公开(公告)号：US20130168702A1

公开(公告)日：2013-07-04

申请号：US13818168

申请日：2011-07-15

Applicant: André Barski ,  Matthieu Jamet

Inventor： André Barski ,  Matthieu Jamet

IPC: H01L43/12 ,  H01L43/10 ,  H01L21/02

CPC classification number: H01L43/12 ,  H01L21/02658 ,  H01L43/10

Abstract: A method is provided for preparing a surface of a GaAs substrate (001) such that it can receive a ferromagnetic semiconductor deposited by epitaxy, as well as a substrate thus prepared, method for manufacturing one such semiconductor deposited on the substrate, the resulting semiconductor, and uses thereof. The preparation method renders the surface capable of receiving an epitaxially deposited ferromagnetic semiconductor which may include semiconductors from groups III-V, IV and II-VI of the periodic table, with the exception of GaAs, and which also includes at least one magnetic element of manganese, iron, cobalt, nickel and chromium. The method includes vacuum deoxidation of the surface under a reduced germanium-based flux such that, following desorption of the arsenic and gallium oxide from the said surface, the latter has a single-domain 2×1 reconstruction and is sufficiently planar and arsenic-depleted to prevent any diffusion of arsenic from the substrate to the subsequently deposited semiconductor.

Abstract translation: 提供了一种用于制备GaAs衬底（001）的表面的方法，使得其可以接收通过外延沉积的铁磁半导体以及由此制备的衬底，用于制造沉积在衬底上的一个这种半导体的方法，所得到的半导体， 及其用途。 制备方法使表面能够接收外延沉积的铁磁半导体，其可以包括来自元素周期表的III-V，IV和II-VI族的半导体，但GaAs除外，并且还包括至少一个 锰，铁，钴，镍和铬。 该方法包括在还原的锗基焊剂下对表面进行真空脱氧，使得在从所述表面解吸砷和氧化镓之后，后者具有单畴2×1重建，并且具有足够的平面和砷耗尽 以防止砷从衬底到随后沉积的半导体的任何扩散。

公开(公告)号：US08154282B2

公开(公告)日：2012-04-10

申请号：US12281841

申请日：2007-03-07

Applicant: Patrick Warin ,  Matthieu Jamet

Inventor： Patrick Warin ,  Matthieu Jamet

IPC: G01R33/12

CPC classification number: G01R33/07 ,  G11C11/18 ,  H01L43/065

Abstract: The invention concerns a magnetic field-sensitive component, a magnetic field sensing device and a memory structure each incorporating said component, and a method for detecting a magnetic field using said component. A component according to the invention comprises: at least one diluted magnetic semiconductor, first means for generating an electric current in said semiconductor along one predetermined direction, and second means for producing a signal representing a Hall voltage transverse to said direction, and it is so designed that the semiconductor is selected from the group consisting of II/VI and IV/IV type semiconductors and comprises a zone sensitive to said field which forms all or part of a magnetic quantum well, wherein are confined current carriers incorporated by doping in the semiconductor and inducing in said well ferromagnetic exchange interactions.

Abstract translation: 本发明涉及一种磁场敏感元件，磁场感测装置和各自包含所述部件的存储器结构，以及一种使用所述部件检测磁场的方法。 根据本发明的部件包括：至少一个稀释磁性半导体，用于沿着一个预定方向在所述半导体中产生电流的第一装置，以及用于产生表示横向于所述方向的霍尔电压的信号的第二装置， 设计为半导体选自II / VI和IV / IV型半导体，并且包括对所述场敏感的区域，其形成全部或部分磁量子阱，其中是通过掺杂在半导体中并入的限定电流载流子 并诱导所述阱铁磁交换相互作用。

公开(公告)号：US20090230954A1

公开(公告)日：2009-09-17

申请号：US12161995

申请日：2007-02-01

Applicant: Matthieu Jamet ,  Yves Samson ,  Andre Barski ,  Thibaut Devillers

Inventor： Matthieu Jamet ,  Yves Samson ,  Andre Barski ,  Thibaut Devillers

IPC: G01R33/02 ,  H01L43/06 ,  H01L21/28

CPC classification number: H01F10/193 ,  B82Y25/00 ,  B82Y40/00 ,  C30B23/063 ,  C30B29/52 ,  G01R33/09 ,  G01R33/093 ,  H01F1/405 ,  H01F41/30

