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1.发明授权公开(公告)号：US08174082B2
公开(公告)日：2012-05-08
申请号：US11628100
申请日：2005-04-28
申请人： Frank Fischer , Eckhard Graf , Heiko Stahl , Hartmut Kueppers , Roland Scheuerer
发明人： Frank Fischer , Eckhard Graf , Heiko Stahl , Hartmut Kueppers , Roland Scheuerer
IPC分类号： H01L27/14
CPC分类号： B81B7/0041 , B81B7/02 , B81B2201/025 , B81C2201/019 , B81C2203/0145
摘要： A micromechanical component having at least two caverns is provided, the caverns being delimited by the micromechanical component and a cap, and the caverns having different internal atmospheric pressures. The micromechanical component and cap are hermetically joined to one another at a first specifiable atmospheric pressure, then an access to at least one cavern is produced, and subsequently the access is hermetically closed off at a second specifiable atmospheric pressure.
摘要翻译： 提供具有至少两个洞穴的微机械部件，该洞穴由微机械部件和盖限定，并且该洞穴具有不同的内部大气压力。 微机械部件和盖子以第一可指定的大气压力彼此气密地接合，然后产生对至少一个洞穴的通路，随后在第二可指定的大气压力下将通道气密地关闭。
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公开(公告)号：US20110014794A1
公开(公告)日：2011-01-20
申请号：US12892008
申请日：2010-09-28
IPC分类号： H01L21/306
CPC分类号： B81C1/00539 , B81C1/00619 , B81C1/00626 , H01L21/30608
摘要： A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.
摘要翻译： 由单晶硅制成的器件，其具有第一侧，与第一侧相对的第二侧，以及从第一侧延伸到第二侧的第三侧，第一侧和第二侧各自延伸 单晶硅的100平面，第三面在单晶硅的111平面的第一区域中延伸。 第三面在单晶硅的110平面的第二区域中延伸。 此外，描述了用于制造由单晶硅制成的器件的制造方法。
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公开(公告)号：US08298962B2
公开(公告)日：2012-10-30
申请号：US12892008
申请日：2010-09-28
IPC分类号： H01L21/302 , H01L21/461 , H01L23/58
CPC分类号： B81C1/00539 , B81C1/00619 , B81C1/00626 , H01L21/30608
摘要： A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.
摘要翻译： 由单晶硅制成的器件，其具有第一侧，与第一侧相对的第二侧，以及从第一侧延伸到第二侧的第三侧，第一侧和第二侧各自延伸 单晶硅的100平面，第三面在单晶硅的111平面的第一区域中延伸。 第三面在单晶硅的110平面的第二区域中延伸。 此外，描述了用于制造由单晶硅制成的器件的制造方法。
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4.发明申请METHOD FOR PRODUCING A MICROMECHANICAL COMPONENT HAVING A TRENCH STRUCTURE FOR BACKSIDE CONTACT 有权用于制造背面接触的拉伸结构的微机械部件的制造方法公开(公告)号：US20120049301A1
公开(公告)日：2012-03-01
申请号：US13291350
申请日：2011-11-08
申请人： Roland Scheuerer , Heribert Weber , Eckhard Graf
发明人： Roland Scheuerer , Heribert Weber , Eckhard Graf
IPC分类号： H01L29/84
CPC分类号： B81C1/00095 , H01L21/76898 , H01L23/481
摘要： A method for manufacturing a micromechanical component is proposed. In this context, at least one trench structure having a depth less than the substrate thickness is to be produced in a substrate. In addition, an insulating layer and a filler layer are produced or applied on a first side of the substrate. The filler layer comprises a filler material that substantially fills up the trench structure. A planar first side of the substrate is produced by way of a subsequent planarization within a plane of the filler layer or of the insulating layer or of the substrate. A further planarization of the second side of the substrate is then accomplished. A micromechanical component that is manufactured in accordance with the method is also described.
摘要翻译： 提出了一种制造微机械部件的方法。 在本上下文中，在衬底中产生具有小于衬底厚度的深度的至少一个沟槽结构。 此外，在基板的第一面上制造或施加绝缘层和填充层。 填充层包括基本上填充沟槽结构的填充材料。 衬底的平面第一侧通过在填充层或绝缘层或衬底的平面内的随后的平坦化产生。 然后完成衬底的第二侧的进一步的平坦化。 还描述了根据该方法制造的微机械部件。
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公开(公告)号：US20110108932A1
公开(公告)日：2011-05-12
申请号：US11793853
申请日：2005-11-04
申请人： Hubert Benzel , Stefan Finkbeiner , Frank Fischer , Helmut Baumann , Lars Metzger , Roland Scheuerer , Peter Brauchle , Andreas Feustel , Matthias Neubauer
发明人： Hubert Benzel , Stefan Finkbeiner , Frank Fischer , Helmut Baumann , Lars Metzger , Roland Scheuerer , Peter Brauchle , Andreas Feustel , Matthias Neubauer
CPC分类号： G01L9/0073
摘要： A manufacturing method for producing a micromechanical sensor element which may be produced in a monolithically integrable design and has capacitive detection of a physical quantity is described. In addition to the manufacturing method, a micromechanical device containing such. a sensor element, e.g., a pressure sensor or an acceleration sensor, is described.
摘要翻译： 描述了可以以单片可集成设计制造并具有物理量的电容检测的微机械传感器元件的制造方法。 除了制造方法之外，还含有这样的微机械装置。 描述了传感器元件，例如压力传感器或加速度传感器。
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公开(公告)号：US07834452B2
公开(公告)日：2010-11-16
申请号：US12215655
申请日：2008-06-27
IPC分类号： H01L21/00
CPC分类号： B81C1/00539 , B81C1/00619 , B81C1/00626 , H01L21/30608
摘要： A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.
