公开(公告)号：US4762728A

公开(公告)日：1988-08-09

申请号：US801955

申请日：1985-11-26

申请人： Thomas Keyser ,  Bruce R. Cairns ,  Kranti V. Anand ,  William G. Petro ,  Michael L. Barry

发明人： Thomas Keyser ,  Bruce R. Cairns ,  Kranti V. Anand ,  William G. Petro ,  Michael L. Barry

IPC分类号： H01L21/28 ,  H01L21/318 ,  H01L21/762 ,  H01L21/763 ,  H01L29/51 ,  B05D3/06

CPC分类号： H01L21/28185 ,  H01L21/28 ,  H01L21/28202 ,  H01L21/3185 ,  H01L21/76202 ,  H01L21/76224 ,  H01L21/763 ,  H01L29/513 ,  H01L29/518

摘要： A silicon nitride layer is prepared on the surface of a silicon substrate by carrying out a surface reaction on the substrate in a vacuum chamber that contains an electrode which is capacitively coupled to an rf generator. A second electrode within the chamber, or a metal wall of the chamber itself, is connected to ground. The silicon substrates to be treated are placed on one of the electrodes to be in electrical and physical contact therewith, and a reagent gas that contains nitrogen is introduced into the chamber. An rf voltage is then applied between the electrodes to ionize and activate the gas, and cause ions and other active species thereof to be directed into the silicon substrate. The nitrogen ions and other active species that are created as a result of the application of the rf power can be directed at the surface of a number of wafers simultaneously. The thin nitride films that are formed by the process have application both as barriers for device isolation and as dielectric components of electrical devices.

摘要翻译： 通过在包含电容耦合到rf发生器的电极的真空室中在衬底上进行表面反应，在硅衬底的表面上制备氮化硅层。 室内的第二电极或腔室本身的金属壁连接到地面。 要处理的硅衬底被放置在电极中的一个电极上并与其物理接触，并且将含有氮的反应气体引入室中。 然后在电极之间施加rf电压以电离和激活气体，并且使离子和其它活性物质被引导到硅衬底中。 作为施加射频功率的结果产生的氮离子和其它活性物质可以同时指向多个晶片的表面。 通过该方法形成的薄氮化物膜既可用作器件隔离的障碍，也可用作电气器件的介电元件。

公开(公告)号：US07258049B2

公开(公告)日：2007-08-21

申请号：US11007609

申请日：2004-12-08

申请人： Horst Grafe ,  Jürgen Merz ,  Jochen Münker ,  Duane A. Nielsen ,  Michael L. Barry

发明人： Horst Grafe ,  Jürgen Merz ,  Jochen Münker ,  Duane A. Nielsen ,  Michael L. Barry

IPC分类号： B26F3/02 ,  B31B1/25

CPC分类号： B23D25/12 ,  B23D31/002 ,  B65D90/14 ,  B65G69/003 ,  Y10T83/0341 ,  Y10T83/04 ,  Y10T83/0515 ,  Y10T83/4676 ,  Y10T225/12 ,  Y10T225/30

摘要： A method of operating a flying shear for cutting a rolled strip, which includes at least one drum provided with a blade, includes synchronizing a peripheral speed of the blade with a feed rate of the rolled strip, and cutting the rolled strip by effecting a partial penetration of the blade in the rolled strip to produce a weakened location of the rolled strip, and by tearing the rolled strip at the weakened location by a tensile force.

摘要翻译： 一种操作用于切割轧制带材的飞剪的方法，该方法包括设置有叶片的至少一个滚筒，包括使叶片的圆周速度与轧制带材的进给速度同步，并且通过实施部分 刀片在轧制带材中的穿透以产生轧制带材的弱化位置，并且通过拉力在弱化位置撕裂轧制带材。

公开(公告)号：US5724846A

公开(公告)日：1998-03-10

申请号：US594542

申请日：1996-01-31

申请人： Albert C. Wang ,  K. Wing Chang ,  L. Duane Dunlap ,  Jing Luo ,  D. Frederick Stewart ,  Michael L. Barry ,  Terry C. Lee

发明人： Albert C. Wang ,  K. Wing Chang ,  L. Duane Dunlap ,  Jing Luo ,  D. Frederick Stewart ,  Michael L. Barry ,  Terry C. Lee

IPC分类号： B21B13/14 ,  B21B37/00 ,  B21B37/58 ,  B21B31/00

CPC分类号： B21B37/007

摘要： A method of preventing roll chatter in a stand of a rolling mill during the process of directing a strip of material through the mill. The method comprises the step of introducing into the stand a low power vibration component that prevents the rolls in the stand from vertically oscillating in any generally large, uncontrollable manner.

摘要翻译： 在将材料条引导通过磨机的过程中，防止在轧机的机架中的滚动颤振的方法。 该方法包括以下步骤：将防止支架中的辊子以任何大体上不可控制的方式垂直摆动的低功率振动部件引入支架。