Double patterning techniques and structures
    1.
    发明授权
    Double patterning techniques and structures 有权
    双重图案化技术和结构

    公开(公告)号:US07915171B2

    公开(公告)日:2011-03-29

    申请号:US12111702

    申请日:2008-04-29

    CPC classification number: H01L21/308 H01L21/0271 H01L21/3086 H01L21/3088

    Abstract: Double patterning techniques and structures are generally described. In one example, a method includes depositing a first photoresist to a semiconductor substrate, forming a first integrated circuit (IC) pattern in the first photoresist, the first IC pattern comprising one or more trench structures, protecting the first IC pattern in the first photoresist from actions that form a second IC pattern in a second photoresist, depositing the second photoresist to the first IC pattern, and forming the second IC pattern in the second photoresist, the second IC pattern comprising one or more structures that are sufficiently close to the one or more trench structures of the first IC pattern to cause scumming of the second photoresist in the one or more trench structures of the first IC pattern.

    Abstract translation: 通常描述双重图案形成技术和结构。 在一个实例中,一种方法包括将第一光致抗蚀剂沉积到半导体衬底,在第一光致抗蚀剂中形成第一集成电路(IC)图案,第一IC图案包括一个或多个沟槽结构,保护第一光致抗蚀剂 从在第二光致抗蚀剂中形成第二IC图案的动作,将第二光致抗蚀剂沉积到第一IC图案,以及在第二光致抗蚀剂中形成第二IC图案,第二IC图案包括一个或多个足够接近该一个的结构 或更多个沟槽结构,以使第一IC图案的一个或多个沟槽结构中的第二光致抗蚀剂浮渣。

    DOUBLE PATTERNING TECHNIQUES AND STRUCTURES
    4.
    发明申请
    DOUBLE PATTERNING TECHNIQUES AND STRUCTURES 有权
    双重图案技术和结构

    公开(公告)号:US20090267175A1

    公开(公告)日:2009-10-29

    申请号:US12111702

    申请日:2008-04-29

    CPC classification number: H01L21/308 H01L21/0271 H01L21/3086 H01L21/3088

    Abstract: Double patterning techniques and structures are generally described. In one example, a method includes depositing a first photoresist to a semiconductor substrate, forming a first integrated circuit (IC) pattern in the first photoresist, the first IC pattern comprising one or more trench structures, protecting the first IC pattern in the first photoresist from actions that form a second IC pattern in a second photoresist, depositing the second photoresist to the first IC pattern, and forming the second IC pattern in the second photoresist, the second IC pattern comprising one or more structures that are sufficiently close to the one or more trench structures of the first IC pattern to cause scumming of the second photoresist in the one or more trench structures of the first IC pattern.

    Abstract translation: 通常描述双重图案形成技术和结构。 在一个实例中,一种方法包括将第一光致抗蚀剂沉积到半导体衬底,在第一光致抗蚀剂中形成第一集成电路(IC)图案,第一IC图案包括一个或多个沟槽结构,保护第一光致抗蚀剂中的第一IC图案 从在第二光致抗蚀剂中形成第二IC图案的动作,将第二光致抗蚀剂沉积到第一IC图案,以及在第二光致抗蚀剂中形成第二IC图案,第二IC图案包括一个或多个足够接近该一个的结构 或更多个沟槽结构,以使第一IC图案的一个或多个沟槽结构中的第二光致抗蚀剂浮渣。

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