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    High dielectric constant type ceramic composition
    1.
    发明授权
    High dielectric constant type ceramic composition 失效
    高介电常数陶瓷组合物

    公开(公告)号：US4235635A

    公开(公告)日：1980-11-25

    申请号：US61015

    申请日：1979-07-26

    申请人： Osamu Iizawa ,  Shinobu Fujiwara ,  Hisayoshi Ueoka ,  Kiyoshi Furukawa ,  Nobuaki Kikuchi ,  Hitoshi Tanaka

    发明人： Osamu Iizawa ,  Shinobu Fujiwara ,  Hisayoshi Ueoka ,  Kiyoshi Furukawa ,  Nobuaki Kikuchi ,  Hitoshi Tanaka

    IPC分类号： C04B35/497 ,  H01B3/12 ,  C04B35/26

    CPC分类号： H01B3/12 ,  C04B35/497

    摘要： A novel ceramic composition exhibiting a solid solution structure of Pb(Fe.sub.2/3 W.sub.1/3)O.sub.3 --Pb(ZrO.sub.3), can be sintered at a low sintering temperature; have a high insulation resistance; have a relatively high dielectric constant in the high dielectric type ceramic dielectrics; have a low dependence of dielectric constant upon temperature, and; have a low dielectric loss.A particular amount of the additives, i.e., MnO, Pb(Mn.sub.1/3 Nb.sub.2/3)O.sub.3, Pb(Mn.sub.1/2 W.sub.1/2)O.sub.3, Pb(Mn.sub.2/3 W.sub.1/3)O.sub.3, Pb(Mn.sub.1/3 Ta.sub.2/3)O.sub.3, Cr.sub.2 O.sub.3 and CeO.sub.2, is added into the composition mentioned above.

    摘要翻译： 表现出Pb（Fe2 / 3W1 / 3）O3-Pb（ZrO3）固溶体结构的新型陶瓷组合物可以在低烧结温度下烧结; 具有很高的绝缘电阻; 在高介电常数陶瓷电介质中具有较高的介电常数; 介电常数对温度的依赖性低， 具有低介电损耗。 MnO，Pb（Mn1 / 3Nb2 / 3）O3，Pb（Mn1 / 2W1 / 2）O3，Pb（Mn2 / 3W1 / 3）O3，Pb（Mn1 / 3Ta2 / 3）O3 ，Cr 2 O 3和CeO 2加入到上述组合物中。

    High dielectric constant type ceramic composition
    5.
    发明授权
    High dielectric constant type ceramic composition 失效
    高介电常数陶瓷组合物

    公开(公告)号：US4265668A

    公开(公告)日：1981-05-05

    申请号：US89245

    申请日：1979-10-29

    申请人： Shinobu Fujiwara ,  Kiyoshi Furukawa ,  Nobuaki Kikuchi ,  Osamu Iizawa ,  Hitoshi Tanaka

    发明人： Shinobu Fujiwara ,  Kiyoshi Furukawa ,  Nobuaki Kikuchi ,  Osamu Iizawa ,  Hitoshi Tanaka

    IPC分类号： C04B35/499 ,  H01B3/12 ,  H01G4/12 ,  C04B35/46 ,  C04B35/00

    CPC分类号： C04B35/499 ,  H01B3/12 ,  H01G4/1263

    摘要： A basic ceramic composition of high dielectric constant type ceramic composition comprises from 68.67 to 69.19% of PbO, from 3.67 to 4.09% of MgO, from 24.17 to 26.99% of Nb.sub.2 O.sub.5 and from 0.25 to 2.97% of TiO.sub.2, all percentages being by weight. Modified composition may comprise additive of Pb(Mn.sub.2/3 W.sub.1/3)O.sub.3, Pb(Mn.sub.1/3 Nb.sub.2/3)O.sub.3, Pb(Mn.sub.1/3 Ta.sub.2/3)O.sub.3, Pb(Mn.sub.1/2 W.sub.1/2)O.sub.3, MnO, and MgO. Modified composition may comprise Ba, Sr and Ca, which replace Pb of the basic ceramic composition. In a modified composition, the content of B site elements may be larger than that of A site element of an ABO.sub.3 crystal of the high dielectric constant type ceramic composition. A high dielectric constant, low dielectric loss, low temperature dependence of capacitance, high insulation resistance and a low sintering temperature are provided by the ceramic compositions of the present invention.

