公开(公告)号：US08900973B2

公开(公告)日：2014-12-02

申请号：US13221198

申请日：2011-08-30

申请人： Nathaniel C. Berliner ,  Pranita Kulkarni ,  Nicolas Loubet ,  Kingsuk Maitra ,  Sanjay C. Mehta ,  Paul A. Ronsheim ,  Toyoji Yamamoto ,  Zhengmao Zhu

发明人： Nathaniel C. Berliner ,  Pranita Kulkarni ,  Nicolas Loubet ,  Kingsuk Maitra ,  Sanjay C. Mehta ,  Paul A. Ronsheim ,  Toyoji Yamamoto ,  Zhengmao Zhu

IPC分类号： H01L21/326 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78

CPC分类号： H01L21/845 ,  H01L27/1211 ,  H01L29/7848

摘要： A method of making a semiconductor device patterns a first fin in a pFET region, and patterns a second fin in an nFET region. A plurality of conformal microlayers containing a straining material are deposited on the first and second fins. A protective cap material is formed on the first fin, and the conformal layers are selectively removed from the second fin. The straining material is then thermally diffused into the first fin. The protective cap material is removed from the first fin after the thermal annealing and after the conformal micro layers are selectively removed from the second fin.

摘要翻译： 制造半导体器件的方法在pFET区域中形成第一鳍，并且在nFET区域中形成第二鳍。 包含应变材料的多个保形微层沉积在第一和第二鳍片上。 在第一翅片上形成保护盖材料，并且从第二翅片选择性地去除保形层。 然后将应变材料热扩散到第一鳍中。 在热退火之后以及在从第二散热片选择性地去除保形微层之后，从第一散热片上去除保护帽材料。

公开(公告)号：US09018024B2

公开(公告)日：2015-04-28

申请号：US12603668

申请日：2009-10-22

申请人： Nathaniel C. Berliner ,  Kangguo Cheng ,  Jason E. Cummings ,  Toshiharu Furukawa ,  Jed H. Rankin ,  Robert R. Robison ,  William R. Tonti

发明人： Nathaniel C. Berliner ,  Kangguo Cheng ,  Jason E. Cummings ,  Toshiharu Furukawa ,  Jed H. Rankin ,  Robert R. Robison ,  William R. Tonti

IPC分类号： H01L21/66 ,  H01L21/762 ,  H01L21/306

CPC分类号： H01L21/7624 ,  H01L21/30625 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  Y10S438/959 ,  H01L2924/00

摘要： An extremely thin semiconductor-on-insulator (ETSOI) wafer is created having a substantially uniform thickness by measuring a semiconductor layer thickness at a plurality of selected points on a wafer; determining a removal thickness to be removed at each of the plurality of selected points such that removal of the removal thickness results in a substantially uniform within-wafer semiconductor layer thickness; implanting a species into the wafer at each of the plurality of selected points with at least one of a dose level and an energy level based on the removal thickness for the respective point; and polishing the semiconductor layer to thin the semiconductor layer.

摘要翻译： 通过测量晶片上的多个选定点处的半导体层厚度，制造出具有基本上均匀的厚度的极薄的绝缘体上半导体（ETSOI）晶片; 确定在所述多个选择点中的每一个处要除去的去除厚度，使得所述去除厚度的去除导致基本上均匀的晶片内半导体层厚度; 基于各个点的去除厚度，以剂量水平和能量水平中的至少一个将多个选择点中的每一个植入种子到晶片; 并抛光半导体层以使半导体层变薄。

公开(公告)号：US08940554B2

公开(公告)日：2015-01-27

申请号：US13359970

申请日：2012-01-27

申请人： Nathaniel C. Berliner ,  Kangguo Cheng ,  Toshiharu Furukawa ,  Douglas C. La Tulipe, Jr. ,  William R. Tonti

发明人： Nathaniel C. Berliner ,  Kangguo Cheng ,  Toshiharu Furukawa ,  Douglas C. La Tulipe, Jr. ,  William R. Tonti

IPC分类号： H01L21/306 ,  H01L21/66 ,  H01L21/302 ,  H01L21/762

CPC分类号： H01L22/20 ,  H01L21/302 ,  H01L21/30604 ,  H01L21/76254 ,  H01L22/12

摘要： A method for creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness includes: measuring a thickness of a semiconductor-on-insulator (SOI) layer at a plurality of locations; determining a removal thickness at each of the plurality of locations; and implanting ions at the plurality of locations. The implanting is dynamically based on the removal thickness at each of the plurality of locations. The method further includes oxidizing the SOI layer to form an oxide layer, and removing the oxide layer.

