公开(公告)号：US20080083366A1

公开(公告)日：2008-04-10

申请号：US11854864

申请日：2007-09-13

申请人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat Silan ,  Hudson Hobgood ,  Calvin Carter ,  Vijay Balakrishna ,  Robert Leonard ,  Adrian Powell ,  Valeri Tsvetkov ,  Jason Jenny

发明人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat Silan ,  Hudson Hobgood ,  Calvin Carter ,  Vijay Balakrishna ,  Robert Leonard ,  Adrian Powell ,  Valeri Tsvetkov ,  Jason Jenny

IPC分类号： C30B23/00 ,  C30B25/00

CPC分类号： H01L29/1608 ,  C30B23/002 ,  C30B23/005 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02634 ,  Y10T428/21

摘要： Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

摘要翻译： 公开了无微波，单晶，碳化硅（SiC）和相关制造方法。 通过将源材料和种子材料放置在升华系统的反应坩埚中的种子保持器上来生长SiC，其中包括源材料，反应坩埚和种子保持器的升华系统的构成成分基本上没有无意的杂质。 通过控制PVT过程中生长温度，生长压力，SiC升华通量和组成以及种子材料或种子材料上生长的SiC晶体之间的温度梯度，消除了微管诱导过程的不稳定性， 在种子材料上生长游离的SiC晶体。

公开(公告)号：US20080067524A1

公开(公告)日：2008-03-20

申请号：US11854878

申请日：2007-09-13

申请人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat Silan ,  Hudson Hobgood ,  Calvin Carter ,  Vijay Balakrishna ,  Robert Leonard ,  Adrian Powell ,  Valeri Tsvetkov ,  Jason Jenny

发明人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat Silan ,  Hudson Hobgood ,  Calvin Carter ,  Vijay Balakrishna ,  Robert Leonard ,  Adrian Powell ,  Valeri Tsvetkov ,  Jason Jenny

IPC分类号： B32B3/00 ,  C01B31/00 ,  H01L29/94

CPC分类号： H01L29/1608 ,  C30B23/002 ,  C30B23/005 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02634 ,  Y10T428/21

摘要： Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

公开(公告)号：US20060213430A1

公开(公告)日：2006-09-28

申请号：US11248579

申请日：2005-10-12

申请人： Jason Jenny ,  David Malta ,  Hudson Hobgood ,  Stephan Mueller ,  Mark Brady ,  Robert Leonard ,  Adrian Powell ,  Valeri Tsvetkov ,  George Fechko ,  Calvin Carter

发明人： Jason Jenny ,  David Malta ,  Hudson Hobgood ,  Stephan Mueller ,  Mark Brady ,  Robert Leonard ,  Adrian Powell ,  Valeri Tsvetkov ,  George Fechko ,  Calvin Carter

IPC分类号： C30B23/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B23/00 ,  C30B23/025 ,  C30B29/36 ,  C30B33/00 ,  H01L21/324

摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system and in the absence of a solid silicon carbide source, by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.

摘要翻译： 公开了一种用于在种子生长系统中生产高质量大块碳化硅单晶并且在不存在固体碳化硅源的情况下，通过减少碳化硅晶种和种子保持器之间的分离直到导电传热 晶种和种子保持器之间的种子晶种和种子保持器之间的辐射热传递在基本上与种子保持器相邻的整个晶种表面上。

公开(公告)号：US20060107890A1

公开(公告)日：2006-05-25

申请号：US11248458

申请日：2005-10-12

申请人： Hudson Hobgood ,  Jason Jenny ,  David Malta ,  Valeri Tsvetkov ,  Calvin Carter ,  Robert Leonard ,  George Fechko

发明人： Hudson Hobgood ,  Jason Jenny ,  David Malta ,  Valeri Tsvetkov ,  Calvin Carter ,  Robert Leonard ,  George Fechko

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B29/36 ,  C30B23/00 ,  C30B23/025 ,  C30B33/00 ,  H01L21/324 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1016 ,  Y10T428/21 ,  Y10T428/31

摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system. The method includes positioning a seed crystal on the seed holder with a low porosity backing material that provides a vapor barrier to silicon carbide sublimation from the seed and that minimizes the difference in thermal conductivity between the seed and the backing material to minimize or eliminate temperature differences across the seed and likewise minimize or eliminate vapor transport from the rear of the seed that would otherwise initiate and propagate defects in the growing crystal.

