公开(公告)号：US20090218045A1

公开(公告)日：2009-09-03

申请号：US12092381

申请日：2006-11-01

申请人： Mitsuru Hiroshima ,  Hiromi Asakura ,  Syouzou Watanabe ,  Mitsuhiro Okune ,  Hiroyuki Suzuki ,  Ryuzou Houchin

发明人： Mitsuru Hiroshima ,  Hiromi Asakura ,  Syouzou Watanabe ,  Mitsuhiro Okune ,  Hiroyuki Suzuki ,  Ryuzou Houchin

IPC分类号： C23F1/08 ,  C23C16/54

CPC分类号： H01J37/32082

摘要： The plasma processing apparatus has a beam-shaped spacer 7 placed at the upper opening of the chamber 3 opposed to the substrate 2. The beam-shaped spacer 7 has an annular outer peripheral portion 7a whose lower surface 7d is supported by the chamber 3, a central portion 7b located at the center of a region surrounded by the outer peripheral portion 7a in plane view, and a plurality of beam portions 7c extending radially from the central portion 7b to the outer peripheral portion 7a. An entire of a dielectric plate 8 is uniformly supported by the beam-shaped spacer 7. The dielectric plate 8 can be reduces in thickness while securing a mechanical strength for supporting the atmospheric pressure when the chamber 3 is internally reduced in pressure.

摘要翻译： 等离子体处理装置具有放置在与基板2相对的室3的上开口处的波束形间隔件7.梁状间隔件7具有环形外周部7a，其下表面7d由室3支撑， 位于由平面内的外周部7a包围的区域的中心的中央部7b，以及从中央部7b向外周部7a径向延伸的多个梁部7c。 整个电介质板8均匀地被梁状间隔件7支撑。当室3在内部压力降低时，电介质板8的厚度可以减小，同时确保用于支撑大气压力的机械强度。

公开(公告)号：US08673166B2

公开(公告)日：2014-03-18

申请号：US12994940

申请日：2009-05-28

申请人： Shogo Okita ,  Hiromi Asakura ,  Syouzou Watanabe ,  Toshihiro Wada ,  Mitsuhiro Okune ,  Mitsuru Hiroshima

发明人： Shogo Okita ,  Hiromi Asakura ,  Syouzou Watanabe ,  Toshihiro Wada ,  Mitsuhiro Okune ,  Mitsuru Hiroshima

IPC分类号： H01L21/683

CPC分类号： H01L21/6831 ,  H01J37/32431 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68742 ,  Y10S414/137 ,  Y10T279/23

摘要： In a plasma processing apparatus, thrust-up pins are elevated and a thrust-up force is detected when electrostatic attraction for a substrate by a substrate holding device is ceased after completion of plasma processing, the elevation of the thrust-up pins is ceased upon detection of a detection threshold, and a stepped elevating operation in which the elevation and stoppage of the thrust-up pins are repeated a plurality of times are thereafter commenced on condition that the detected thrust-up force falls to or below the detection threshold and that release of the substrate from a placement surface has not been completed. In the stepped elevating operation, operation timing of the thrust-up device is controlled so that the completion of the release of the substrate from the placement surface is detected when the thrust-up pins are stopped after being elevated and so that the stepped elevating operation is continued on condition that the release has not been completed.

摘要翻译： 在等离子体处理装置中，在等离子体处理完成之后，由于基板保持装置对基板的静电吸引停止，所以上推销被升高，并且检测到上推力，因此停止上推销的升高 检测阈值的检测，并且其中多次加重上推销的升降动作的阶梯式升降动作，在检测到的上推力降至或低于检测阈值的条件下开始，并且 基板从放置表面的释放尚未完成。 在阶梯式升降操作中，控制上推装置的动作正时，使得当升降销在升高后停止时检测到基板从放置面的释放的完成，并且使阶梯式升降操作 在发布尚未完成的情况下继续进行。

