公开(公告)号：US20140263975A1

公开(公告)日：2014-09-18

申请号：US14352429

申请日：2012-08-02

Applicant: Terumasa Nagano ,  Noburo Hosokawa ,  Tomofumi Suzuki ,  Takashi Baba

Inventor： Terumasa Nagano ,  Noburo Hosokawa ,  Tomofumi Suzuki ,  Takashi Baba

IPC: G01J1/42 ,  H01L27/144

CPC classification number: H01L31/107 ,  G01J1/42 ,  G01T1/208 ,  H01L27/144 ,  H01L27/1443 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14663 ,  H01L28/20 ,  H01L31/02005 ,  H01L31/022408

Abstract: A semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in a semiconductor substrate, quenching resistors connected in series to the respective avalanche photodiodes and arranged on a first principal surface side of the semiconductor substrate, and a plurality of through-hole electrodes electrically connected to the quenching resistors and formed so as to penetrate the semiconductor substrate from the first principal surface side to a second principal surface side. A mounting substrate includes a plurality of electrodes arranged corresponding to the respective through-hole electrodes on a third principal surface side. The through-hole electrodes and the electrodes are electrically connected through bump electrodes, and a side surface of the semiconductor substrate and a side surface of a glass substrate are flush with each other.

Abstract translation: 半导体光检测元件包括以Geiger模式操作并形成在半导体衬底中的多个雪崩光电二极管，与各个雪崩光电二极管串联连接并设置在半导体衬底的第一主表面侧上的骤冷电阻器，以及多个通孔 电极连接到淬火电阻器并形成为从第一主表面侧穿过半导体衬底到第二主表面侧的电极。 安装基板包括在第三主表面侧对应于相应的通孔电极布置的多个电极。 通孔电极和电极通过凸块电极电连接，半导体衬底的侧表面和玻璃衬底的侧表面彼此齐平。

公开(公告)号：US09368528B2

公开(公告)日：2016-06-14

申请号：US14350647

申请日：2012-08-02

Applicant: Terumasa Nagano ,  Noburo Hosokawa ,  Tomofumi Suzuki ,  Takashi Baba

Inventor： Terumasa Nagano ,  Noburo Hosokawa ,  Tomofumi Suzuki ,  Takashi Baba

IPC: H01L27/144 ,  H01L31/107 ,  H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/1446 ,  H01L27/14618 ,  H01L27/14636 ,  H01L27/14658 ,  H01L31/107

Abstract: A light detection device 1 has a semiconductor light detection element having a semiconductor substrate, and a mounting substrate arranged as opposed to the semiconductor light detection element. The semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in the semiconductor substrate, and electrodes electrically connected to the respective avalanche photodiodes and arranged on a second principal surface side of the semiconductor substrate. The mounting substrate includes a plurality of electrodes arranged corresponding to the respective electrodes on a third principal surface side, and quenching resistors electrically connected to the respective electrodes and arranged on the third principal surface side. The electrodes and the electrodes are connected through bump electrodes.

Abstract translation: 光检测装置1具有半导体光检测元件，该半导体光检测元件具有半导体衬底和与半导体光检测元件相对布置的安装衬底。 半导体光检测元件包括以Geiger模式操作并形成在半导体衬底中的多个雪崩光电二极管，以及电连接到各个雪崩光电二极管并且布置在半导体衬底的第二主表面侧上的电极。 安装基板包括在第三主面侧对应于各个电极布置的多个电极，并且电连接到各个电极并且布置在第三主表面侧上的淬火电阻。 电极和电极通过凸块电极连接。

公开(公告)号：US20140327100A1

公开(公告)日：2014-11-06

申请号：US14352398

申请日：2012-08-02

Applicant: Terumasa Nagano ,  Noburo Hosokawa ,  Tomofumi Suzuki ,  Takashi Baba

Inventor： Terumasa Nagano ,  Noburo Hosokawa ,  Tomofumi Suzuki ,  Takashi Baba

IPC: H01L27/146

CPC classification number: H01L27/1446 ,  H01L27/1443 ,  H01L27/14605 ,  H01L28/20 ,  H01L31/02005 ,  H01L31/02322 ,  H01L31/107 ,  H01L2224/11

Abstract: A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel. A mounting substrate is configured so that a plurality of electrodes corresponding to the respective channels are arranged on a third principal surface side and so that a signal processing unit for processing output signals from the respective channels is arranged on a fourth principal surface side. In a semiconductor substrate, through-hole electrodes electrically connected to the signal lines are formed for the respective channels. The through-hole electrodes and the electrodes are electrically connected through bump electrodes.

