公开(公告)号：US20110108932A1

公开(公告)日：2011-05-12

申请号：US11793853

申请日：2005-11-04

Applicant: Hubert Benzel ,  Stefan Finkbeiner ,  Frank Fischer ,  Helmut Baumann ,  Lars Metzger ,  Roland Scheuerer ,  Peter Brauchle ,  Andreas Feustel ,  Matthias Neubauer

Inventor： Hubert Benzel ,  Stefan Finkbeiner ,  Frank Fischer ,  Helmut Baumann ,  Lars Metzger ,  Roland Scheuerer ,  Peter Brauchle ,  Andreas Feustel ,  Matthias Neubauer

IPC: H01L29/84 ,  H01L21/02

CPC classification number: G01L9/0073

Abstract: A manufacturing method for producing a micromechanical sensor element which may be produced in a monolithically integrable design and has capacitive detection of a physical quantity is described. In addition to the manufacturing method, a micromechanical device containing such. a sensor element, e.g., a pressure sensor or an acceleration sensor, is described.

Abstract translation: 描述了可以以单片可集成设计制造并具有物理量的电容检测的微机械传感器元件的制造方法。 除了制造方法之外，还含有这样的微机械装置。 描述了传感器元件，例如压力传感器或加速度传感器。

公开(公告)号：US09159619B2

公开(公告)日：2015-10-13

申请号：US14065695

申请日：2013-10-29

Applicant: Jochen Reinmuth ,  Matthias Neubauer ,  Martin Lindemann ,  Eduard Rije ,  Michael Baumann

Inventor： Jochen Reinmuth ,  Matthias Neubauer ,  Martin Lindemann ,  Eduard Rije ,  Michael Baumann

IPC: H01L21/00 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  B81C1/00

CPC classification number: H01L21/76898 ,  B81C1/00095 ,  H01L21/7682 ,  H01L23/481 ,  H01L2224/13 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A method for producing an electrical feedthrough in a substrate having an electrical feedthrough, including: forming an etch stop layer on the front side of the substrate; forming a mask on the back side of the substrate; forming an annular trench in the substrate, which trench extends from the back to the front side, by an etching process that stops at the etch stop layer, using the mask, the trench surrounding a substrate punch; depositing a metal layer over the back side of the substrate using the mask, the metal layer penetrating into the annular trench and being deposited on the substrate punch; forming a metal silicide layer on the substrate punch by at least partially converting the metal layer into the metal silicide layer on the substrate punch; selectively removing a remainder of the metal layer; and closing off the annular trench at the back side of the substrate.

Abstract translation: 一种用于在具有电馈通的基板中制造电馈通的方法，包括：在所述基板的正面上形成蚀刻停止层; 在基板的背面形成掩模; 在所述衬底中形成环形沟槽，所述沟槽通过使用所述掩模在所述蚀刻停止层处停止所述沟槽围绕衬底冲头的所述沟槽从所述背面延伸到所述前侧; 使用掩模在衬底的背面上沉积金属层，金属层穿透环形沟槽并沉积在衬底冲头上; 通过至少部分地将所述金属层转化为所述基板冲头上的金属硅化物层而在所述基板冲头上形成金属硅化物层; 选择性地除去金属层的剩余部分; 并且关闭衬底背面的环形沟槽。

公开(公告)号：US20140131888A1

公开(公告)日：2014-05-15

申请号：US14065695

申请日：2013-10-29

Applicant: Jochen REINMUTH ,  Matthias Neubauer ,  Martin Lindemann ,  Eduard Rije ,  Michael Baumann

Inventor： Jochen REINMUTH ,  Matthias Neubauer ,  Martin Lindemann ,  Eduard Rije ,  Michael Baumann

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76898 ,  B81C1/00095 ,  H01L21/7682 ,  H01L23/481 ,  H01L2224/13 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A method for producing an electrical feedthrough in a substrate having an electrical feedthrough, including: forming an etch stop layer on the front side of the substrate; forming a mask on the back side of the substrate; forming an annular trench in the substrate, which trench extends from the back to the front side, by an etching process that stops at the etch stop layer, using the mask, the trench surrounding a substrate punch; depositing a metal layer over the back side of the substrate using the mask, the metal layer penetrating into the annular trench and being deposited on the substrate punch; forming a metal silicide layer on the substrate punch by at least partially converting the metal layer into the metal silicide layer on the substrate punch; selectively removing a remainder of the metal layer; and closing off the annular trench at the back side of the substrate.

Abstract translation: 一种用于在具有电馈通的基板中制造电馈通的方法，包括：在所述基板的正面上形成蚀刻停止层; 在基板的背面形成掩模; 在所述衬底中形成环形沟槽，所述沟槽通过使用所述掩模在所述蚀刻停止层处停止所述沟槽围绕衬底冲头的所述沟槽从所述背面延伸到所述前侧; 使用掩模在衬底的背面上沉积金属层，金属层穿透环形沟槽并沉积在衬底冲头上; 通过至少部分地将所述金属层转化为所述基板冲头上的金属硅化物层而在所述基板冲头上形成金属硅化物层; 选择性地除去金属层的剩余部分; 并且关闭衬底背面的环形沟槽。