公开(公告)号：US20110111601A1

公开(公告)日：2011-05-12

申请号：US12994940

申请日：2009-05-28

申请人： Shogo Okita ,  Hiromi Asakura ,  Syouzou Watanabe ,  Toshihiro Wada ,  Mitsuhiro Okune ,  Mitsuru Hiroshima

发明人： Shogo Okita ,  Hiromi Asakura ,  Syouzou Watanabe ,  Toshihiro Wada ,  Mitsuhiro Okune ,  Mitsuru Hiroshima

IPC分类号： H01L21/3065 ,  C23F1/08

CPC分类号： H01L21/6831 ,  H01J37/32431 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68742 ,  Y10S414/137 ,  Y10T279/23

摘要： In a plasma processing apparatus, thrust-up pins are elevated and a thrust-up force is detected when electrostatic attraction for a substrate by a substrate holding device is ceased after completion of plasma processing, the elevation of the thrust-up pins is ceased upon detection of a detection threshold, and a stepped elevating operation in which the elevation and stoppage of the thrust-up pins are repeated a plurality of times are thereafter commenced on condition that the detected thrust-up force falls to or below the detection threshold and that release of the substrate from a placement surface has not been completed. In the stepped elevating operation, operation timing of the thrust-up device is controlled so that the completion of the release of the substrate from the placement surface is detected when the thrust-up pins are stopped after being elevated and so that the stepped elevating operation is continued on condition that the release has not been completed.

摘要翻译： 在等离子体处理装置中，在等离子体处理完成之后，通过衬底保持装置对衬底进行静电吸引时，上推销被升高并且检测到推力，当止动销的升高停止时， 检测阈值的检测，并且其中多次加重上推销的升降动作的阶梯式升降动作，在检测到的上推力降至或低于检测阈值的条件下开始，并且 基板从放置表面的释放尚未完成。 在阶梯式升降操作中，控制上推装置的动作正时，使得当升降销在升高后停止时检测到基板从放置面的释放的完成，并且使阶梯式升降操作 在发布尚未完成的情况下继续进行。

公开(公告)号：US20100173431A1

公开(公告)日：2010-07-08

申请号：US12676186

申请日：2008-08-25

申请人： Shogo Okita ,  Gaku Sugahara ,  Hiroyuki Suzuki ,  Ryuzou Houchin ,  Mitsuru Hiroshima

发明人： Shogo Okita ,  Gaku Sugahara ,  Hiroyuki Suzuki ,  Ryuzou Houchin ,  Mitsuru Hiroshima

IPC分类号： H01L21/31 ,  H01L21/3065

CPC分类号： H01L21/02032 ,  H01L21/3065

摘要： Provided is a wafer reclamation method for reclaiming a semiconductor wafer, on which a different material layer is formed, by removing the different material layer. The wafer reclamation method includes a physically removing step of physically removing the different material layer, a film forming step of forming a film on a surface of the semiconductor wafer from which the different material layer has been removed in the physically removing step, and a dry etching step of etching the semiconductor wafer by plasma together with the film formed in the film forming step.

摘要翻译： 提供了通过去除不同的材料层来回收其上形成有不同材料层的半导体晶片的晶片回收方法。 晶片回收方法包括物理去除不同材料层的物理去除步骤，在物理去除步骤中在其上除去不同材料层的半导体晶片的表面上形成膜的成膜步骤，以及干燥 蚀刻步骤，通过等离子体与形成在膜形成步骤中的膜一起蚀刻半导体晶片。

公开(公告)号：US08563332B2

公开(公告)日：2013-10-22

申请号：US12676186

申请日：2008-08-25

申请人： Shogo Okita ,  Gaku Sugahara ,  Hiroyuki Suzuki ,  Ryuzou Houchin ,  Mitsuru Hiroshima

发明人： Shogo Okita ,  Gaku Sugahara ,  Hiroyuki Suzuki ,  Ryuzou Houchin ,  Mitsuru Hiroshima

IPC分类号： H01L21/31 ,  H01L21/3065

CPC分类号： H01L21/02032 ,  H01L21/3065

摘要： Provided is a wafer reclamation method for reclaiming a semiconductor wafer, on which a different material layer is formed, by removing the different material layer. The wafer reclamation method includes a physically removing step of physically removing the different material layer, a film forming step of forming a film on a surface of the semiconductor wafer from which the different material layer has been removed in the physically removing step, and a dry etching step of etching the semiconductor wafer by plasma together with the film formed in the film forming step.

