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    High dielectric constant type ceramic composition
    1.
    发明授权
    High dielectric constant type ceramic composition 失效
    高介电常数陶瓷组合物

    公开(公告)号：US4265668A

    公开(公告)日：1981-05-05

    申请号：US89245

    申请日：1979-10-29

    申请人： Shinobu Fujiwara ,  Kiyoshi Furukawa ,  Nobuaki Kikuchi ,  Osamu Iizawa ,  Hitoshi Tanaka

    发明人： Shinobu Fujiwara ,  Kiyoshi Furukawa ,  Nobuaki Kikuchi ,  Osamu Iizawa ,  Hitoshi Tanaka

    IPC分类号： C04B35/499 ,  H01B3/12 ,  H01G4/12 ,  C04B35/46 ,  C04B35/00

    CPC分类号： C04B35/499 ,  H01B3/12 ,  H01G4/1263

    摘要： A basic ceramic composition of high dielectric constant type ceramic composition comprises from 68.67 to 69.19% of PbO, from 3.67 to 4.09% of MgO, from 24.17 to 26.99% of Nb.sub.2 O.sub.5 and from 0.25 to 2.97% of TiO.sub.2, all percentages being by weight. Modified composition may comprise additive of Pb(Mn.sub.2/3 W.sub.1/3)O.sub.3, Pb(Mn.sub.1/3 Nb.sub.2/3)O.sub.3, Pb(Mn.sub.1/3 Ta.sub.2/3)O.sub.3, Pb(Mn.sub.1/2 W.sub.1/2)O.sub.3, MnO, and MgO. Modified composition may comprise Ba, Sr and Ca, which replace Pb of the basic ceramic composition. In a modified composition, the content of B site elements may be larger than that of A site element of an ABO.sub.3 crystal of the high dielectric constant type ceramic composition. A high dielectric constant, low dielectric loss, low temperature dependence of capacitance, high insulation resistance and a low sintering temperature are provided by the ceramic compositions of the present invention.

    摘要翻译： 高介电常数陶瓷组合物的基本陶瓷组合物包含68.67至69.19％的PbO，3.67至4.09％的MgO，24.17至26.99％的Nb2O5和0.25至2.97％的TiO2，所有百分比均为重量百分比。 改性组合物可以包括Pb（Mn2 / 3W1 / 3）O3，Pb（Mn1 / 3Nb2 / 3）O3，Pb（Mn1 / 3Ta2 / 3）O3，Pb（Mn1 / 2W1 / 2）O3，MnO和MgO 。 改性组合物可以包含替代碱性陶瓷组合物的Pb的Ba，Sr和Ca。 在改性组合物中，B位元素的含量可以大于高介电常数型陶瓷组合物的ABO 3晶体的A位元素的含量。 本发明的陶瓷组合物提供高介电常数，低介电损耗，低电容温度依赖性，高绝缘电阻和低烧结温度。

    High dielectric constant type ceramic composition
    2.
    发明授权
    High dielectric constant type ceramic composition 失效
    高介电常数陶瓷组合物

    公开(公告)号：US4235635A

    公开(公告)日：1980-11-25

    申请号：US61015

    申请日：1979-07-26

    申请人： Osamu Iizawa ,  Shinobu Fujiwara ,  Hisayoshi Ueoka ,  Kiyoshi Furukawa ,  Nobuaki Kikuchi ,  Hitoshi Tanaka

    发明人： Osamu Iizawa ,  Shinobu Fujiwara ,  Hisayoshi Ueoka ,  Kiyoshi Furukawa ,  Nobuaki Kikuchi ,  Hitoshi Tanaka

    IPC分类号： C04B35/497 ,  H01B3/12 ,  C04B35/26

    CPC分类号： H01B3/12 ,  C04B35/497

    摘要： A novel ceramic composition exhibiting a solid solution structure of Pb(Fe.sub.2/3 W.sub.1/3)O.sub.3 --Pb(ZrO.sub.3), can be sintered at a low sintering temperature; have a high insulation resistance; have a relatively high dielectric constant in the high dielectric type ceramic dielectrics; have a low dependence of dielectric constant upon temperature, and; have a low dielectric loss.A particular amount of the additives, i.e., MnO, Pb(Mn.sub.1/3 Nb.sub.2/3)O.sub.3, Pb(Mn.sub.1/2 W.sub.1/2)O.sub.3, Pb(Mn.sub.2/3 W.sub.1/3)O.sub.3, Pb(Mn.sub.1/3 Ta.sub.2/3)O.sub.3, Cr.sub.2 O.sub.3 and CeO.sub.2, is added into the composition mentioned above.

