公开(公告)号：US07675765B2

公开(公告)日：2010-03-09

申请号：US11267781

申请日：2005-11-03

Applicant: Narbeh Derharcobian ,  Colin Neal Murphy

Inventor： Narbeh Derharcobian ,  Colin Neal Murphy

IPC: G11C15/04

CPC classification number: G11C11/5678 ,  G11C13/0004 ,  G11C15/046

Abstract: Content-addressable memory (CAM) cells comprised of phase change material devices (PCMDs), including PCMD-based binary CAM cells (PCMD-based BCAM cells), PCMD-based ternary CAM cells (PCMD-based TCAM cells), and PCMD-based universal CAM cells (PCMD-based UCAM cells). The PCMDs of the various PCMD-based CAM cells are configured and programmed in a manner that allows a logic “0” or a logic “1” to be stored by the CAM cell. The logic value stored by a given PCMD-based CAM cell depends on the program states of the PCMDs. A program state of a PCMD is determined by whether the phase change material of the PCMD has been allowed to solidify to a crystalline, low-resistance state during a programming operation, or whether the phase change material of the PCMD is forced to solidify to an amorphous, high-resistance state during the programming operation.

Abstract translation: 由包括基于PCMD的二进制CAM单元（基于PCMD的BCAM单元），基于PCMD的三元CAM单元（基于PCMD的TCAM单元）和PCMD-based三元CAM单元组成的包括相变材料装置（PCMD）的内容寻址存储器（CAM） 基于通用的CAM单元（基于PCMD的UCAM单元）。 各种基于PCMD的CAM单元的PCMD以允许CAM单元存储逻辑“0”或逻辑“1”的方式进行配置和编程。 由给定基于PCMD的CAM单元存储的逻辑值取决于PCMD的程序状态。 PCMD的编程状态由PCMD的相变材料是否已被允许在编程操作期间凝固成晶体，低电阻状态，或者PCMD的相变材料是否被迫固化为 非线性，高电阻状态。

公开(公告)号：US07696018B2

公开(公告)日：2010-04-13

申请号：US12116911

申请日：2008-05-07

Applicant: Antonietta Oliva ,  Louis Charles Kordus, II ,  Narbeh Derharcobian ,  Vei-Han Chan ,  Thomas E. Stewart, Jr.

Inventor： Antonietta Oliva ,  Louis Charles Kordus, II ,  Narbeh Derharcobian ,  Vei-Han Chan ,  Thomas E. Stewart, Jr.

IPC: H01L21/06 ,  H01L45/00

CPC classification number: H01L45/1683 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1226 ,  H01L45/126

Abstract: Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. This structure allows an application in which an electrical connection can be created between the two active terminals, with the control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals. This allows the use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device. The programming control can be placed outside of the main signal path through the phase change device, reducing the impact of the associated capacitance and resistance of the device.

Abstract translation: 相变装置，特别是多端子相变装置，包括通过相变材料桥接在一起的第一和第二有源端子，该相变材料的导电性可以根据施加到控制电极的控制信号进行修改。 这种结构允许在两个有效端子之间可以产生电连接的应用，连接的控制使用单独的终端或终端实现。 因此，可以独立于两个有源端子之间的路径的电阻来增加加热器元件的电阻。 这允许使用较小的加热器元件，因此需要较少的电流以在每单位面积上产生相同量的焦耳加热。 加热元件的电阻不影响相变装置的总电阻。 编程控制可以通过相变装置放置在主信号路径之外，减少相关电容和器件电阻的影响。

公开(公告)号：US20100091560A1

公开(公告)日：2010-04-15

申请号：US12459917

申请日：2009-07-09

Applicant: Louis Charles Kordus, II ,  Antonietta Oliva ,  Narbeh Derharcobian ,  Vei-Han Chan

Inventor： Louis Charles Kordus, II ,  Antonietta Oliva ,  Narbeh Derharcobian ,  Vei-Han Chan

IPC: G11C11/56

CPC classification number: H01L45/1226 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/126 ,  H01L45/1683 ,  H03K19/02

Abstract: Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. This structure allows an application in which an electrical connection can be created between the two active terminals, with the control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals. This allows the use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device. The programming control can be placed outside of the main signal path through the phase change device, reducing the impact of the associated capacitance and resistance of the device.

Abstract translation: 相变装置，特别是多端子相变装置，包括通过相变材料桥接在一起的第一和第二有源端子，该相变材料的导电性可以根据施加到控制电极的控制信号进行修改。 这种结构允许在两个有效端子之间可以产生电连接的应用，连接的控制使用单独的终端或终端实现。 因此，可以独立于两个有源端子之间的路径的电阻来增加加热器元件的电阻。 这允许使用较小的加热器元件，因此需要较少的电流以在每单位面积上产生相同量的焦耳加热。 加热元件的电阻不影响相变装置的总电阻。 编程控制可以通过相变装置放置在主信号路径之外，减少相关电容和器件电阻的影响。

公开(公告)号：US07494849B2

公开(公告)日：2009-02-24

申请号：US11267789

申请日：2005-11-03

Applicant: Antonietta Oliva ,  Louis Charles Kordus, II ,  Narbeh Derharcobian ,  Vei-Han Chan ,  Thomas E. Stewart, Jr.

Inventor： Antonietta Oliva ,  Louis Charles Kordus, II ,  Narbeh Derharcobian ,  Vei-Han Chan ,  Thomas E. Stewart, Jr.

