公开(公告)号：US4904902A

公开(公告)日：1990-02-27

申请号：US181765

申请日：1988-04-14

申请人： Tadamoto Tamai ,  Masateru Sato

发明人： Tadamoto Tamai ,  Masateru Sato

IPC分类号： C23C14/54 ,  C23C14/48 ,  G01R29/24 ,  H01J37/02 ,  H01J37/317 ,  H01L21/265 ,  H01L21/66

CPC分类号： H01J37/026 ,  H01J37/3171

摘要： In an ion implanting apparatus, a first conductor member for monitoring the charge-up of the workpiece is positioned on the front face of a wafer disk, a second conductor member electrically connected with the first conductor member for distributing the charge on the first conductor member is positioned on the rear face of the wafer disk, and a third conductor capable of forming capacitive coupling with the second conductor member is fixed to a disk chamber. When the first conductor member is charged, the charge is distributed also to the second conductor member. When the second conductor member passes by the third conductor member by the rotation of the disk, charge is induced on the third conductor member depending on the charged state of the second conductor member. The first, the second and the third conductor members can be effectively shielded from the surroundings. Charge detection with a high S/N ratio is made possible.

摘要翻译： 在离子注入装置中，用于监视工件的充电的第一导体构件位于晶片盘的正面上，第二导体构件与第一导体构件电连接，用于将电荷分配在第一导体构件 位于晶片盘的背面，并且能够与第二导体构件形成电容耦合的第三导体被固定到盘室。 当第一导体构件被充电时，电荷也分配给第二导体构件。 当第二导体构件通过盘的旋转通过第三导体构件时，根据第二导体构件的充电状态，在第三导体构件上感应电荷。 第一，第二和第三导体构件可以被有效地屏蔽环境。 具有高S / N比的充电检测成为可能。

公开(公告)号：US20050016838A1

公开(公告)日：2005-01-27

申请号：US10861758

申请日：2004-06-04

申请人： Hirohiko Murata ,  Masateru Sato

发明人： Hirohiko Murata ,  Masateru Sato

IPC分类号： H01J27/02 ,  C23C14/00 ,  C23C14/32 ,  H01J27/16 ,  H01J37/08 ,  H01J37/317

CPC分类号： H01J27/16 ,  H01J37/08 ,  H01J2209/017 ,  H01J2237/022

摘要： An ion source apparatus includes a rare gas supply source supplying rare gas instead of ion source gas to a plasma chamber, means to determine time and timing for cleaning electrodes in consideration of a collecting amount of insulation layers accreting to the electrodes of an extraction electrode system. Based on the above, the ion source apparatus removes the insulation layers by sputtering with ion beam of the rare gas while adjusting extraction or accelerate voltage and supply amount of the rare gas as a setting parameter. Moreover, by adjusting the setting parameter which changes a diameter of ion beam based on the rare gas when the ion beam collides onto each electrode surface of the extraction electrode system, the beam diameter is focused within an effective range in which intension of the sputtering of the insulation layers is maximized thus evenly removing the insulation layers.

摘要翻译： 离子源装置包括：将等离子体气体供给稀有气体而不是离子源气体的稀有气体供给源，考虑到提取电极系统的电极的绝缘层的收集量，确定清洗电极的时间和时间的装置 。 基于上述，离子源装置通过溅射稀土气体的离子束，同时调整提取或加速稀有气体的电压和供给量作为设定参数，来除去绝缘层。 此外，通过调整当离子束碰撞到提取电极系统的每个电极表面时基于稀有气体改变离子束直径的设定参数，光束直径聚焦在有效范围内，其中溅射的强度 绝缘层最大化，从而均匀地去除绝缘层。

公开(公告)号：US07947129B2

公开(公告)日：2011-05-24

申请号：US10861758

申请日：2004-06-04

申请人： Hirohiko Murata ,  Masateru Sato

发明人： Hirohiko Murata ,  Masateru Sato

IPC分类号： C25F3/00

CPC分类号： H01J27/16 ,  H01J37/08 ,  H01J2209/017 ,  H01J2237/022

摘要： An ion source apparatus includes a rare gas supply source supplying rare gas instead of ion source gas to a plasma chamber, means to determine time and timing for cleaning electrodes in consideration of a collecting amount of insulation layers accreting to the electrodes of an extraction electrode system. Based on the above, the ion source apparatus removes the insulation layers by sputtering with ion beam of the rare gas while adjusting extraction or accelerate voltage and supply amount of the rare gas as a setting parameter. Moreover, by adjusting the setting parameter which changes a diameter of ion beam based on the rare gas when the ion beam collides onto each electrode surface of the extraction electrode system, the beam diameter is focused within an effective range in which intension of the sputtering of the insulation layers is maximized thus evenly removing the insulation layers.

