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公开(公告)号：US20100020612A1
公开(公告)日：2010-01-28
申请号：US12571800
申请日：2009-10-01
申请人： Katsuaki Isobe , Masatsugu Kojima
发明人： Katsuaki Isobe , Masatsugu Kojima
CPC分类号： G11C16/30 , G11C16/225
摘要： When a voltage level detector detects that a supply voltage reaches a recovery voltage level that requires a recovery operation, a signal generator generates a recovery operation instructing signal for instructing the recovery operation. The recovery operation instructing signal is invalidated if a certain operation mode is executed and validated in other cases.
摘要翻译： 当电压电平检测器检测到电源电压达到需要恢复操作的恢复电压电平时，信号发生器产生用于指示恢复操作的恢复操作指令信号。 如果某些操作模式在其他情况下被执行和验证，则恢复操作指令信号无效。
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公开(公告)号：US20070236997A1
公开(公告)日：2007-10-11
申请号：US11763489
申请日：2007-06-15
申请人： Katsuaki ISOBE , Masatsugu Kojima
发明人： Katsuaki ISOBE , Masatsugu Kojima
IPC分类号： G11C16/20
CPC分类号： G11C16/30 , G11C16/225
摘要： When a voltage level detector detects that a supply voltage reaches a recovery voltage level that requires a recovery operation, a signal generator generates a recovery operation instructing signal for instructing the recovery operation. The recovery operation instructing signal is invalidated if a certain operation mode is executed and validated in other cases.
摘要翻译： 当电压电平检测器检测到电源电压达到需要恢复操作的恢复电压电平时，信号发生器产生用于指示恢复操作的恢复操作指令信号。 如果某些操作模式在其他情况下被执行和验证，则恢复操作指令信号无效。
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3.发明申请公开(公告)号：US20050047216A1
公开(公告)日：2005-03-03
申请号：US10713196
申请日：2003-11-17
申请人： Masatsugu Kojima
发明人： Masatsugu Kojima
CPC分类号： G11C16/3427 , G11C16/0483 , G11C16/16 , G11C16/349 , G11C16/3495
摘要： A non-volatile semiconductor memory device includes: a cell array having electrically rewritable and non-volatile memory cells arranged to constitute at least one block with a plurality of pages; and a controller for controlling data erase by a page or sub-block with plural and continuous pages in the block, wherein the cell array has an erase control area set therein in which the number of data erase is stored as being expressed by a series of two-value data, the number of “0” data at lower bit side thereof indicating an accumulated value of the number of data erase in a block, and wherein the number of data erase is read out before data erase for a selected page in the block by a check-read operation in which plural pages are simultaneously set at a selected state, and renewed and written into the selected page after data erase.
摘要翻译： 非易失性半导体存储器件包括：具有电可重写和非易失性存储单元的单元阵列，其被布置成构成具有多页的至少一个块; 以及控制器，用于通过具有所述块中的多个和连续页面的页面或子块来控制数据擦除，其中，所述单元阵列具有其中设置的擦除控制区域，其中存储数据擦除的数量，由一系列 两值数据，其低位侧的“0”数据的数量表示块中的数据擦除次数的累积值，并且其中在数据擦除之前，在数据擦除之前读出数据擦除数 通过检查读取操作阻止多页同时设置在选择状态，并且在数据擦除之后更新并写入所选择的页面。
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公开(公告)号：US06650578B2
公开(公告)日：2003-11-18
申请号：US10229147
申请日：2002-08-28
IPC分类号： G11C700
CPC分类号： G11C29/785 , G11C29/808
摘要： A semiconductor storage device includes a main memory cell array and a redundancy memory cell array. The redundancy memory cell array is set to selectively have a replacing area replacing a defective memory cell in the main memory cell array, and a non-replacing area other than the replacing area. Memory cells in the main memory cell array and the redundancy memory cell array are selected and driven by a memory selection circuit. A control section for controlling the memory selection circuit is set to assign main memory addresses to memory cells in the non-replacing area, and use these memory cells as an expansion area of the main memory cell array.
摘要翻译： 半导体存储装置包括主存储单元阵列和冗余存储单元阵列。 冗余存储单元阵列被设置为选择性地具有替换主存储单元阵列中的有缺陷存储单元的替换区域和替换区域以外的非替换区域。 主存储单元阵列和冗余存储单元阵列中的存储单元由存储器选择电路选择和驱动。 设置用于控制存储器选择电路的控制部分，以将主存储器地址分配给非替代区域中的存储单元，并将这些存储单元用作主存储单元阵列的扩展区域。
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5.发明授权公开(公告)号：US07315915B2
公开(公告)日：2008-01-01
申请号：US10950416
申请日：2004-09-28
IPC分类号： G06F12/00
CPC分类号： G11C16/16
摘要： A non-volatile semiconductor memory device includes: a cell array having electrically rewritable and non-volatile memory cells arranged therein, the cell array being divided into a plurality of blocks, each the block being divided into a plurality of sub-blocks each having one or plural and continuous pages; and a controller for controlling data erasure of the cell array in a way that each the sub-block serves as a unit of data erasure, wherein each the sub-block in the cell array stores the number of data erasure which is renewed by each data erasure, and the number of data erasure is limited for each the sub-block to a permissible maximum value stored in a certain block in the cell array.
