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    Address mapping method and mapping information managing method for flash memory, and flash memory using the same
    2.
    发明授权
    Address mapping method and mapping information managing method for flash memory, and flash memory using the same 有权
    闪存的地址映射方法和映射信息管理方法，以及使用其的闪存

    公开(公告)号：US07702844B2

    公开(公告)日：2010-04-20

    申请号：US11018673

    申请日：2004-12-22

    申请人： Tae-sun Chung ,  Ji-hyun In ,  Myung-jin Jung

    发明人： Tae-sun Chung ,  Ji-hyun In ,  Myung-jin Jung

    IPC分类号： G06F12/00

    CPC分类号： G06F12/0246 ,  G06F17/30218

    摘要： A method for minimizing the degradation of performance upon accessing a flash memory using a logical-physical mapping scheme, and a method for efficiently storing and managing information on logical-physical mapping in a flash memory. A method for writing data in a flash memory includes determining whether a sector is empty in a physical page having a most recently written logical page number of data to be written, the offset of the sector matching that of the data to be written; if the sector is empty, writing the data in the sector to the physical page; and if the sector is not empty, selecting an empty physical page to write the data to a sector in the selected empty physical page of which the offset matches that of the data to be written and writing a logical page number for the data to the selected empty physical page.

    摘要翻译： 一种在使用逻辑 - 物理映射方案访问快闪存储器时最小化性能劣化的方法，以及用于在快闪存储器中有效地存储和管理关于逻辑 - 物理映射的信息的方法。 一种在闪速存储器中写入数据的方法包括：确定具有最新写入的要写入的数据的逻辑页数的物理页中扇区是否为空，扇区的偏移量与要写入的数据的偏移量; 如果扇区为空，将扇区中的数据写入物理页面; 并且如果扇区不为空，则选择空的物理页将数据写入所选择的空物理页中的扇区，其偏移量与要写入的数据的空白物理页匹配，并将数据的逻辑页号写入所选择的 空的物理页面。

    Semiconductor device and method for manufacturing the same
    4.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07300846B2

    公开(公告)日：2007-11-27

    申请号：US11293614

    申请日：2005-12-02

    申请人： Myung Jin Jung

    发明人： Myung Jin Jung

    IPC分类号： H01L21/226

    CPC分类号： H01L29/0847 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/1054 ,  H01L29/66575 ,  H01L29/78 ,  Y10S438/938

    摘要： A semiconductor device and a method for manufacturing the same are disclosed, in which an insulating layer may be formed in a strained silicon layer under source/drain regions to substantially overcome conventional problems resulting from a channel decrease in the semiconductor device. A method for manufacturing the semiconductor device may include growing a germanium layer on a first silicon layer; forming at least two trenches in the germanium layer; forming an insulating layer in the germanium layer including the trenches; forming at least two gate insulating layer patterns by polishing the germanium layer and the insulating layer to coplanarity in the bottom of the trenches; re-growing and planarizing the germanium layer; forming a second silicon layer on the germanium layer; forming a gate insulating layer and a gate electrode on the second silicon layer between the at least two insulating layers; and forming source/drain regions by implanting impurity ions into the second silicon layer at sides of the gate electrode.

    摘要翻译： 公开了半导体器件及其制造方法，其中可以在源极/漏极区域处的应变硅层中形成绝缘层，以基本上克服由半导体器件中的沟道减小引起的常规问题。 半导体器件的制造方法可以包括在第一硅层上生长锗层; 在锗层中形成至少两个沟槽; 在包括沟槽的锗层中形成绝缘层; 通过将锗层和绝缘层抛光到沟槽底部的共面度来形成至少两个栅极绝缘层图案; 重新生长和平坦化锗层; 在锗层上形成第二硅层; 在所述至少两个绝缘层之间的所述第二硅层上形成栅极绝缘层和栅电极; 以及通过在栅电极的侧面将杂质离子注入第二硅层来形成源/漏区。

    SEMICONDUCTOR DEVICES AND MANUFACTURING METHODS OF THE SAME
    5.
    发明申请
    SEMICONDUCTOR DEVICES AND MANUFACTURING METHODS OF THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20070087510A1

    公开(公告)日：2007-04-19

    申请号：US11548480

    申请日：2006-10-11

    申请人： Myung Jin Jung

    发明人： Myung Jin Jung

    IPC分类号： H01L21/336

    CPC分类号： H01L29/66772 ,  H01L21/30625 ,  H01L21/76264 ,  H01L29/0649 ,  H01L29/1054 ,  H01L29/6659 ,  H01L29/66651 ,  H01L29/78687

    摘要： A semiconductor device may include first and second silicon layers formed over a semiconductor substrate. An insulating layer may be formed between first and second silicon layers. A gate insulating layer, a gate electrode, and a spacer may be formed over a second silicon layer. A source/drain impurity area may be formed over a second silicon layer on both sides of a gate electrode.