摘要翻译： 公开了用于在种子生长系统中生产高质量的碳化硅块状单晶的方法。 该方法包括用低孔隙率背衬材料将晶种定位在种子保持器上，该材料提供了从种子对碳化硅升华的蒸汽屏障，并使种子和背衬材料之间的热导率差最小化以最小化或消除温差 跨越种子，并且同样使来自种子后部的蒸汽输送最小化或消除，否则将引发和传播生长晶体中的缺陷。

公开(公告)号：US20050126471A1

公开(公告)日：2005-06-16

申请号：US10876963

申请日：2004-06-25

申请人： Jason Jenny ,  David Malta ,  Hudson Hobgood ,  Stephan Mueller ,  Mark Brady ,  Robert Leonard ,  Adrian Powell ,  Valeri Tsvetkov

发明人： Jason Jenny ,  David Malta ,  Hudson Hobgood ,  Stephan Mueller ,  Mark Brady ,  Robert Leonard ,  Adrian Powell ,  Valeri Tsvetkov

IPC分类号： H01L21/205 ,  C30B23/00 ,  C30B29/36 ,  C30B33/00 ,  H01L21/324 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B29/36 ,  C30B23/00 ,  C30B23/025 ,  C30B33/00 ,  H01L21/324 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1016 ,  Y10T428/21 ,  Y10T428/31

摘要： A single polytype single crystal silicon carbide wafer is disclosed having a diameter greater than three inches and less than five inches, resistivity greater than 10,000 ohm-cm, a micropipe density less than 200 cm−2, and a combined concentration of shallow level dopants less than 5E16 cm−3.

摘要翻译： 公开了单个多型单晶碳化硅晶片，其直径大于3英寸且小于5英寸，电阻率大于10,000欧姆 - 厘米，微管密度小于200厘米-2，以及 浅层掺杂剂的组合浓度小于5E16 cm -3。

公开(公告)号：US20050082542A1

公开(公告)日：2005-04-21

申请号：US10686795

申请日：2003-10-16

申请人： Joseph Sumakeris ,  Hudson Hobgood ,  Michael Paisley ,  Jason Jenny ,  Calvin Carter ,  Valeri Tsvetkov

发明人： Joseph Sumakeris ,  Hudson Hobgood ,  Michael Paisley ,  Jason Jenny ,  Calvin Carter ,  Valeri Tsvetkov

IPC分类号： C30B29/36 ,  C30B31/20 ,  H01L21/04 ,  H01L29/24 ,  H01L29/739 ,  H01L29/78 ,  H01L29/808 ,  H01L29/861 ,  H01L29/868 ,  H01L31/0312

CPC分类号： H01L29/7813 ,  C30B29/36 ,  C30B31/20 ,  H01L21/0455 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/868

摘要： Methods of forming high voltage silicon carbide power devices utilize high purity silicon carbide drift layers that are derived from high purity silicon carbide wafer material, instead of prohibitively costly epitaxially grown silicon carbide layers. The methods include forming both minority carrier and majority carrier power devices that can support greater than 10 kV blocking voltages, using drift layers having thicknesses greater than about 100 um. The drift layers are formed as boule-grown silicon carbide drift layers having a net n-type dopant concentration therein that is less than about 2×1015 cm−3. These n-type dopant concentrations can be achieved using neutron transmutation doping (NTD) techniques.

摘要翻译： 形成高压碳化硅功率器件的方法利用从高纯度碳化硅晶片材料得到的高纯度碳化硅漂移层，而不是昂贵的外延生长碳化硅层。 这些方法包括使用厚度大于约100um的漂移层来形成可支持大于10kV阻断电压的少数载流子和多数载流子功率器件。 漂移层形成为其中具有小于约2×10 15 cm -3的净n型掺杂剂浓度的双晶生长碳化硅漂移层。 这些n型掺杂剂浓度可以使用中子转换掺杂（NTD）技术来实现。

公开(公告)号：US20060130742A1

公开(公告)日：2006-06-22

申请号：US11052679

申请日：2005-02-07

申请人： Calvin Carter ,  Jason Jenny ,  David Malta ,  Hudson Hobgood ,  Valeri Tsvetkov ,  Mrinal Das

发明人： Calvin Carter ,  Jason Jenny ,  David Malta ,  Hudson Hobgood ,  Valeri Tsvetkov ,  Mrinal Das

IPC分类号： C30B23/00 ,  C30B28/12 ,  C30B25/00

CPC分类号： C30B29/36 ,  C30B33/02

摘要： A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.

