公开(公告)号：US06593165B2

公开(公告)日：2003-07-15

申请号：US10152732

申请日：2002-05-23

申请人： Takahiro Takimoto ,  Naoki Fukunaga ,  Isamu Ohkubo ,  Toshimitsu Kasamatsu ,  Mutsumi Oka ,  Masaru Kubo

发明人： Takahiro Takimoto ,  Naoki Fukunaga ,  Isamu Ohkubo ,  Toshimitsu Kasamatsu ,  Mutsumi Oka ,  Masaru Kubo

IPC分类号： H01L2100

CPC分类号： H01L27/144

摘要： A circuit-incorporating light receiving device includes an integrated circuit and a photodiode. The integrated circuit and the photodiode are provided on a single semiconductor substrate. The integrated circuit includes a transistor having a polycrystalline silicon as an emitter diffusion source and an electrode. Elements included in the integrated circuit are isolated from each other using local oxidization.

公开(公告)号：US06313484B1

公开(公告)日：2001-11-06

申请号：US09472886

申请日：1999-12-28

申请人： Isamu Ohkubo ,  Masaru Kubo ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Mutsumi Oka ,  Toshimitsu Kasamatsu

发明人： Isamu Ohkubo ,  Masaru Kubo ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Mutsumi Oka ,  Toshimitsu Kasamatsu

IPC分类号： H01L2715

CPC分类号： H01L27/1443

摘要： A circuit-integrated light-receiving device of the present invention includes: a semiconductor substrate of a first conductivity type; a first semiconductor crystal growth layer of the first conductivity type provided on a surface of the semiconductor substrate, wherein the first semiconductor crystal growth layer includes a first portion whose impurity concentration gradually decreases in a direction away from the surface of the semiconductor substrate and a second portion located in a first region above the first portion whose impurity concentration distribution is uniform in a depth direction; a buried diffusion layer of the first conductivity type located in a second region which is above the first portion of the first semiconductor crystal growth layer and does not overlap the first region; a second semiconductor crystal growth layer of a second conductivity type which is provided across a surface of the first semiconductor crystal growth layer and a surface of the buried diffusion layer; and a separation diffusion region having the first conductivity type for dividing the second semiconductor crystal growth layer into a light-receiving device section and a signal processing circuit section. The first region is located in the light-receiving device section. In the signal processing circuit section, the buried diffusion layer is in contact with the first portion of the first semiconductor crystal growth layer.

摘要翻译： 本发明的电路集成光接收装置包括：第一导电类型的半导体衬底; 设置在所述半导体衬底的表面上的第一导电类型的第一半导体晶体生长层，其中所述第一半导体晶体生长层包括其杂质浓度在远离所述半导体衬底的表面的方向上逐渐减小的第一部分，以及第二半导体晶体生长层 位于第一部分上方的第一部分的部分，其杂质浓度分布在深度方向上是均匀的; 位于第一半导体晶体生长层的第一部分之上并且不与第一区域重叠的第二区域中的第一导电类型的掩埋扩散层; 设置在第一半导体晶体生长层的表面和掩埋扩散层的表面之间的第二导电类型的第二半导体晶体生长层; 以及具有第一导电类型的分离扩散区域，用于将第二半导体晶体生长层分割成光接收装置部分和信号处理电路部分。 第一区域位于光接收装置部分中。 在信号处理电路部中，埋入扩散层与第一半导体晶体生长层的第一部分接触。

公开(公告)号：US06433366B1

公开(公告)日：2002-08-13

申请号：US09616961

申请日：2000-07-14

申请人： Takahiro Takimoto ,  Naoki Fukunaga ,  Isamu Ohkubo ,  Toshimitsu Kasamatsu ,  Mutsumi Oka ,  Masaru Kubo

发明人： Takahiro Takimoto ,  Naoki Fukunaga ,  Isamu Ohkubo ,  Toshimitsu Kasamatsu ,  Mutsumi Oka ,  Masaru Kubo

IPC分类号： H01L2714

CPC分类号： H01L27/144

摘要： A circuit-incorporating light receiving device includes an integrated circuit and a photodiode. The integrated circuit and the photodiode are provided on a single semiconductor substrate. The integrated circuit includes a transistor having a polycrystalline silicon as an emitter diffusion source and an electrode. Elements included in the integrated circuit are isolated from each other using local oxidization.

摘要翻译： 一种集成电路的光接收装置包括集成电路和光电二极管。 集成电路和光电二极管设置在单个半导体衬底上。 集成电路包括具有多晶硅作为发射极扩散源和电极的晶体管。 包含在集成电路中的元件使用局部氧化彼此隔离。

公开(公告)号：US20090325227A1

公开(公告)日：2009-12-31

申请号：US12090747

申请日：2006-10-23

申请人： Takashi Nakazawa ,  Mutsumi Oka ,  Kimiko Nishida ,  Minoru Yamaguchi ,  Hiroki Kuyama ,  Eiji Ando ,  Norikazu Ueyama ,  Takaaki Okamura ,  Susumu Tsunasawa

发明人： Takashi Nakazawa ,  Mutsumi Oka ,  Kimiko Nishida ,  Minoru Yamaguchi ,  Hiroki Kuyama ,  Eiji Ando ,  Norikazu Ueyama ,  Takaaki Okamura ,  Susumu Tsunasawa

IPC分类号： C12P21/00 ,  C07K1/107 ,  G01N33/68

CPC分类号： C07K17/00 ,  C07K1/1072 ,  C07K1/113

摘要： The present invention provides a method for inexpensively, easily and efficiently modifying the C-terminus of a protein or peptide; a method for easily and reliably isolating a C-terminal peptide fragment of a protein or peptide; and a method for rapidly, accurately and reliably determining an amino acid sequence of a protein or peptide by using a mass spectroscope. A method comprising the step of adding a formylation reagent and a catalyst to a protein or peptide to convert a carboxyl group into an aldehyde group. A method comprising the step of reacting a nucleophilic reagent with the aldehyde group to modify the C-terminus of the protein or peptide. A method comprising the step of reacting a support having a nucleophilic group to immobilize the protein or peptide. A method comprising the step of fragmenting the immobilized protein or peptide, washing the support, and isolating the C-terminal peptide fragment from the support. A method comprising the step of subjecting the isolated C-terminal peptide fragment to mass spectrometry and determining an amino acid sequence.

摘要翻译： 本发明提供了一种廉价，容易且有效地修饰蛋白质或肽的C末端的方法; 容易且可靠地分离蛋白质或肽的C末端肽片段的方法; 以及通过使用质谱仪快速，准确，可靠地测定蛋白质或肽的氨基酸序列的方法。 一种方法，其包括将甲酰化试剂和催化剂加入到蛋白质或肽中以将羧基转化为醛基的步骤。 一种包括使亲核试剂与醛基反应以修饰蛋白质或肽的C末端的步骤的方法。 一种包括使具有亲核基团的载体反应以固定蛋白质或肽的方法。 一种方法，其包括将固定的蛋白质或肽片段化，洗涤载体和从载体中分离C末端肽片段的步骤。 一种方法，包括使分离的C-末端肽片段进行质谱分析和测定氨基酸序列的步骤。