workpiece to be polished, a polishing system including at least one polishing unit for polishing the workpiece, a washing system and a drying system at least including one washing unit for washing and drying the polished workpiece, and an unloading unit for receiving thereon a resultant clean and dry polished workpiece.

公开(公告)号：US5885138A

公开(公告)日：1999-03-23

申请号：US767060

申请日：1996-12-16

申请人： Katsuya Okumura ,  Riichirou Aoki ,  Hiromi Yajima ,  Seiji Ishikawa ,  Manabu Tsujimura

发明人： Katsuya Okumura ,  Riichirou Aoki ,  Hiromi Yajima ,  Seiji Ishikawa ,  Manabu Tsujimura

IPC分类号： B08B1/04 ,  B24B27/00 ,  B24B37/04 ,  B24B51/00 ,  B24B55/12 ,  F24F3/16 ,  H01L21/00 ,  H01L21/677 ,  H03M13/39 ,  H04L1/00 ,  H04N5/44 ,  H04N5/455 ,  B24B5/00 ,  B24B7/00 ,  B24B9/00 ,  B24B29/00

CPC分类号： H01L21/67161 ,  B08B1/04 ,  B24B27/0023 ,  B24B37/04 ,  B24B37/345 ,  B24B51/00 ,  B24B55/12 ,  F24F3/161 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/67057 ,  H01L21/67167 ,  H01L21/67219 ,  H01L21/67745 ,  H01L21/67778 ,  H03M13/39 ,  H04N5/455 ,  H04N5/4401

摘要： A polishing apparatus includes an arrangement of a plurality of units to deal with various operations and a robot having at least one arm. The plurality of units are disposed around the robot and include a loading unit for receiving thereon a, e.g. dry, workpiece to be polished, a polishing system including at least one polishing unit for polishing the workpiece, a washing system and a drying system at least one washing unit for washing and drying the polished workpiece, and an unloading unit for receiving thereon a resultant clean and dry polished workpiece.

公开(公告)号：US5695601A

公开(公告)日：1997-12-09

申请号：US578894

申请日：1995-12-27

申请人： Masako Kodera ,  Atsushi Shigeta ,  Shiro Mishima ,  Hiromi Yajima ,  Riichirou Aoki

发明人： Masako Kodera ,  Atsushi Shigeta ,  Shiro Mishima ,  Hiromi Yajima ,  Riichirou Aoki

IPC分类号： B24B37/04 ,  B24B49/12 ,  H01L21/66 ,  H01L21/306

CPC分类号： B24B37/005 ,  B24B37/042 ,  B24B49/12 ,  H01L22/20

摘要： A film formed on a wafer is polished in a CMP unit. Thereafter, the wafer, which is adhered to a wafer holder, is moved to a portion above an optical sensor. A surface of the wafer is radiated with, for example, a visible ray, thereby measuring a thickness of the film which has been polished. A control unit automatically sets a polishing time for polishing a film on a wafer to be polished next.

摘要翻译： 在CMP单元上抛光形成在晶片上的膜。 此后，粘附到晶片保持器上的晶片移动到光学传感器上方的部分。 用例如可见光辐射晶片的表面，从而测量已经被抛光的膜的厚度。 控制单元自动设置抛光时间，用于在随后抛光的晶片上抛光膜。