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公开(公告)号：US06497055B2
公开(公告)日：2002-12-24
申请号：US09737632
申请日：2000-12-14
IPC分类号： F26B300
CPC分类号： H01L21/67034 , Y10S134/902
摘要： A system and method are disclosed including a vapor dryer chamber (12) with a lid (14). A heater (16) is disposed within the vapor dryer chamber to vaporize liquid drying medium (24), preferably isopropyl alcohol, in the bottom of the vapor dryer chamber (12). Cooling coils (18) disposed within an upper portion of the vapor drying chamber (12) condense the drying medium vapor. A vapor monitor assembly (30) is disposed within the vapor dryer chamber (12) to monitor the vapor concentration within vapor dryer chamber (12). A controller (40) is associated with the vapor monitor assembly (30) and evaluates vapor concentration measurements from the vapor monitor (38).
摘要翻译： 公开了一种包括具有盖（14）的蒸汽干燥器室（12）的系统和方法。 在蒸汽干燥器室内设置加热器（16），以蒸发蒸气干燥器室（12）底部的液体干燥介质（24），优选异丙醇。 设置在蒸气干燥室（12）的上部内的冷却盘管（18）将干燥介质蒸气冷凝。 蒸汽监测器组件（30）设置在蒸汽干燥器室（12）内以监测蒸汽干燥器室（12）内的蒸气浓度。 控制器（40）与蒸气监测器组件（30）相关联并且从蒸气监测器（38）评估蒸汽浓度测量值。
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2.发明授权Application of ozonated DI water to scrubbers for resist strip and particle removal processes 有权将臭氧去离子水应用于洗涤器，用于抗蚀剂条和颗粒去除工艺公开(公告)号：US06634368B1
公开(公告)日：2003-10-21
申请号：US09666974
申请日：2000-09-21
IPC分类号： B08B302
CPC分类号： H01L21/6704 , B08B3/02 , B08B2203/005 , B08B2203/0288 , Y10S134/902
摘要： A method for resist strip and particle removal. Wafers (108) with a patterned resist formed thereon are placed on a wafer chuck (104) in a scrubber tool (100,200). Ozonated deionized water (112) is applied to the surface of wafer (108). The ozonated deionized water (112) strips the resist and removes the resist residue without the use of hazardous chemicals. Particle removal is accomplished in the same tool (100,200). The ozonated deionized water (112) is formed in a closed canister (114). Deionized water is circulated through the canister (114) and ozone is added to the deionized water at a premixer (118).
摘要翻译： 抗蚀剂剥离和颗粒去除的方法。 将其上形成有图案化抗蚀剂的晶片（108）放置在洗涤器工具（100,200）中的晶片卡盘（104）上。 将臭氧去离子水（112）施加到晶片（108）的表面。 臭氧化去离子水（112）剥离抗蚀剂并除去抗蚀剂残留物而不使用危险化学品。 在同一工具（100,200）中完成颗粒去除。 臭氧化去离子水（112）形成在封闭的罐（114）中。 去离子水循环通过罐（114），在预混合器（118）将臭氧加入到去离子水中。
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公开(公告)号：US07695589B2
公开(公告)日：2010-04-13
申请号：US10897286
申请日：2004-07-21
IPC分类号： C23F1/00 , C09K3/14 , H01L21/306
CPC分类号： B24B57/02 , B24B37/04 , Y10S134/902
摘要： The present invention provides a system (100) for conditioning multi-component slurries utilized in chemical mechanical polishing (CMP) of semiconductor wafers (140). The system provides a first slurry component (108), and a second slurry component (120). A conditioning component (102) has first and second inlets, and an outlet operatively coupled to a dispensing system (138). First and second flow control components (116, 126) are operably intercoupled between the first and second inlets and the first and second slurry components, respectively. The system further provides a megasonic energy source (106), adapted to generate an energy field (118) across the conditioning component. A conveyance component (114) conducts the slurry components from the inlets through the energy field, and delivers a final mixture (136) of multi-component slurry to the outlet.
摘要翻译： 本发明提供一种用于调节在半导体晶片（140）的化学机械抛光（CMP）中使用的多组分浆料的系统（100）。 该系统提供第一浆料组分（108）和第二浆料组分（120）。 调节部件（102）具有第一和第二入口以及可操作地联接到分配系统（138）的出口。 第一和第二流量控制部件（116,126）分别可操作地相互配合在第一和第二入口以及第一和第二浆料组分之间。 该系统进一步提供了一种适于在整个调节部件上产生能量场（118）的兆声波能量源（106）。 输送部件（114）将来自入口的浆料成分导入能量场，并将多组分浆料的最终混合物（136）输送到出口。
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公开(公告)号：US06643952B2
公开(公告)日：2003-11-11
申请号：US10285898
申请日：2002-11-01
IPC分类号： F26B300
CPC分类号： H01L21/67034 , Y10S134/902
摘要： A system and method are disclosed including a vapor dryer chamber (12) with a lid (14). A heater (16) is disposed within the vapor dryer chamber to vaporize liquid drying medium (24), preferably isopropyl alcohol, in the bottom of the vapor dryer chamber (12). Cooling coils (18) disposed within an upper portion of the vapor drying chamber (12) condense the drying medium vapor. A vapor monitor assembly (30) is disposed within the vapor dryer chamber (12) to monitor the vapor concentration within vapor dryer chamber (12). A controller (40) is associated with the vapor monitor assembly (30) and evaluates vapor concentration measurements from the vapor monitor (38).
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5.发明授权公开(公告)号：US06399513B1
公开(公告)日：2002-06-04
申请号：US09666988
申请日：2000-09-21
IPC分类号： H01L21302
CPC分类号： H01L21/31133 , C11D7/08 , C11D11/0047 , H01L21/02071 , H01L21/67051
摘要： A method for resist strip and metal contamination removal. Wafers (108) with a patterned resist formed thereon are subjected to an ozonated deionized water solution, such as mist (120). The ozonated deionized water solution (120) strips the resist and removes the resist residue. At the end of the process, HCl (152) is added to the deionized water (116) prior to forming the ozonated deionized water solution (120) to remove metal contaminants.
摘要翻译： 抗剥离和金属污染去除的方法。 将其上形成有图案化抗蚀剂的晶片（108）经受臭氧化的去离子水溶液，例如雾（120）。 臭氧化去离子水溶液（120）剥离抗蚀剂并除去抗蚀剂残留物。 在该方法结束时，在形成臭氧化去离子水溶液（120）之前，向去离子水（116）中加入HCl（152）以除去金属污染物。
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公开(公告)号：US06387822B1
公开(公告)日：2002-05-14
申请号：US09666576
申请日：2000-09-21
IPC分类号： B44C122
CPC分类号： H01L21/31133 , G03F7/423 , H01L21/02052
摘要： A method and apparatus for resist strip. Wafers (108) with a patterned resist formed thereon are placed in a carrier (104) in a process chamber (102). An ozonated deionized water mist (120) is sprayed on the surface of wafer (108). The ozonated deionized water mist (120) strips the resist and removes the resist residue without the use of hazardous chemicals. The ozonated deionized water mist (120) may be formed in an atomizer that mixes deionized water (116) with ozone (118). The ozonated deionized water mist (120) is then sprayed onto the wafers (108) while the wafers are being rotated.
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