Abstract: The inventive ferromagnetic semiconductor comprises at least one magnetic element selected from the group consisting of Mn, Fe, Co, Ni and Cr, and has a Curie temperature which is equal to or higher than 350 K, and advantageously 400 K or higher. The semiconductor has a matrix which is depleted in magnetic element(s) and contains a discontinuous phase which is formed from columns, enriched with magnetic elements, and is ferromagnetic up to said Curie temperature, in such a way as to generate a lateral modulation of the composition of the semiconductor in the plane of the thin layer. Also disclosed is a method for the production of the semiconductor, a diode-type electronic component for the injection or collection of spins into or from another semiconductor respectively, or an electronic component which is sensitive to a magnetic field, and uses of the semiconductor relating to such a component.

Abstract translation: 本发明的铁磁半导体包括选自Mn，Fe，Co，Ni和Cr中的至少一种磁性元素，并且具有等于或高于350K，有利地为400K或更高的居里温度。 该半导体具有一个耗尽磁性元件的矩阵，并且包含由富集磁性元件的列形成的不连续相，并且是铁磁性直到所述居里温度，以产生横向调制 半导体在薄层平面上的组成。 还公开了一种用于制造半导体的方法，用于将自旋注入或收集到另一个半导体中的二极管型电子部件或对磁场敏感的电子部件，以及半导体相关的使用 到这样一个组件。

公开(公告)号：US07821818B2

公开(公告)日：2010-10-26

申请号：US12083398

申请日：2006-10-13

Applicant: Bernard Dieny ,  Anatoly Vedyaev ,  Jérôme Faure-Vincent ,  Patrick Warin ,  Matthieu Jamet ,  Yves Samson

Inventor： Bernard Dieny ,  Anatoly Vedyaev ,  Jérôme Faure-Vincent ,  Patrick Warin ,  Matthieu Jamet ,  Yves Samson

IPC: G11C11/00

CPC classification number: G11C11/15 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/305 ,  H01L27/222 ,  H01L43/08

Abstract: The magnetic device comprises a magnetic device comprising a magnetoresistive tunnel junction (100), itself comprising: a reference magnetic layer (120) having magnetization in a direction that is fixed; a storage magnetic layer (110) having magnetization in a direction that is variable; and an intermediate layer (130) acting as a tunnel barrier that is essentially semiconductor or electrically insulating and that separates the reference magnetic layer (120) from the storage magnetic layer (110). The potential profile of the intermediate layer (130) is asymmetrical across the thickness of said layer (130) so as to produce a current response that is asymmetrical as a function of the applied voltage. The device is applicable to magnetic random access memories.

Abstract translation: 磁性装置包括磁性装置，该磁性装置包括磁阻隧道结（100），其自身包括：具有沿固定方向的磁化的参考磁性层（120） 存储磁性层（110），其具有在可变的方向上的磁化; 以及用作隧道势垒的中间层（130），其基本上是半导体或电绝缘的，并且将参考磁性层（120）与存储磁性层（110）分离。 中间层（130）的电位分布在所述层（130）的厚度上是不对称的，以便产生作为施加电压的函数的不对称的电流响应。 该器件适用于磁性随机存取存储器。

公开(公告)号：US20090251139A1

公开(公告)日：2009-10-08

申请号：US12281841

申请日：2007-03-07

Applicant: Patrick Warin ,  Matthieu Jamet

Inventor： Patrick Warin ,  Matthieu Jamet

IPC: G01R33/02 ,  H01L29/82 ,  G11B5/127

CPC classification number: G01R33/07 ,  G11C11/18 ,  H01L43/065

Abstract: The invention concerns a magnetic field-sensitive component, a magnetic field sensing device and a memory structure each incorporating said component, and a method for detecting a magnetic field using said component. A component according to the invention comprises: at least one diluted magnetic semiconductor, first means for generating an electric current in said semiconductor along one predetermined direction, and second means for producing a signal representing a Hall voltage transverse to said direction, and it is so designed that the semiconductor is selected from the group consisting of II/VI and IV/IV type semiconductors and comprises a zone sensitive to said field which forms all or part of a magnetic quantum well, wherein are confined current carriers incorporated by doping in the semiconductor and inducing in said well ferromagnetic exchange interactions.