摘要翻译： 离子源装置包括：将等离子体气体供给稀有气体而不是离子源气体的稀有气体供给源，考虑到提取电极系统的电极的绝缘层的收集量，确定清洗电极的时间和时间的装置 。 基于上述，离子源装置通过溅射稀土气体的离子束，同时调整提取或加速稀有气体的电压和供给量作为设定参数，来除去绝缘层。 此外，通过调整当离子束碰撞到提取电极系统的每个电极表面时基于稀有气体改变离子束直径的设定参数，光束直径聚焦在有效范围内，其中溅射的强度 绝缘层最大化，从而均匀地去除绝缘层。

公开(公告)号：US4914292A

公开(公告)日：1990-04-03

申请号：US206055

申请日：1988-06-13

申请人： Tadamoto Tamai ,  Masateru Sato

发明人： Tadamoto Tamai ,  Masateru Sato

IPC分类号： H01J37/02 ,  H01J37/317 ,  H01L21/265 ,  H01L21/67

CPC分类号： H01J37/3171 ,  H01J37/026

摘要： In an ion implanting apparatus equipped with an electron shower for neutralizing the positive charge-up by the ion implantation with electrons, an electrically conductive tube is disposed just before the workpiece to be ion-implanted to pass through an ion beam which has a diameter nearly equal to the inner hollow channel of the tube section to absorb those electrons which do not overlap the positive ion beam, and a flange section extends substantially parallel to the surface of the workpiece to absorb the secondary electrons emitted from the ion implant portion thereby suppressing the negative change-up around the ion implanted portion.

摘要翻译： 在配备有用于通过电子离子注入中和正电荷的电子喷淋器的离子注入装置中，将导电管设置在待离子注入的工件之前，以通过直径近似的离子束 等于管部分的内部中空通道以吸收不与正离子束重叠的电子，并且凸缘部分基本上平行于工件的表面延伸，以吸收从离子注入部分发射的二次电子，从而抑制 离子注入部分周围的负变化。

公开(公告)号：US6060718A

公开(公告)日：2000-05-09

申请号：US31423

申请日：1998-02-26

申请人： Adam A. Brailove ,  Masateru Sato

发明人： Adam A. Brailove ,  Masateru Sato

IPC分类号： H01J27/08 ,  H01J27/16 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265 ,  H01J27/00

CPC分类号： H01J27/16 ,  H01J2237/31701

摘要： An attenuator (90) for an ion source (26) is provided. The ion source comprises a plasma chamber (76) in which a gas is ionized by an exciter (78) to create a plasma which is extractable through at least one aperture (64) in an apertured portion (50) of the chamber to form an ion beam. The attenuator (90) comprises a member (90) positioned within the chamber (76) intermediate the exciter (78) and the at least one aperture (64), the member providing at least one first opening (97) corresponding the at least one aperture (64), and being moveable between first and second positions with respect to the at least one aperture. In one embodiment, in the first position, the member is positioned adjacent the aperture (64) to obstruct at least a portion of the aperture, and in the second position the member is positioned away from the aperture (64) so as not to obstruct the aperture. In a second embodiment, the aperture (64) resides in an aperture plate (50) and (i) the member and the aperture plate form a generally closed region (102) between the aperture plate and the chamber (76) when the member is in the first position, and (ii) the aperture (64) is in direct communication with the chamber (76) when the member is in the second position. In this second embodiment, plasma within the chamber (76) diffuses through the region (102) before being extracted through the aperture in the first position, and plasma within the chamber is extracted directly through the aperture in the second position.