IPC: H01L21/06 ,  H01L45/00

CPC classification number: H01L45/1683 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1226 ,  H01L45/126

Abstract: Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. This structure allows an application in which an electrical connection can be created between the two active terminals, with the control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals. This allows the use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device. The programming control can be placed outside of the main signal path through the phase change device, reducing the impact of the associated capacitance and resistance of the device.

Abstract translation: 相变装置，特别是多端子相变装置，包括通过相变材料桥接在一起的第一和第二有源端子，其中导电性可以根据施加到控制电极的控制信号进行修改。 这种结构允许在两个有效端子之间可以产生电连接的应用，连接的控制使用单独的终端或终端实现。 因此，可以独立于两个有源端子之间的路径的电阻来增加加热器元件的电阻。 这允许使用较小的加热器元件，因此需要较少的电流以在每单位面积上产生相同量的焦耳加热。 加热元件的电阻不影响相变装置的总电阻。 编程控制可以通过相变装置放置在主信号路径之外，减少相关电容和器件电阻的影响。

公开(公告)号：US08486745B2

公开(公告)日：2013-07-16

申请号：US11811077

申请日：2007-06-07

Applicant: Louis Charles Kordus, II ,  Antonietta Oliva ,  Narbeh Derharcobian ,  Vei-Han Chan

Inventor： Louis Charles Kordus, II ,  Antonietta Oliva ,  Narbeh Derharcobian ,  Vei-Han Chan

IPC: H01L45/00

CPC classification number: H01L45/1226 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/126 ,  H01L45/1683 ,  H03K19/02

Abstract: Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. This structure allows an application in which an electrical connection can be created between the two active terminals, with the control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals. This allows the use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device. The programming control can be placed outside of the main signal path through the phase change device, reducing the impact of the associated capacitance and resistance of the device.

Abstract translation: 相变装置，特别是多端子相变装置，包括通过相变材料桥接在一起的第一和第二有源端子，其中导电性可以根据施加到控制电极的控制信号进行修改。 这种结构允许在两个有效端子之间可以产生电连接的应用，连接的控制使用单独的终端或终端实现。 因此，可以独立于两个有源端子之间的路径的电阻来增加加热器元件的电阻。 这允许使用较小的加热器元件，因此需要较少的电流以在每单位面积上产生相同量的焦耳加热。 加热元件的电阻不影响相变装置的总电阻。 编程控制可以通过相变装置放置在主信号路径之外，减少相关电容和器件电阻的影响。

公开(公告)号：US08178380B2

公开(公告)日：2012-05-15

申请号：US12459917

申请日：2009-07-09

Applicant: Louis Charles Kordus, II ,  Antonietta Oliva ,  Narbeh Derharcobian ,  Vei-Han Chan

Inventor： Louis Charles Kordus, II ,  Antonietta Oliva ,  Narbeh Derharcobian ,  Vei-Han Chan

IPC: H01L45/00

CPC classification number: H01L45/1226 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/126 ,  H01L45/1683 ,  H03K19/02

Abstract: Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. This structure allows an application in which an electrical connection can be created between the two active terminals, with the control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals. This allows the use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device. The programming control can be placed outside of the main signal path through the phase change device, reducing the impact of the associated capacitance and resistance of the device.

Abstract translation: 相变装置，特别是多端子相变装置，包括通过相变材料桥接在一起的第一和第二有源端子，其中导电性可以根据施加到控制电极的控制信号进行修改。 这种结构允许在两个有效端子之间可以产生电连接的应用，连接的控制使用单独的终端或终端实现。 因此，可以独立于两个有源端子之间的路径的电阻来增加加热器元件的电阻。 这允许使用较小的加热器元件，因此需要较少的电流以在每单位面积上产生相同量的焦耳加热。 加热元件的电阻不影响相变装置的总电阻。 编程控制可以通过相变装置放置在主信号路径之外，减少相关电容和器件电阻的影响。

公开(公告)号：US07511532B2

公开(公告)日：2009-03-31

申请号：US11267718

申请日：2005-11-03

Applicant: Narbeh Derharcobian ,  Louis Charles Kordus, II ,  Colin Neal Murphy ,  Antonietta Oliva ,  Vei-Han Chan ,  Thomas Stewart, Jr.

Inventor： Narbeh Derharcobian ,  Louis Charles Kordus, II ,  Colin Neal Murphy ,  Antonietta Oliva ,  Vei-Han Chan ,  Thomas Stewart, Jr.

IPC: H03K19/177 ,  G11C11/34

CPC classification number: G11C13/0011 ,  B82Y10/00 ,  G11C13/0004 ,  G11C13/025 ,  G11C23/00 ,  H03K19/17736 ,  H03K19/17748 ,  H03K19/1778

Abstract: Reconfigurable electronic structures and circuits using programmable, non-volatile memory elements. The programmable, non-volatile memory elements may perform the functions of storage and/or a switch to produce components such as crossbars, multiplexers, look-up tables (LUTs) and other logic circuits used in programmable logic structures (e.g., (FPGAs)). The programmable, non-volatile memory elements comprise one or more structures based on Phase Change Memory, Programmable Metallization, Carbon Nano-Electromechanical (CNT-NEM), or Metal Nano-Electromechanical device technologies.

Abstract translation: 可重构的电子结构和电路使用可编程的非易失性存储元件。 可编程的非易失性存储器元件可以执行存储和/或开关的功能，以产生诸如交叉开关，多路复用器，查找表（LUT）和在可编程逻辑结构（例如，（FPGA））中使用的其它逻辑电路的组件， ）。 可编程的非易失性存储元件包括基于相变存储器，可编程金属化，碳纳米机电（CNT-NEM）或金属纳米机电器件技术的一个或多个结构。