Abstract translation: 本发明涉及一种磁场敏感元件，磁场感测装置和各自包含所述部件的存储器结构，以及一种使用所述部件检测磁场的方法。 根据本发明的部件包括：至少一个稀释磁性半导体，用于沿着一个预定方向在所述半导体中产生电流的第一装置，以及用于产生表示横向于所述方向的霍尔电压的信号的第二装置， 设计为半导体选自II / VI和IV / IV型半导体，并且包括对所述场敏感的区域，其形成全部或部分磁量子阱，其中是通过掺杂在半导体中并入的限定电流载流子 并诱导所述阱铁磁交换相互作用。

公开(公告)号：US08310018B2

公开(公告)日：2012-11-13

申请号：US12161995

申请日：2007-02-01

Applicant: Matthieu Jamet ,  Yves Samson ,  André Barski ,  Thibaut Devillers

Inventor： Matthieu Jamet ,  Yves Samson ,  André Barski ,  Thibaut Devillers

IPC: H01L29/82

CPC classification number: H01F10/193 ,  B82Y25/00 ,  B82Y40/00 ,  C30B23/063 ,  C30B29/52 ,  G01R33/09 ,  G01R33/093 ,  H01F1/405 ,  H01F41/30

Abstract: The inventive ferromagnetic semiconductor comprises at least one magnetic element selected from the group consisting of Mn, Fe, Co, Ni and Cr, and has a Curie temperature which is equal to or higher than 350 K, and advantageously 400 K or higher. The semiconductor has a matrix which is depleted in magnetic element(s) and contains a discontinuous phase which is formed from columns, enriched with magnetic elements, and is ferromagnetic up to said Curie temperature, in such a way as to generate a lateral modulation of the composition of the semiconductor in the plane of the thin layer. Also disclosed is a method for the production of the semiconductor, a diode-type electronic component for the injection or collection of spins into or from another semiconductor respectively, or an electronic component which is sensitive to a magnetic field, and uses of the semiconductor relating to such a component.

Abstract translation: 本发明的铁磁半导体包括选自Mn，Fe，Co，Ni和Cr中的至少一种磁性元素，并且具有等于或高于350K，有利地为400K或更高的居里温度。 该半导体具有一个耗尽磁性元件的矩阵，并且包含由富集磁性元件的列形成的不连续相，并且是铁磁性直到所述居里温度，以产生横向调制 半导体在薄层平面上的组成。 还公开了一种用于制造半导体的方法，用于将自旋注入或收集到另一个半导体中的二极管型电子部件或对磁场敏感的电子部件，以及半导体相关的使用 到这样一个组件。

公开(公告)号：US20090231909A1

公开(公告)日：2009-09-17

申请号：US12083398

申请日：2006-10-13

Applicant: Bernard Dieny ,  Anatoly Vedyaev ,  Jerome Faure-Vincent ,  Patrick Warin ,  Matthieu Jamet ,  Yves Samson

Inventor： Bernard Dieny ,  Anatoly Vedyaev ,  Jerome Faure-Vincent ,  Patrick Warin ,  Matthieu Jamet ,  Yves Samson

IPC: G11C11/00 ,  H01L29/82 ,  G11C11/14

CPC classification number: G11C11/15 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/305 ,  H01L27/222 ,  H01L43/08

Abstract: The magnetic device comprises a magnetic device comprising a magnetoresistive tunnel junction (100), itself comprising: a reference magnetic layer (120) having magnetization in a direction that is fixed; a storage magnetic layer (110) having magnetization in a direction that is variable; and an intermediate layer (130) acting as a tunnel barrier that is essentially semiconductor or electrically insulating and that separates the reference magnetic layer (120) from the storage magnetic layer (110). The potential profile of the intermediate layer (130) is asymmetrical across the thickness of said layer (130) so as to produce a current response that is asymmetrical as a function of the applied voltage. The device is applicable to magnetic random access memories.

Abstract translation: 磁性装置包括磁性装置，该磁性装置包括磁阻隧道结（100），其自身包括：具有沿固定方向的磁化的参考磁性层（120） 存储磁性层（110），其具有在可变的方向上的磁化; 以及用作隧道势垒的中间层（130），其基本上是半导体或电绝缘的，并且将参考磁性层（120）与存储磁性层（110）分离。 中间层（130）的电位分布在所述层（130）的厚度上是不对称的，以便产生作为施加电压的函数的不对称的电流响应。 该器件适用于磁性随机存取存储器。