摘要翻译： 提供了一种用于离子源（26）的衰减器（90）。 离子源包括等离子体室（76），其中气体被激发器（78）电离以产生等离子体，该等离子体可以通过腔室的有孔部分（50）中的至少一个孔（64）可提取，以形成 离子束。 衰减器（90）包括位于激励器（78）和至少一个孔（64）之间的腔室（76）内的构件（90），该构件提供至少一个对应于至少一个的第一开口（97） 孔（64），并且可相对于所述至少一个孔在第一和第二位置之间移动。 在一个实施例中，在第一位置，构件定位成邻近孔（64）以阻挡孔的至少一部分，并且在第二位置，构件远离孔（64）定位成不会阻塞 光圈。 在第二实施例中，孔（64）位于孔板（50）中，并且（i）构件和孔板在孔板和腔室（76）之间形成大致闭合的区域（102），当构件为 在第一位置处，和（ii）当构件处于第二位置时，孔（64）与腔室（76）直接连通。 在该第二实施例中，室（76）内的等离子体在通过第一位置的孔被抽出之前扩散通过区域（102），腔室内的等离子体直接通过第二位置的孔被提取。

公开(公告)号：US5657531A

公开(公告)日：1997-08-19

申请号：US508113

申请日：1995-07-27

申请人： Masateru Sato ,  Yasuo Warita ,  Seiichi Sugano ,  Toshiji Fujimori

发明人： Masateru Sato ,  Yasuo Warita ,  Seiichi Sugano ,  Toshiji Fujimori

IPC分类号： G11B21/21 ,  B21D39/03 ,  G11B5/55 ,  G11B21/16 ,  G11B5/127

CPC分类号： G11B5/5521 ,  Y10T29/49027 ,  Y10T29/49938 ,  Y10T29/53165 ,  Y10T29/53265

摘要： A mounting portion (protruding portion provided with a through hole) of a magnetic head assembly is fitted into an insertion hole formed at the forward end of a carriage arm, and a thus-produced inlay portion is disposed between adjacent first members having a V-shaped slit. A second member is pushed into the V-shaped slit of each first member and the magnetic head assembly is pressed against the carriage arm by the expanding force of the slit portions of each first member which is produced in proportion to the amount of insertion of the second member, and the magnetic head assembly is held in a fixed state. In this state, a caulking ball is press-fitted into the through hole of the protruding portion with a caulking pin so as to caulk the inlay portion. The magnetic head assembly is pressed against the carriage arm perpendicularly thereto.

摘要翻译： 磁头组件的安装部分（设置有通孔的突出部分）装配到形成在滑架臂的前端的插入孔中，并且由此产生的嵌体部分设置在相邻的第一构件之间， 形狭缝。 将第二构件推入到每个第一构件的V形狭缝中，并且磁头组件通过与第一构件的插入量成比例地产生的每个第一构件的狭缝部分的膨胀力而压靠在支架臂上 第二构件，并且磁头组件保持在固定状态。 在这种状态下，用铆接销将填缝球压入突出部分的通孔中以便填充嵌入部分。 磁头组件与托架臂垂直地压靠在其上。

公开(公告)号：US07012263B2

公开(公告)日：2006-03-14

申请号：US10866511

申请日：2004-06-11

申请人： Hirohiko Murata ,  Masateru Sato

发明人： Hirohiko Murata ,  Masateru Sato

IPC分类号： H01J27/00

CPC分类号： H01J27/08 ,  H01J37/08 ,  H01J2237/31701

摘要： The ion source apparatus of the present invention includes at least one pair of antenna-opposed magnets sandwiching an antenna element and moveable to magnetic element and the antenna element both in horizontal and vertical directions in a plasma chamber, and a control means performing a positional adjustment over the antenna-opposed magnets to the antenna element in the plasma chamber. An electrons-generated region of high-concentration is formed around the antenna element through electric fields based on outputs of the antenna element and magnetic fields of the antenna-opposed magnets crossing the antenna element.

摘要翻译： 本发明的离子源装置包括在等离子体室中夹持天线元件并且能够在水平和垂直方向上移动到磁性元件和天线元件的至少一对天线相对的磁体，以及执行位置调整的控制装置 在与等离子体室中的天线元件的天线相对的磁体上。 基于天线元件的输出和穿过天线元件的天线相对的磁体的磁场，通过电场在天线元件周围形成高浓度的电子产生区域。