摘要翻译： 一种制造具有均匀厚度的非常薄的绝缘上绝缘体（ETSOI）层的方法包括：测量多个位置上绝缘体上半导体（SOI）层的厚度; 确定所述多个位置中的每一个处的去除厚度; 以及在所述多个位置处注入离子。 基于多个位置中的每个位置处的去除厚度动态地进行植入。 该方法还包括氧化SOI层以形成氧化物层，并除去氧化物层。

公开(公告)号：US20130052801A1

公开(公告)日：2013-02-28

申请号：US13221198

申请日：2011-08-30

申请人： Nathaniel C. Berliner ,  Pranita Kulkarni ,  Nicolas Loubet ,  Kingsuk Maitra ,  Sanjay C. Mehta ,  Paul A. Ronsheim ,  Toyoji Yamamoto ,  Zhengmao Zhu

发明人： Nathaniel C. Berliner ,  Pranita Kulkarni ,  Nicolas Loubet ,  Kingsuk Maitra ,  Sanjay C. Mehta ,  Paul A. Ronsheim ,  Toyoji Yamamoto ,  Zhengmao Zhu

IPC分类号： H01L21/326

CPC分类号： H01L21/845 ,  H01L27/1211 ,  H01L29/7848

摘要： A method of making a semiconductor device patterns a first fin in a pFET region, and patterns a second fin in an nFET region. A plurality of conformal microlayers containing a straining material are deposited on the first and second fins. A protective cap material is formed on the first fin, and the conformal layers are selectively removed from the second fin. The straining material is then thermally diffused into the first fin. The protective cap material is removed from the first fin after the thermal annealing and after the conformal micro layers are selectively removed from the second fin.

摘要翻译： 制造半导体器件的方法在pFET区域中形成第一鳍，并且在nFET区域中形成第二鳍。 包含应变材料的多个保形微层沉积在第一和第二鳍片上。 在第一翅片上形成保护盖材料，并且从第二翅片选择性地去除保形层。 然后将应变材料热扩散到第一鳍中。 在热退火之后以及在从第二散热片选择性地去除保形微层之后，从第一散热片上去除保护帽材料。

公开(公告)号：US20110097824A1

公开(公告)日：2011-04-28

申请号：US12603671

申请日：2009-10-22

申请人： Nathaniel C. BERLINER ,  Kangguo CHENG ,  Toshiharu FURUKAWA ,  William R. TONTI ,  Douglas C. La TULIPE, Jr.

发明人： Nathaniel C. BERLINER ,  Kangguo CHENG ,  Toshiharu FURUKAWA ,  William R. TONTI ,  Douglas C. La TULIPE, Jr.

IPC分类号： H01L21/302 ,  C23F1/08 ,  H01L21/66

CPC分类号： H01L22/20 ,  H01L21/302 ,  H01L21/30604 ,  H01L21/76254 ,  H01L22/12

摘要： A method for creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness includes: measuring a thickness of a semiconductor-on-insulator (SOI) layer at a plurality of locations; determining a removal thickness at each of the plurality of locations; and implanting ions at the plurality of locations. The implanting is dynamically based on the removal thickness at each of the plurality of locations. The method further includes oxidizing the SOI layer to form an oxide layer, and removing the oxide layer.

摘要翻译： 一种制造具有均匀厚度的非常薄的绝缘上绝缘体（ETSOI）层的方法包括：测量多个位置上绝缘体上半导体（SOI）层的厚度; 确定所述多个位置中的每一个处的去除厚度; 以及在所述多个位置处注入离子。 基于多个位置中的每一个处的去除厚度动态地进行植入。 该方法还包括氧化SOI层以形成氧化物层，并除去氧化物层。

公开(公告)号：US20110095393A1

公开(公告)日：2011-04-28

申请号：US12603668

申请日：2009-10-22

申请人： Nathaniel C. Berliner ,  Kangguo Cheng ,  Jason E. Cummings ,  Toshiharu Furukawa ,  Jed H. Rankin ,  Robert R. Robison ,  William R. Tonti

发明人： Nathaniel C. Berliner ,  Kangguo Cheng ,  Jason E. Cummings ,  Toshiharu Furukawa ,  Jed H. Rankin ,  Robert R. Robison ,  William R. Tonti