    摘要翻译： 半导体器件可以包括形成在半导体衬底上的第一和第二硅层。 可以在第一和第二硅层之间形成绝缘层。 可以在第二硅层上形成栅极绝缘层，栅电极和间隔物。 源极/漏极杂质区域可以形成在栅电极的两侧上的第二硅层上。

    Semiconductor device and method of fabricating thereof capable of reducing a shallow trench isolation stress influence by utilizing layout pattern designs
    8.
    发明授权
    Semiconductor device and method of fabricating thereof capable of reducing a shallow trench isolation stress influence by utilizing layout pattern designs 有权
    半导体器件及其制造方法能够通过利用布局图案设计来减小浅沟槽隔离应力的影响

    公开(公告)号：US07683401B2

    公开(公告)日：2010-03-23

    申请号：US11519361

    申请日：2006-09-12

    申请人： Myung Jin Jung

    发明人： Myung Jin Jung

    IPC分类号： H01L27/088

    CPC分类号： H01L29/0692 ,  H01L27/0207

    摘要： Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate, a plurality of contact metals, and a gate electrode. The semiconductor substrate has an active region and a dummy active region, and a plurality of contact metals are formed in the active region. A gate electrode is located between the contact metals in the active region. A first distance between the active region and the dummy active region, and a second distance between an edge of the contact metal and an edge of the active region are set such that a channel characteristic of the active region is improved.

    摘要翻译： 提供一种半导体器件。 半导体器件包括半导体衬底，多个接触金属和栅电极。 半导体衬底具有有源区和伪有源区，并且在有源区中形成多个接触金属。 栅电极位于有源区域中的接触金属之间。 激活区域和虚拟有源区域之间的第一距离以及接触金属的边缘与有源区域的边缘之间的第二距离被设定为使得有源区域的沟道特性得到改善。

    System and method for extracting corner point in space using pixel information, and robot using the system
    9.
    发明授权
    System and method for extracting corner point in space using pixel information, and robot using the system 有权
    使用像素信息提取空间角点的系统和方法，以及使用该系统的机器人

    公开(公告)号：US07653247B2

    公开(公告)日：2010-01-26

    申请号：US11237660

    申请日：2005-09-29

    申请人： Myung-Jin Jung ,  Dong-Ryeol Park ,  Seok-Won Bang ,  Hyoung-Ki Lee

    发明人： Myung-Jin Jung ,  Dong-Ryeol Park ,  Seok-Won Bang ,  Hyoung-Ki Lee

    IPC分类号： G06K9/46 ,  G06K9/00 ,  G06F19/00

    CPC分类号： G06K9/00201 ,  G06T7/11 ,  G06T2207/10028 ,  G06T2207/20164 ,  G06T2207/30204 ,  G06T2207/30248

    摘要： A system and method for extracting a corner point in a space using pixel information obtained from a camera are provided. The corner point extracting system includes a light generation module emitting light in a predetermined form (such as a plane form), an image acquisition module acquiring an image of a reflector reflecting the light emitted from the light generation module, and a control module obtaining distance data between the light generation module and the reflector using the acquired image and extracting a corner point by performing split-merge using a threshold proportional to the distance data. The threshold is a value proportional to the distance data which corresponds to pixel information of the image acquisition module.

    摘要翻译： 提供了一种使用从相机获得的像素信息来提取空间中的角点的系统和方法。 角点提取系统包括以预定形式（例如平面形式）发光的光生成模块，获取反射从光生成模块发射的光的反射镜的图像的图像获取模块，以及获取距离 使用所获取的图像在光生成模块和反射器之间的数据，并且通过使用与距离数据成比例的阈值执行分割合并来提取角点。 阈值是与对应于图像获取模块的像素信息的距离数据成比例的值。

    Flash memory and mapping control apparatus and method for flash memory
    10.
    发明申请
    Flash memory and mapping control apparatus and method for flash memory 有权
    闪存和闪存映射控制装置和方法

    公开(公告)号：US20050132127A1

    公开(公告)日：2005-06-16

    申请号：US10893344

    申请日：2004-07-19

    申请人： Tae-sun Chung ,  Hyung-seok Park ,  Myung-jin Jung

    发明人： Tae-sun Chung ,  Hyung-seok Park ,  Myung-jin Jung

    IPC分类号： G06F12/16 ,  G06F12/00 ,  G06F12/02 ,  G06F12/08

    CPC分类号： G06F12/0246

    摘要： A mapping algorithm for efficient access to a flash memory, wherein block state information that is changed through logical operations required by a processor is written in the flash memory according to a predetermined state transition algorithm and the changed information is referred to upon read/write operations. A mapping control apparatus for a flash memory according to the present invention includes a flash memory having regions divided on a block basis and containing block state information indicating the state of each block, each block including a predetermined number of sectors; and a processor for determining a sector on which a predetermined logical operation is to be performed based on the block state information and updating the block state information according to a predetermined state transition algorithm, when the logical operation is required for the flash memory.

    摘要翻译： 用于有效地访问闪速存储器的映射算法，其中根据预定的状态转换算法将由处理器所需的逻辑操作改变的块状态信息写入闪速存储器，并且在读/写操作中参考改变的信息 。 根据本发明的用于闪速存储器的映射控制装置包括闪存，其具有以块为基础划分的区域，并且包含指示每个块的状态的块状态信息，每个块包括预定数量的扇区; 以及处理器，用于当闪速存储器需要逻辑运算时，根据块状态信息确定要执行预定逻辑运算的扇区，并根据预定状态转换算法更新块状态信息。