摘要翻译： 非挥发性半导体存储器件包括：具有布置在其中的电可重写和非易失性存储器单元的单元阵列，所述单元阵列被划分为多个块，每个块被分成多个子块，每个子块具有一个 或多个和连续的页面; 以及用于以每个子块用作数据擦除单位的方式控制单元阵列的数据擦除的控制器，其中单元阵列中的每个子块存储由每个数据更新的数据擦除次数 并且将每个子块的数据擦除的数量限制为存储在单元阵列中的某个块中的允许的最大值。
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公开(公告)号：US20060050564A1
公开(公告)日：2006-03-09
申请号：US11219756
申请日：2005-09-07
申请人： Masatsugu Kojima , Koji Hosono , Koichi Kawai
发明人： Masatsugu Kojima , Koji Hosono , Koichi Kawai
IPC分类号： G11C11/34
CPC分类号： G11C16/0483 , G11C16/3454 , G11C16/3459
摘要： A non-volatile semiconductor memory device includes: a memory cell array, in which electrically rewritable and non-volatile memory cells are arranged: a sense amplifier circuit configured to read data of the memory cell array; and a pass/fail detection circuit configured to detect write or erase completion based on verify-read data stored in the sense amplifier circuit in data write or erase mode, wherein the pass/fall detection circuit comprises a data latch, into which a defective column isolation data is writable in accordance with a command input.
摘要翻译： 非挥发性半导体存储器件包括：存储单元阵列，其中布置有电可重写和非易失性存储单元;读出放大器电路，被配置为读取存储单元阵列的数据; 以及通过/失败检测电路，被配置为基于在数据写入或擦除模式中存储在读出放大器电路中的验证读取数据来检测写入或擦除完成，其中，通过/下降检测电路包括数据锁存器，缺陷列 隔离数据可根据命令输入进行写入。
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公开(公告)号：US20060034120A1
公开(公告)日：2006-02-16
申请号：US11193442
申请日：2005-08-01
申请人： Katsuaki Isobe , Masatsugu Kojima
发明人： Katsuaki Isobe , Masatsugu Kojima
IPC分类号： G11C16/04
CPC分类号： G11C16/30 , G11C16/225
摘要： When a voltage level detector detects that a supply voltage reaches a recovery voltage level that requires a recovery operation, a signal generator generates a recovery operation instructing signal for instructing the recovery operation. The recovery operation instructing signal is invalidated if a certain operation mode is executed and validated in other cases.
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8.发明申请公开(公告)号：US20050111259A1
公开(公告)日：2005-05-26
申请号：US10950416
申请日：2004-09-28
IPC分类号： G11C16/02 , G11C16/00 , G11C16/04 , G11C16/06 , G11C16/10 , G11C16/14 , G11C16/16 , G11C7/00 , G11C11/34
CPC分类号： G11C16/16
摘要： A non-volatile semiconductor memory device includes: a cell array having electrically rewritable and non-volatile memory cells arranged therein, the cell array being divided into a plurality of blocks, each the block being divided into a plurality of sub-blocks each having one or plural and continuous pages; and a controller for controlling data erasure of the cell array in a way that each the sub-block serves as a unit of data erasure, wherein each the sub-block in the cell array stores the number of data erasure which is renewed by each data erasure, and the number of data erasure is limited for each the sub-block to a permissible maximum value stored in a certain block in the cell array.
摘要翻译： 非挥发性半导体存储器件包括：具有布置在其中的电可重写和非易失性存储器单元的单元阵列，所述单元阵列被划分为多个块，每个块被分成多个子块，每个子块具有一个 或多个和连续的页面; 以及用于以每个子块用作数据擦除单位的方式控制单元阵列的数据擦除的控制器，其中单元阵列中的每个子块存储由每个数据更新的数据擦除次数 并且将每个子块的数据擦除的数量限制为存储在单元阵列中的某个块中的允许的最大值。
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公开(公告)号：US20120002478A1
公开(公告)日：2012-01-05
申请号：US13236300
申请日：2011-09-19
申请人： Katsuaki Isobe , Masatsugu Kojima
发明人： Katsuaki Isobe , Masatsugu Kojima
CPC分类号： G11C16/30 , G11C16/225
摘要： When a voltage level detector detects that a supply voltage reaches a recovery voltage level that requires a recovery operation, a signal generator generates a recovery operation instructing signal for instructing the recovery operation. The recovery operation instructing signal is invalidated if a certain operation mode is executed and validated in other cases.
摘要翻译： 当电压电平检测器检测到电源电压达到需要恢复操作的恢复电压电平时，信号发生器产生用于指示恢复操作的恢复操作指令信号。 如果某些操作模式在其他情况下被执行和验证，则恢复操作指令信号无效。
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公开(公告)号：US07248502B2
公开(公告)日：2007-07-24
申请号：US11193442
申请日：2005-08-01
申请人： Katsuaki Isobe , Masatsugu Kojima
发明人： Katsuaki Isobe , Masatsugu Kojima
IPC分类号： G11C11/34
CPC分类号： G11C16/30 , G11C16/225
摘要： When a voltage level detector detects that a supply voltage reaches a recovery voltage level that requires a recovery operation, a signal generator generates a recovery operation instructing signal for instructing the recovery operation. The recovery operation instructing signal is invalidated if a certain operation mode is executed and validated in other cases.
摘要翻译： 当电压电平检测器检测到电源电压达到需要恢复操作的恢复电压电平时，信号发生器产生用于指示恢复操作的恢复操作指令信号。 如果某些操作模式在其他情况下被执行和验证，则恢复操作指令信号无效。
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