Abstract translation: 半导体光检测元件具有多个通道，每个通道由包括以盖革模式操作的多个雪崩光电二极管的光电二极管阵列组成，与各雪崩光电二极管串联连接的淬火电阻器，以及淬灭电阻器 并联连接 安装基板被配置为使得与第三主面对应的多个电极布置在第三主表面上，并且使得用于处理来自各个通道的输出信号的信号处理单元被布置在第四主表面侧。 在半导体基板中，形成与各信道电连接的信号线的通孔电极。 通孔电极和电极通过凸块电极电连接。

公开(公告)号：US09435686B2

公开(公告)日：2016-09-06

申请号：US14352429

申请日：2012-08-02

Applicant: Terumasa Nagano ,  Noburo Hosokawa ,  Tomofumi Suzuki ,  Takashi Baba

Inventor： Terumasa Nagano ,  Noburo Hosokawa ,  Tomofumi Suzuki ,  Takashi Baba

IPC: G01J1/42 ,  H01L27/144 ,  H01L31/107 ,  H01L27/146 ,  G01T1/208 ,  H01L31/0224

CPC classification number: H01L31/107 ,  G01J1/42 ,  G01T1/208 ,  H01L27/144 ,  H01L27/1443 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14663 ,  H01L28/20 ,  H01L31/02005 ,  H01L31/022408

Abstract: A semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in a semiconductor substrate, quenching resistors connected in series to the respective avalanche photodiodes and arranged on a first principal surface side of the semiconductor substrate, and a plurality of through-hole electrodes electrically connected to the quenching resistors and formed so as to penetrate the semiconductor substrate from the first principal surface side to a second principal surface side. A mounting substrate includes a plurality of electrodes arranged corresponding to the respective through-hole electrodes on a third principal surface side. The through-hole electrodes and the electrodes are electrically connected through bump electrodes, and a side surface of the semiconductor substrate and a side surface of a glass substrate are flush with each other.

Abstract translation: 半导体光检测元件包括以Geiger模式操作并形成在半导体衬底中的多个雪崩光电二极管，与各个雪崩光电二极管串联连接并设置在半导体衬底的第一主表面侧上的骤冷电阻器，以及多个通孔 电极连接到淬火电阻器并形成为从第一主表面侧穿过半导体衬底到第二主表面侧的电极。 安装基板包括在第三主表面侧对应于相应的通孔电极布置的多个电极。 通孔电极和电极通过凸块电极电连接，半导体衬底的侧表面和玻璃衬底的侧表面彼此齐平。

公开(公告)号：US08969990B2

公开(公告)日：2015-03-03

申请号：US14352398

申请日：2012-08-02

Applicant: Terumasa Nagano ,  Noburo Hosokawa ,  Tomofumi Suzuki ,  Takashi Baba

Inventor： Terumasa Nagano ,  Noburo Hosokawa ,  Tomofumi Suzuki ,  Takashi Baba

IPC: H01L31/107 ,  H01L27/146

CPC classification number: H01L27/1446 ,  H01L27/1443 ,  H01L27/14605 ,  H01L28/20 ,  H01L31/02005 ,  H01L31/02322 ,  H01L31/107 ,  H01L2224/11

Abstract: A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel. A mounting substrate is configured so that a plurality of electrodes corresponding to the respective channels are arranged on a third principal surface side and so that a signal processing unit for processing output signals from the respective channels is arranged on a fourth principal surface side. In a semiconductor substrate, through-hole electrodes electrically connected to the signal lines are formed for the respective channels. The through-hole electrodes and the electrodes are electrically connected through bump electrodes.

Abstract translation: 半导体光检测元件具有多个通道，每个通道由包括以盖革模式操作的多个雪崩光电二极管的光电二极管阵列组成，与各雪崩光电二极管串联连接的淬火电阻器，以及淬灭电阻器 并联连接 安装基板被配置为使得与第三主面对应的多个电极布置在第三主表面上，并且使得用于处理来自各个通道的输出信号的信号处理单元被布置在第四主表面侧。 在半导体基板中，形成与各信道电连接的信号线的通孔电极。 通孔电极和电极通过凸块电极电连接。

公开(公告)号：US20140291486A1

公开(公告)日：2014-10-02

申请号：US14350647

申请日：2012-08-02

Applicant: Terumasa Nagano ,  Noburo Hosokawa ,  Tomofumi Suzuki ,  Takashi Baba

Inventor： Terumasa Nagano ,  Noburo Hosokawa ,  Tomofumi Suzuki ,  Takashi Baba

IPC: H01L27/144

CPC classification number: H01L27/14643 ,  H01L27/1446 ,  H01L27/14618 ,  H01L27/14636 ,  H01L27/14658 ,  H01L31/107

Abstract: A light detection device 1 has a semiconductor light detection element having a semiconductor substrate, and a mounting substrate arranged as opposed to the semiconductor light detection element. The semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in the semiconductor substrate, and electrodes electrically connected to the respective avalanche photodiodes and arranged on a second principal surface side of the semiconductor substrate. The mounting substrate includes a plurality of electrodes arranged corresponding to the respective electrodes on a third principal surface side, and quenching resistors electrically connected to the respective electrodes and arranged on the third principal surface side. The electrodes and the electrodes are connected through bump electrodes.

Abstract translation: 光检测装置1具有半导体光检测元件，该半导体光检测元件具有半导体衬底和与半导体光检测元件相对布置的安装衬底。 半导体光检测元件包括以Geiger模式操作并形成在半导体衬底中的多个雪崩光电二极管，以及电连接到各个雪崩光电二极管并且布置在半导体衬底的第二主表面侧上的电极。 安装基板包括在第三主面侧对应于各个电极布置的多个电极，并且电连接到各个电极并且布置在第三主表面侧上的淬火电阻。 电极和电极通过凸块电极连接。