摘要翻译： 由单晶硅制成的器件，其具有第一侧，与第一侧相对的第二侧，以及从第一侧延伸到第二侧的第三侧，第一侧和第二侧各自延伸 单晶硅的100平面，第三面在单晶硅的111平面的第一区域中延伸。 第三面在单晶硅的110平面的第二区域中延伸。 此外，描述了用于制造由单晶硅制成的器件的制造方法。
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7.发明申请公开(公告)号：US20080136000A1
公开(公告)日：2008-06-12
申请号：US11628100
申请日：2005-04-28
申请人： Frank Fischer , Eckhard Graf , Heiko Stahl , Hartmut Kueppers , Roland Scheuerer
发明人： Frank Fischer , Eckhard Graf , Heiko Stahl , Hartmut Kueppers , Roland Scheuerer
IPC分类号： H01L23/055 , H01L21/58
CPC分类号： B81B7/0041 , B81B7/02 , B81B2201/025 , B81C2201/019 , B81C2203/0145
摘要： A micromechanical component having at least two caverns is provided, the caverns being delimited by the micromechanical component and a cap, and the caverns having different internal atmospheric pressures. The micromechanical component and cap are hermetically joined to one another at a first specifiable atmospheric pressure, then an access to at least one cavern is produced, and subsequently the access is hermetically closed off at a second specifiable atmospheric pressure.
摘要翻译： 提供具有至少两个洞穴的微机械部件，该洞穴由微机械部件和盖限定，并且该洞穴具有不同的内部大气压力。 微机械部件和盖子以第一可指定的大气压力彼此气密地接合，然后产生对至少一个洞穴的通路，随后在第二可指定的大气压力下将通道气密地关闭。
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8.发明申请METHOD FOR PRODUCING A MICROMECHANICAL COMPONENT HAVING A TRENCH STRUCTURE FOR BACKSIDE CONTACT 有权用于制造背面接触的拉伸结构的微机械部件的制造方法公开(公告)号：US20100133630A1
公开(公告)日：2010-06-03
申请号：US12597137
申请日：2008-04-08
申请人： Roland Scheuerer , Heribert Weber , Eckhard Graf
发明人： Roland Scheuerer , Heribert Weber , Eckhard Graf
CPC分类号： B81C1/00095 , H01L21/76898 , H01L23/481
摘要： A method for manufacturing a micromechanical component is proposed. In this context, at least one trench structure having a depth less than the substrate thickness is to be produced in a substrate. In addition, an insulating layer and a filler layer are produced or applied on a first side of the substrate. The filler layer comprises a filler material that substantially fills up the trench structure. A planar first side of the substrate is produced by way of a subsequent planarization within a plane of the filler layer or of the insulating layer or of the substrate. A further planarization of the second side of the substrate is then accomplished. A micromechanical component that is manufactured in accordance with the method is also described.
摘要翻译： 提出了一种制造微机械部件的方法。 在本上下文中，在衬底中产生具有小于衬底厚度的深度的至少一个沟槽结构。 此外，在基板的第一面上制造或施加绝缘层和填充层。 填充层包括基本上填充沟槽结构的填充材料。 衬底的平面第一侧通过在填充层或绝缘层或衬底的平面内的随后的平坦化产生。 然后完成衬底的第二侧的进一步的平坦化。 还描述了根据该方法制造的微机械部件。
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9.发明申请METHOD FOR PRODUCING A MICROMECHANICAL COMPONENT HAVING A FILLER LAYER AND A MASKING LAYER 有权用于生产具有填充层和掩蔽层的微机电元件的方法公开(公告)号：US20100089868A1
公开(公告)日：2010-04-15
申请号：US12450659
申请日：2008-04-08
申请人： Roland Scheuerer , Heribert Weber , Eckhard Graf
发明人： Roland Scheuerer , Heribert Weber , Eckhard Graf
CPC分类号： B81C1/00333 , B81B2203/033 , B81C1/0015 , B81C2201/0197
摘要： A method for producing a micromechanical component is proposed, a trench structure being substantially completely filled up by a first filler layer, and a first mask layer being applied on the first filler layer, on which in turn a second filler layer and a second mask layer are applied. A micromechanical component is also proposed, the first filler layer filling up the trench structure of the micromechanical component and at the same time forming a movable sensor structure.
摘要翻译： 提出了一种用于制造微机械部件的方法，其中沟槽结构基本上被第一填充层完全填充，第一掩模层被施加在第一填料层上，第二掩模层又在第二填料层和第二掩模层 被应用。 还提出了微机械部件，第一填充层填充微机械部件的沟槽结构，同时形成可移动的传感器结构。
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公开(公告)号：US20090008749A1
公开(公告)日：2009-01-08
申请号：US12215655
申请日：2008-06-27
IPC分类号： H01L29/04 , H01L21/302
CPC分类号： B81C1/00539 , B81C1/00619 , B81C1/00626 , H01L21/30608
摘要： A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.
摘要翻译： 由单晶硅制成的器件，其具有第一侧，与第一侧相对的第二侧，以及从第一侧延伸到第二侧的第三侧，第一侧和第二侧各自延伸 单晶硅的100平面，第三面在单晶硅的111平面的第一区域中延伸。 第三面在单晶硅的110平面的第二区域中延伸。 此外，描述了用于制造由单晶硅制成的器件的制造方法。
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