摘要翻译： 提供了通过去除不同的材料层来回收其上形成有不同材料层的半导体晶片的晶片回收方法。 晶片回收方法包括物理去除不同材料层的物理去除步骤，在物理去除步骤中在其上除去不同材料层的半导体晶片的表面上形成膜的成膜步骤，以及干燥 蚀刻步骤，通过等离子体与形成在膜形成步骤中的膜一起蚀刻半导体晶片。

公开(公告)号：US20080138993A1

公开(公告)日：2008-06-12

申请号：US11794306

申请日：2005-12-06

申请人： Mitsuru Hiroshima ,  Sumio Miyake ,  Mitsuhiro Okune ,  Shozoh Watanabe ,  Hiroyuki Suzuki

发明人： Mitsuru Hiroshima ,  Sumio Miyake ,  Mitsuhiro Okune ,  Shozoh Watanabe ,  Hiroyuki Suzuki

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/321 ,  H01J37/32935 ,  H01J37/3299 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： A dry etching apparatus comprises: a vacuum chamber where a processing target is disposed on a bottom wall side of an internal space; a coil for generating plasma that is disposed above and outside the vacuum chamber and has conductors disposed so that a gap is formed in a plane view; a top wall that closes the top of the internal space and has a transparent section at a position corresponding to the gap between conductors of the coil 36 in the plane view; and a camera that is disposed above the coil and can capture at least a part of the processing target in a field of view through the gap and the transparent section. The status of the processing target during plasma processing can be observed in real-time.

摘要翻译： 干蚀刻装置包括：真空室，其中处理对象设置在内部空间的底壁侧; 用于产生等离子体的线圈，其设置在真空室的上方和外部，并具有布置成在平面图中形成间隙的导体; 顶壁，其封闭内部空间的顶部，并且在与平面图中的线圈36的导体之间的间隙对应的位置处具有透明部分; 以及设置在线圈上方并且可以通过间隙和透明部分在视场中捕获处理目标的至少一部分的照相机。 可以实时观察等离子体处理过程中处理对象的状态。

公开(公告)号：US20070131652A1

公开(公告)日：2007-06-14

申请号：US10581256

申请日：2004-11-26

申请人： Mitsuhiro Okune ,  Mitsuru Hiroshima ,  Hiroyuki Suzuki ,  Sumio Miyake ,  Shouzou Watanabe

发明人： Mitsuhiro Okune ,  Mitsuru Hiroshima ,  Hiroyuki Suzuki ,  Sumio Miyake ,  Shouzou Watanabe

IPC分类号： C23F1/00 ,  B44C1/22 ,  H01L21/302

CPC分类号： H01J37/321 ,  H01J2237/3347 ,  H01L21/3065

摘要： An object of the present invention is to provide a plasma etching method by which both of a requirement for a trench shape and a requirement for a aspect ratio can be satisfied, and a trench having a side wall of a smooth shape can be formed. According to the present invention, a silicon substrate is placed on a lower electrode (120), etching gas is supplied through a gas introducing port (140) and exhausted from an exhaust port (150), high frequency powers (130a, 130b) supply high-frequency electricity to an upper electrode (110) and a lower electrode (120), respectively, in order to energize the etching gas into plasma state, using an ICP method, and then activated species are generated to make etching of the silicon substrate be progressed. As the etching gas, mixed gas, which includes mainly SF6 gas added with O2 gas and He gas, is used.

