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1.发明申请CMP Slurry, Preparation Method Thereof and Method of Polishing Substrate Using the Same 有权CMP浆料，其制备方法和使用其的抛光基材的方法公开(公告)号：US20070075291A1
公开(公告)日：2007-04-05
申请号：US11421965
申请日：2006-06-02
IPC分类号： C09K13/00 , C03C15/00 , H01L21/461 , B44C1/22 , C23F1/00
CPC分类号： C23F3/04 , C09G1/02 , C09K3/1463 , C09K3/1472 , H01L21/3212
摘要： A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising the steps of: preparing polishing particles comprising organically modified silica; converting the polishing particles into an aqueous state; and adding pure water, a hydrophilic additive and a dispersing agent to the polishing particles. The polishing particles can be synthesized using a sol-gel process. According to the invention, a slurry having excellent polishing properties can be prepared, in which the surface properties of colloidal silica are changed to control the physical properties of the polishing particles and which can ensure a desired CMP removal rate while minimizing the occurrence of scratches.
摘要翻译： 提供包括抛光颗粒的CMP浆料，抛光颗粒包含有机改性的胶体二氧化硅。 另外，提供了制备CMP浆料的方法，包括以下步骤：制备包含有机改性二氧化硅的抛光颗粒; 将抛光颗粒转化成水状态; 并向抛光颗粒中加入纯水，亲水性添加剂和分散剂。 抛光颗粒可以使用溶胶 - 凝胶法合成。 根据本发明，可以制备具有优异抛光性能的浆料，其中改变胶体二氧化硅的表面性能以控制抛光颗粒的物理性质，并且可以确保所需的CMP去除速率同时最小化划痕的发生。
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公开(公告)号：US20060156635A1
公开(公告)日：2006-07-20
申请号：US11305535
申请日：2005-12-16
IPC分类号： C09K3/14
CPC分类号： C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： Disclosed herein is a polishing slurry for use in an STI CMP process, necessary for fabricating ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less), which can polish wafers at a high removal rate, having an excellent the removal selectivity of oxide compared to nitride. The polishing slurry can be applied to various patterns required in the course of producing ultra highly integrated semiconductors, and thus excellent removal rate, removal selectivity, and within-wafer-nonuniformity (WIWNU), which indicates removal uniformity, as well as minimal occurrence of micro scratches, can be assured.
摘要翻译： 本文公开了一种用于STI CMP工艺的抛光浆料，其是制造256兆D-RAM以上的超高度集成半导体（设计规则为0.13μm或更小）所必需的，其可以以高去除速度抛光晶片，具有 与氮化物相比，氧化物的去除选择性优异。 研磨浆料可以应用于制造超高度集成半导体的过程中所需的各种图案，因此优异的去除速度，去除选择性和晶片内不均匀性（WIWNU），这表明去除均匀性，以及最小的发生 微划痕，可以放心。
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3.发明申请Polishing slurry, method of producing same, and method of polishing substrate 审中-公开抛光浆料，其制造方法以及抛光底物的方法公开(公告)号：US20060032149A1
公开(公告)日：2006-02-16
申请号：US11193094
申请日：2005-07-28
CPC分类号： B82Y30/00 , C01F17/0043 , C01P2004/52 , C01P2004/64 , C01P2006/12 , C01P2006/22 , C09G1/02 , C09K3/1463
摘要： Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.
摘要翻译： 公开了一种抛光浆料，特别是用于化学机械抛光的浆料，其用于化学机械抛光工艺以使半导体层压体变平。 更具体地说，本发明提供一种制备浆料的方法，该方法对于在制造256兆D-RAM或更高的超高度集成半导体所需的浅沟槽隔离CMP工艺中，对用作阻挡膜的氮化物层具有高的去除选择性（ 设计规则为0.13μm以下），并且减少了在平坦化表面上的划痕的发生，以及使用其抛光衬底的方法。
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4.发明申请Slurry composition for chemical mechanical polishing, method for planarization of surface of semiconductor element using the same, and method for controlling selection ratio of slurry composition 审中-公开用于化学机械抛光的浆料组合物，使用其的半导体元件的表面的平面化方法以及用于控制浆料组成的选择比的方法公开(公告)号：US20060246723A1
公开(公告)日：2006-11-02
申请号：US10540992
申请日：2003-12-25
申请人： Jea Park , Un Paik , Jin Park , Takeo Katoh
发明人： Jea Park , Un Paik , Jin Park , Takeo Katoh
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/31053 , C09G1/02
摘要： A method for controlling a selection ratio of a chemical-mechanical-polishing slurry composition for polishing and ablating an oxide layer selectively in relation to a nitride layer, the method includes: a step of confirming a polishing-rate selection ratio of an oxide layer to a nitride layer of a chemical-mechanical-polishing slurry composition which includes ceria polishing particles, a dispersing agent, and an anionic additive, while a concentration of the anionic additive is changed; and a step of adjusting the concentration of the anionic additive to attain a desired selection ratio of the slurry composition, on the basis of the confirmed polishing-rate selection ratio, thereby controlling the selection ratio of the slurry composition.
