公开(公告)号：US20080067524A1

公开(公告)日：2008-03-20

申请号：US11854878

申请日：2007-09-13

申请人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat Silan ,  Hudson Hobgood ,  Calvin Carter ,  Vijay Balakrishna ,  Robert Leonard ,  Adrian Powell ,  Valeri Tsvetkov ,  Jason Jenny

发明人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat Silan ,  Hudson Hobgood ,  Calvin Carter ,  Vijay Balakrishna ,  Robert Leonard ,  Adrian Powell ,  Valeri Tsvetkov ,  Jason Jenny

IPC分类号： B32B3/00 ,  C01B31/00 ,  H01L29/94

CPC分类号： H01L29/1608 ,  C30B23/002 ,  C30B23/005 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02634 ,  Y10T428/21

摘要： Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

公开(公告)号：US20080083366A1

公开(公告)日：2008-04-10

申请号：US11854864

申请日：2007-09-13

申请人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat Silan ,  Hudson Hobgood ,  Calvin Carter ,  Vijay Balakrishna ,  Robert Leonard ,  Adrian Powell ,  Valeri Tsvetkov ,  Jason Jenny

发明人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat Silan ,  Hudson Hobgood ,  Calvin Carter ,  Vijay Balakrishna ,  Robert Leonard ,  Adrian Powell ,  Valeri Tsvetkov ,  Jason Jenny

IPC分类号： C30B23/00 ,  C30B25/00

CPC分类号： H01L29/1608 ,  C30B23/002 ,  C30B23/005 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02634 ,  Y10T428/21

摘要： Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

摘要翻译： 公开了无微波，单晶，碳化硅（SiC）和相关制造方法。 通过将源材料和种子材料放置在升华系统的反应坩埚中的种子保持器上来生长SiC，其中包括源材料，反应坩埚和种子保持器的升华系统的构成成分基本上没有无意的杂质。 通过控制PVT过程中生长温度，生长压力，SiC升华通量和组成以及种子材料或种子材料上生长的SiC晶体之间的温度梯度，消除了微管诱导过程的不稳定性， 在种子材料上生长游离的SiC晶体。