公开(公告)号：US20050022727A1

公开(公告)日：2005-02-03

申请号：US10628188

申请日：2003-07-28

申请人： George Fechko ,  Jason Jenny ,  Hudson Hobgood ,  Valeri Tsvetkov ,  Calvin Carter

发明人： George Fechko ,  Jason Jenny ,  Hudson Hobgood ,  Valeri Tsvetkov ,  Calvin Carter

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B23/005 ,  C30B23/002 ,  C30B29/36 ,  Y10S117/906

摘要： The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing silicon carbide crystal by providing an ambient atmosphere of hydrogen in the growth chamber. The hydrogen atoms, in effect, block, reduce, or otherwise hinder the incorporation of nitrogen atoms at the surface of the growing crystal.

摘要翻译： 本发明涉及控制碳化硅晶体中的氮含量，特别涉及在碳化硅升华生长期间降低氮的掺入。 本发明通过在生长室中提供氢的环境气氛来控制生长中的碳化硅晶体中的氮浓度。 实际上，氢原子阻断，降低或以其他方式妨碍氮原子在生长晶体的表面的引入。

公开(公告)号：US20060261346A1

公开(公告)日：2006-11-23

申请号：US11131880

申请日：2005-05-18

申请人： Sei-Hyung Ryu ,  Jason Jenny ,  Mrinal Das ,  Anant Agarwal ,  John Palmour ,  Hudson Hobgood

发明人： Sei-Hyung Ryu ,  Jason Jenny ,  Mrinal Das ,  Anant Agarwal ,  John Palmour ,  Hudson Hobgood

IPC分类号： H01L31/0312

CPC分类号： H01L29/74 ,  H01L21/0465 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/41716 ,  H01L29/66068 ,  H01L29/747

摘要： High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and has the second conductivity type. A second region of SiC is provided in the first SiC layer, has the first conductivity type and is adjacent to the first region of SiC. A second SiC layer having the first conductivity type is provided on a second surface of the voltage blocking SiC substrate. A third region of SiC is provided on the second SiC layer and has the second conductivity type. A fourth region of SiC is provided in the second SiC layer, has the first conductivity type and is adjacent to the third region of SiC. First and second contacts are provided on the first and third regions of SiC, respectively. Related methods of fabricating high voltage SiC devices are also provided.

公开(公告)号：US20060261345A1

公开(公告)日：2006-11-23

申请号：US11131509

申请日：2005-05-18

申请人： Sei-Hyung Ryu ,  Jason Jenny ,  Mrinal Das ,  Hudson Hobgood ,  Anant Agarwal ,  John Palmour

发明人： Sei-Hyung Ryu ,  Jason Jenny ,  Mrinal Das ,  Hudson Hobgood ,  Anant Agarwal ,  John Palmour

IPC分类号： H01L31/0312

CPC分类号： H01L29/74 ,  H01L29/0661 ,  H01L29/1608

摘要： High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and has the second conductivity type. A second region of SiC is provided in the first SiC layer. The second region of SiC has the first conductivity type and is adjacent to the first region of SiC. A second SiC layer having the first conductivity type is provided on a second surface, opposite the first surface, of the voltage blocking SiC substrate. First, second and third contacts are provided on the first region of SiC, the second region of SiC and the second SiC layer, respectively. Related methods of fabricating high voltage SiC devices are also provided.

摘要翻译： 提供高压碳化硅（SiC）器件，例如晶闸管。 具有第一导电类型的第一SiC层设置在具有第二导电类型的压电SiC衬底的第一表面上。 SiC的第一区域设置在第一SiC层上并具有第二导电类型。 SiC的第二区域设置在第一SiC层中。 SiC的第二区域具有第一导电类型并且与SiC的第一区域相邻。 具有第一导电类型的第二SiC层设置在压电SiC衬底的与第一表面相对的第二表面上。 首先，分别在SiC的第一区域，SiC的第二区域和第二SiC层上设置第二和第三触点。 还提供了制造高电压SiC器件的相关方法。