公开(公告)号：US20070075291A1

公开(公告)日：2007-04-05

申请号：US11421965

申请日：2006-06-02

Applicant: Un Paik ,  Jea Park ,  Sang Kim ,  Ye Kim ,  Myoung Suh ,  Dae Kim

Inventor： Un Paik ,  Jea Park ,  Sang Kim ,  Ye Kim ,  Myoung Suh ,  Dae Kim

IPC: C09K13/00 ,  C03C15/00 ,  H01L21/461 ,  B44C1/22 ,  C23F1/00

CPC classification number: C23F3/04 ,  C09G1/02 ,  C09K3/1463 ,  C09K3/1472 ,  H01L21/3212

Abstract: A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising the steps of: preparing polishing particles comprising organically modified silica; converting the polishing particles into an aqueous state; and adding pure water, a hydrophilic additive and a dispersing agent to the polishing particles. The polishing particles can be synthesized using a sol-gel process. According to the invention, a slurry having excellent polishing properties can be prepared, in which the surface properties of colloidal silica are changed to control the physical properties of the polishing particles and which can ensure a desired CMP removal rate while minimizing the occurrence of scratches.

Abstract translation: 提供包括抛光颗粒的CMP浆料，抛光颗粒包含有机改性的胶体二氧化硅。 另外，提供了制备CMP浆料的方法，包括以下步骤：制备包含有机改性二氧化硅的抛光颗粒; 将抛光颗粒转化成水状态; 并向抛光颗粒中加入纯水，亲水性添加剂和分散剂。 抛光颗粒可以使用溶胶 - 凝胶法合成。 根据本发明，可以制备具有优异抛光性能的浆料，其中改变胶体二氧化硅的表面性能以控制抛光颗粒的物理性质，并且可以确保所需的CMP去除速率同时最小化划痕的发生。

公开(公告)号：US20060156635A1

公开(公告)日：2006-07-20

申请号：US11305535

申请日：2005-12-16

Applicant: Dae Kim ,  Seok Hong ,  Yong Kim ,  Dong Kim ,  Myoung Suh ,  Jea Park ,  Un Paik

Inventor： Dae Kim ,  Seok Hong ,  Yong Kim ,  Dong Kim ,  Myoung Suh ,  Jea Park ,  Un Paik

IPC: C09K3/14

CPC classification number: C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

Abstract: Disclosed herein is a polishing slurry for use in an STI CMP process, necessary for fabricating ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less), which can polish wafers at a high removal rate, having an excellent the removal selectivity of oxide compared to nitride. The polishing slurry can be applied to various patterns required in the course of producing ultra highly integrated semiconductors, and thus excellent removal rate, removal selectivity, and within-wafer-nonuniformity (WIWNU), which indicates removal uniformity, as well as minimal occurrence of micro scratches, can be assured.

Abstract translation: 本文公开了一种用于STI CMP工艺的抛光浆料，其是制造256兆D-RAM以上的超高度集成半导体（设计规则为0.13μm或更小）所必需的，其可以以高去除速度抛光晶片，具有 与氮化物相比，氧化物的去除选择性优异。 研磨浆料可以应用于制造超高度集成半导体的过程中所需的各种图案，因此优异的去除速度，去除选择性和晶片内不均匀性（WIWNU），这表明去除均匀性，以及最小的发生 微划痕，可以放心。