摘要翻译： 一种用于控制用于相对于氮化物层选择性地研磨和消融氧化物层的化学机械抛光浆料组合物的选择比率的方法，所述方法包括：将氧化物层的研磨速率选择比确定为 化学机械抛光浆料组合物的氮化物层，其中阴离子添加剂的浓度改变，其包括二氧化铈抛光颗粒，分散剂和阴离子添加剂; 以及基于确定的研磨速度选择比，调整阴离子添加剂的浓度以达到浆料组合物的期望选择比例的步骤，从而控制浆料组合物的选择比。
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公开(公告)号：US20050252092A1
公开(公告)日：2005-11-17
申请号：US11127441
申请日：2005-05-11
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： Disclosed herein is a polishing slurry and a method of producing the same. The polishing slurry has high selectivity in terms of a polishing speed of an oxide layer to that of a nitride layer used in CMP of an STI process which is essential to produce ultra highly integrated semiconductors having a design rule of 256 mega D-RAM or more, for example, a design rule of 0.13 μm or less. A method and a device for pre-treating polishing particles, a dispersing device and a method of operating the dispersing device, a method of adding a chemical additive and an amount added, and a device for transferring samples are properly employed to produce a high performance nano ceria slurry essential to CMP for a process of producing ultra highly integrated semiconductors of 0.13 μm or less, particularly, the STI process.
摘要翻译： 本文公开了抛光浆料及其制备方法。 抛光浆料在氧化物层的研磨速度与STI工艺的CMP中使用的氮化物层的研磨速度方面具有高选择性，该制造方法对于制造具有256兆D-RAM以上的设计规则的超高度集成半导体是必不可少的 ，例如，0.13mum以下的设计规则。 用于预处理抛光颗粒的方法和装置，分散装置和操作分散装置的方法，添加化学添加剂和添加量的方法以及用于转移样品的装置被适当地用于产生高性能 纳米二氧化铈浆料对于生产0.13毫米或更小的超高度集成半导体的工艺，特别是STI工艺。
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6.发明申请Polishing slurry, method of producing same, and method of polishing substrate 有权抛光浆料，其制造方法以及抛光底物的方法公开(公告)号：US20050198912A1
公开(公告)日：2005-09-15
申请号：US11078538
申请日：2005-03-11
IPC分类号： B24D3/02 , C08J3/14 , H01L21/304
CPC分类号： B24B37/044 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： Disclosed herein is a polishing slurry for chemical mechanical polishing. The polishing slurry comprises polishing particles, which have a particle size distribution including separated fine and large polishing particle peaks. The polishing slurry also comprises polishing particles, which have a median size of 50-150 nm. The present invention provides the slurry having an optimum polishing particle size, in which the polishing particle size is controlled and which is useful to produce semiconductors having fine design rules by changing the production conditions of the slurry. The present invention also provides the polishing slurry and a method of producing the same, in which a desirable CMP removal rate is assured and scratches are suppressed by controlling a polishing particle size distribution, and a method of polishing a substrate.
摘要翻译： 本文公开了用于化学机械抛光的抛光浆料。 抛光浆料包括抛光颗粒，其具有包括分离的精细和大的抛光颗粒峰的粒度分布。 抛光浆料还包括中值粒径为50-150nm的抛光颗粒。 本发明提供了具有最佳抛光粒度的浆料，其中抛光粒度被控制，并且通过改变浆料的生产条件，可用于制备具有精细设计规则的半导体。 本发明还提供了研磨浆料及其制造方法，其中通过控制抛光粒度分布来确保理想的CMP去除速率和抑制刮痕，以及抛光基材的方法。
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