摘要翻译： 本发明的目的是提供一种等离子体蚀刻方法，其中可以满足沟槽形状的要求和宽高比的要求，并且可以形成具有平滑形状的侧壁的沟槽。 根据本发明，将硅衬底放置在下电极（120）上，通过气体导入口（140）供给蚀刻气体并从排气口（150）排出高频电力（130a，130b ）分别向上部电极（110）和下部电极（120）供给高频电力，以使用ICP方法将蚀刻气体激发成等离子体状态，然后产生活化物质，以使 硅衬底进行。 作为蚀刻气体，使用主要包含添加有O 2气体的SF 6气体和He气体的混合气体。

公开(公告)号：US20100089870A1

公开(公告)日：2010-04-15

申请号：US12532268

申请日：2008-03-19

申请人： Mitsuru Hiroshima ,  Hiromi Asakura

发明人： Mitsuru Hiroshima ,  Hiromi Asakura

IPC分类号： C23F1/00 ,  C23C16/00 ,  C23F1/08 ,  C23C16/505

CPC分类号： H05H1/46 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244

摘要： A plasma processing apparatus includes a beam-shaped spacer 7 which is placed at an upper opening of a chamber 3 opposed to a substrate 2 to support a dielectric plate 8. The dielectric plate 8 is supported by the beam-shaped spacer 7. In the beam-shaped spacer 7 are provided a plurality of process gas introducing ports 31, 36 which have a depression angle θd and which are provided downward and directed toward the substrate 2, as well as a plurality of rare gas introducing ports 41 having a elevation angle θe directed toward the dielectric plate 8. Improvement of processing rates such as etching rate as well as effective suppression of wear of the dielectric plate 8 can be achieved.

摘要翻译： 等离子体处理装置包括一个放置在与衬底2相对的腔3的上部开口处以支撑电介质板8的梁形间隔件7.电介质板8由梁形间隔件7支撑。在 梁状间隔件7设置有多个处理气体导入口31,36，它们具有凹陷角度＆amp; t; d并且向下并且朝向基板2，以及多个稀有气体导入口41，其具有 俯仰角度; e朝向电介质板8.可以实现诸如蚀刻速率的处理速率的改善以及有效抑制电介质板8的磨损。

公开(公告)号：US08906249B2

公开(公告)日：2014-12-09

申请号：US12532268

申请日：2008-03-19

申请人： Mitsuru Hiroshima ,  Hiromi Asakura

发明人： Mitsuru Hiroshima ,  Hiromi Asakura

IPC分类号： C03C15/00 ,  H01L21/461 ,  H01J37/32 ,  C23C16/455 ,  H05H1/46 ,  C23C16/507

CPC分类号： H05H1/46 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244

摘要： A plasma processing apparatus includes a beam-shaped spacer 7 which is placed at an upper opening of a chamber 3 opposed to a substrate 2 to support a dielectric plate 8. The dielectric plate 8 is supported by the beam-shaped spacer 7. In the beam-shaped spacer 7 are provided a plurality of process gas introducing ports 31, 36 which have a depression angle θd and which are provided downward and directed toward the substrate 2, as well as a plurality of rare gas introducing ports 41 having a elevation angle θe directed toward the dielectric plate 8. Improvement of processing rates such as etching rate as well as effective suppression of wear of the dielectric plate 8 can be achieved.

摘要翻译： 等离子体处理装置包括一个放置在与衬底2相对的腔3的上部开口处以支撑电介质板8的梁形间隔件7.电介质板8由梁形间隔件7支撑。在 梁状间隔件7设置有多个处理气体导入口31,36，它们具有凹陷角度＆amp; t; d并且向下并且朝向基板2，以及多个稀有气体导入口41，其具有 俯仰角度; e朝向电介质板8.可以实现诸如蚀刻速率的处理速率的改善以及有效抑制电介质板8的磨损。