    摘要翻译： 表现出Pb（Fe2 / 3W1 / 3）O3-Pb（ZrO3）固溶体结构的新型陶瓷组合物可以在低烧结温度下烧结; 具有很高的绝缘电阻; 在高介电常数陶瓷电介质中具有较高的介电常数; 介电常数对温度的依赖性低， 具有低介电损耗。 MnO，Pb（Mn1 / 3Nb2 / 3）O3，Pb（Mn1 / 2W1 / 2）O3，Pb（Mn2 / 3W1 / 3）O3，Pb（Mn1 / 3Ta2 / 3）O3 ，Cr 2 O 3和CeO 2加入到上述组合物中。

    Kitchen unit for physically handicapped persons
    4.
    发明授权
    Kitchen unit for physically handicapped persons 失效
    残疾人厨房单位

    公开(公告)号：US4799743A

    公开(公告)日：1989-01-24

    申请号：US44620

    申请日：1987-05-01

    申请人： Nobuaki Kikuchi ,  Hirohisa Fukuyama ,  Tamio Hirabayashi ,  Kouichi Imai

    发明人： Nobuaki Kikuchi ,  Hirohisa Fukuyama ,  Tamio Hirabayashi ,  Kouichi Imai

    IPC分类号： A47B77/02 ,  A47B77/06

    CPC分类号： A47B77/02

    摘要： In a kitchen unit specifically designed for use by physically handicapped persons sitting in a wheelchair, a pair of base cabinets mounted under a countertop are laterally spaced to define therebetween a wheelchair space opened forward and downward for allowing rolling entry of the wheelchair. With the kitchen unit thus configured, the physically handicapped person can use the kitchen unit satisfactorily and comfortably with the wheelchair extending into the wheelchair space under the countertop. Preferably, the kitchen unit includes an armrest table slidably mounted in one of the base cabinets adjacent the wheelchair space to provide a support or aid for the handicapped person during the kitchen work. A sink and surface cooking elements are located on the end portions of the countertop so as to leave therebetween a center cooking work surface while ensuring facilitated use thereof. The cooking elements are arranged in consideration of human engineering to assure comfortable handling of the cooking elements by the handicapped persons in the wheelchair. An auxiliary cabinet may be selectivly used for closure of the wheelchair space when the unit is utilized by non-handicapped persons.

    摘要翻译： 在专门设计用于坐在轮椅上的身体残疾人使用的厨房单元中，一对安装在台面下方的基座横向隔开，以便在其间形成向前和向下敞开的轮椅空间，以允许轮椅的滚动进入。 通过如此配置的厨房单元，身体残疾的人可以使用厨房单元令人满意地和舒适地与轮椅延伸到台面下的轮椅空间中。 优选地，厨房单元包括可滑动地安装在靠近轮椅空间的基座之一中的扶手台，以在厨房工作期间为残疾人提供支撑或辅助。 水槽和表面烹饪元件位于台面的端部，以便在其间留下中心烹饪工作表面，同时确保其易于使用。 烹饪元件考虑到人体工程进行布置，以确保轮椅上的残疾人对烹饪元件的舒适操作。 当该单位被非残疾人使用时，辅助柜可以选择性地用于关闭轮椅空间。

    Semiconductive ceramic composition
    8.
    发明授权
    Semiconductive ceramic composition 失效
    半导体陶瓷组合物

    公开(公告)号：US4861736A

    公开(公告)日：1989-08-29

    申请号：US082688

    申请日：1987-08-04

    申请人： Shuichi Ono ,  Masahiro Yahagi ,  Shuichi Itagaki ,  Nobuaki Kikuchi

    发明人： Shuichi Ono ,  Masahiro Yahagi ,  Shuichi Itagaki ,  Nobuaki Kikuchi

    IPC分类号： C04B35/468 ,  H01G4/12

    CPC分类号： H01G4/1272 ,  C04B35/4682

    摘要： A semiconductive ceramic composition for a reduction reoxidation type semiconductive ceramic capacitor capable of increasing capacitor, dielectric strength of the capacitor and improving temperature characteristics of the capacitor. The composition includes a BaTIO.sub.3 base component and a minor component consisting of Nb and Ce. Nb and Ce are present in amounts of 0.2 to 3.0 mol % on Nb.sub.2 O.sub.5 and CeO.sub.2 bases. Addition of Co and the like increases insulation resistance and D.C. breakdown voltage of the capacitor and further improves temperature characteristics of the capacitor.