    摘要翻译： 高介电常数陶瓷组合物的基本陶瓷组合物包含68.67至69.19％的PbO，3.67至4.09％的MgO，24.17至26.99％的Nb2O5和0.25至2.97％的TiO2，所有百分比均为重量百分比。 改性组合物可以包括Pb（Mn2 / 3W1 / 3）O3，Pb（Mn1 / 3Nb2 / 3）O3，Pb（Mn1 / 3Ta2 / 3）O3，Pb（Mn1 / 2W1 / 2）O3，MnO和MgO 。 改性组合物可以包含替代碱性陶瓷组合物的Pb的Ba，Sr和Ca。 在改性组合物中，B位元素的含量可以大于高介电常数型陶瓷组合物的ABO 3晶体的A位元素的含量。 本发明的陶瓷组合物提供高介电常数，低介电损耗，低电容温度依赖性，高绝缘电阻和低烧结温度。

    Semiconductive ceramic composition and semiconductor ceramic capacitor
    9.
    发明授权
    Semiconductive ceramic composition and semiconductor ceramic capacitor 失效
    半导体陶瓷组合物和半导体陶瓷电容器

    公开(公告)号：US4799127A

    公开(公告)日：1989-01-17

    申请号：US79018

    申请日：1987-07-29

    申请人： Shuichi Ono ,  Shuichi Itagaki ,  Masahiro Yahagi ,  Kiyoshi Furukawa ,  Shinobu Fujiwara ,  Yasunobu Oikawa

    发明人： Shuichi Ono ,  Shuichi Itagaki ,  Masahiro Yahagi ,  Kiyoshi Furukawa ,  Shinobu Fujiwara ,  Yasunobu Oikawa

    IPC分类号： C04B35/47 ,  H01G4/008 ,  H01G4/12 ,  H01G4/10 ,  C04B41/14 ,  H01B3/02

    CPC分类号： H01G4/008 ,  C04B35/47 ,  H01G4/1281 ,  Y10T29/417 ,  Y10T29/435

    摘要： A semiconductive ceramic composition capable of exhibiting excellent electrical and physical characteristics sufficient to be used for a boundary-layer type semiconductive ceramic capacitor and such a capacitor capable of being increased in dielectric constant and insulation resistance and exhibiting excellent solderability and tensile strength of electrodes. The composition includes a SrTiO.sub.3 base material and an additive for semiconductivity consisting of Y.sub.2 O.sub.3 and Nb.sub.2 O.sub.5. The Y.sub.2 O.sub.3 and Nb.sub.2 O.sub.5 each are present in an amount of 0.1 to 0.4 mol % based on the composition. The capacitor includes a semiconductive ceramic body formed of the composition, a first conductive layer formed on each of both surfaces of the body and a second conductive layer formed on the first conductive layer. A process for manufacturing the capacitor is also provided.

    摘要翻译： 能够表现出足以用于边界层型半导体陶瓷电容器的优异的电气和物理特性的半导体陶瓷组合物和能够增加介电常数和绝缘电阻并且显示优异的电极的可焊性和拉伸强度的电容器。 该组合物包括SrTiO 3基材和由Y 2 O 3和Nb 2 O 5组成的半导电性的添加剂。 基于组成，Y 2 O 3和Nb 2 O 5的存在量为0.1〜0.4摩尔％。 电容器包括由该组合物形成的半导体陶瓷体，形成在主体的两个表面中的每一个上的第一导电层和形成在第一导电层上的第二导电层。 还提供了制造电容器的工艺。

    Reduction-reoxidation type semiconducting ceramic capacitor
    10.
    发明授权
    Reduction-reoxidation type semiconducting ceramic capacitor 失效
    还原 - 再氧化型半导体陶瓷电容器

    公开(公告)号：US4073846A

    公开(公告)日：1978-02-14

    申请号：US654979

    申请日：1976-02-03

    申请人： Hitoshi Masumura ,  Shinobu Fujiwara ,  Hitoshi Tanaka

    发明人： Hitoshi Masumura ,  Shinobu Fujiwara ,  Hitoshi Tanaka

    IPC分类号： C04B35/465 ,  C04B35/475 ,  H01G4/12 ,  C04B35/46

    CPC分类号： H01G4/1272 ,  C04B35/465 ,  C04B35/475

    摘要： An improved reduction-reoxidation type semiconducting ceramic capacitor and the method for producing the same are disclosed. The main components of the substrate of the capacitor are CaTiO.sub.3, SrTiO.sub.3 and Bi.sub.2 O.sub.3 .multidot.xTiO.sub.2. Said substrate also contains at least one member selected from the group consisting of manganese, cobalt, nickel, chromium, vanadium, niobium, tantalum, lanthanum and cerium ions in total amounts of 0.025 to 0.4% by weight. The capacitor according to the present invention excels, in the temperature independency of the capacitance and tan .delta., etc.

    摘要翻译： 公开了一种改进的还原再氧化型半导体陶瓷电容器及其制造方法。 电容器基板的主要部件是CaTiO3，SrTiO3和Bi2O3xxTiO2。 所述基材还含有总量为0.025〜0.4重量％的选自锰，钴，镍，铬，钒，铌，钽，镧和铈离子中的至少一种。 根据本发明的电容器在电容和tanδ等的独立性方面优异。