IPC分类号： H01L29/06 ,  H01L21/66 ,  C23F1/08

CPC分类号： H01L21/7624 ,  H01L21/30625 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  Y10S438/959 ,  H01L2924/00

摘要： An extremely thin semiconductor-on-insulator (ETSOI) wafer is created having a substantially uniform thickness by measuring a semiconductor layer thickness at a plurality of selected points on a wafer; determining a removal thickness to be removed at each of the plurality of selected points such that removal of the removal thickness results in a substantially uniform within-wafer semiconductor layer thickness; implanting a species into the wafer at each of the plurality of selected points with at least one of a dose level and an energy level based on the removal thickness for the respective point; and polishing the semiconductor layer to thin the semiconductor layer.

摘要翻译： 通过测量晶片上的多个选定点处的半导体层厚度，制造出具有基本上均匀的厚度的极薄的绝缘体上半导体（ETSOI）晶片; 确定在所述多个选择点中的每一个处要除去的去除厚度，使得所述去除厚度的去除导致基本上均匀的晶片内半导体层厚度; 基于各个点的去除厚度，以剂量水平和能量水平中的至少一个将多个选择点中的每一个植入种子到晶片; 并抛光半导体层以使半导体层变薄。

公开(公告)号：US08124427B2

公开(公告)日：2012-02-28

申请号：US12603671

申请日：2009-10-22

申请人： Nathaniel C. Berliner ,  Kangguo Cheng ,  Toshiharu Furukawa ,  Douglas C. La Tulipe, Jr. ,  William R. Tonti

发明人： Nathaniel C. Berliner ,  Kangguo Cheng ,  Toshiharu Furukawa ,  Douglas C. La Tulipe, Jr. ,  William R. Tonti

IPC分类号： H01L21/66 ,  H01L21/336 ,  H01L21/00 ,  H01L21/84 ,  H01L21/31

CPC分类号： H01L22/20 ,  H01L21/302 ,  H01L21/30604 ,  H01L21/76254 ,  H01L22/12

摘要： A method for creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness includes: measuring a thickness of a semiconductor-on-insulator (SOI) layer at a plurality of locations; determining a removal thickness at each of the plurality of locations; and implanting ions at the plurality of locations. The implanting is dynamically based on the removal thickness at each of the plurality of locations. The method further includes oxidizing the SOI layer to form an oxide layer, and removing the oxide layer.

摘要翻译： 一种制造具有均匀厚度的非常薄的绝缘上绝缘体（ETSOI）层的方法包括：测量多个位置上绝缘体上半导体（SOI）层的厚度; 确定所述多个位置中的每一个处的去除厚度; 以及在所述多个位置处注入离子。 基于多个位置中的每一个处的去除厚度动态地进行植入。 该方法还包括氧化SOI层以形成氧化物层，并除去氧化物层。

公开(公告)号：US20120125538A1

公开(公告)日：2012-05-24

申请号：US13359970

申请日：2012-01-27

申请人： Nathaniel C. BERLINER ,  Kangguo CHENG ,  Toshiharu FURUKAWA ,  William R. TONTI ,  Douglas C. La TULIPE, JR.

发明人： Nathaniel C. BERLINER ,  Kangguo CHENG ,  Toshiharu FURUKAWA ,  William R. TONTI ,  Douglas C. La TULIPE, JR.

IPC分类号： H01L21/306

CPC分类号： H01L22/20 ,  H01L21/302 ,  H01L21/30604 ,  H01L21/76254 ,  H01L22/12

摘要： A method for creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness includes: measuring a thickness of a semiconductor-on-insulator (SOI) layer at a plurality of locations; determining a removal thickness at each of the plurality of locations; and implanting ions at the plurality of locations. The implanting is dynamically based on the removal thickness at each of the plurality of locations. The method further includes oxidizing the SOI layer to form an oxide layer, and removing the oxide layer.

摘要翻译： 一种制造具有均匀厚度的非常薄的绝缘上绝缘体（ETSOI）层的方法包括：测量多个位置上绝缘体上半导体（SOI）层的厚度; 确定所述多个位置中的每一个处的去除厚度; 以及在所述多个位置处注入离子。 基于多个位置中的每一个处的去除厚度动态地进行植入。 该方法还包括氧化SOI层以形成氧化物层，并除去氧化物层。