公开(公告)号：US20150048304A1

公开(公告)日：2015-02-19

申请号：US14344602

申请日：2011-09-30

申请人： Noritaka Niwa ,  Tetsuhiko Inazu

发明人： Noritaka Niwa ,  Tetsuhiko Inazu

IPC分类号： H01L33/00 ,  H01L33/62 ,  H01L33/40 ,  H01L33/32 ,  H01L33/06 ,  H01L33/38

CPC分类号： H01L33/0095 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066

摘要： A nitride semiconductor element 1 includes a base structure part 5, and an element structure part 11 formed on the base structure part 5 and having at least an n-type AlGaN based semiconductor layer 6, and p-type AlGaN based semiconductor layers 8, 9, 10, and further includes an n-electrode contact part 13a formed on the n-type AlGaN based semiconductor layer 6, an n-electrode pad part 13b formed on the n-electrode contact part 13a, and a p-electrode 12 formed on the p-type AlGaN based semiconductor layers 8, 9, 10, in which an AlN mole fraction in the n-type AlGaN based semiconductor layer 6 is 20% or more, the n-electrode contact part 13a includes one or more metal layers, and the p-electrode 12 and the n-electrode pad part 13b have a common laminated structure of two or more layers having an Au layer as an uppermost layer, and an Au diffusion preventing layer composed of conductive metal oxide and formed under the uppermost layer to prevent Au diffusion.

摘要翻译： 氮化物半导体元件1包括基底结构部分5和形成在基底结构部分5上并具有至少n型AlGaN基半导体层6和p型AlGaN基半导体层8,9的元件结构部分11 10，并且还包括形成在n型AlGaN基半导体层6上的n电极接触部13a，形成在n电极接触部13a上的n电极焊盘部13b和形成在n型AlGaN基半导体层上的p电极12 n型AlGaN系半导体层6中的AlN摩尔分数为20％以上的p型AlGaN系半导体层8,9,10，n电极接触部13a包括一个以上的金属层， p电极12和n电极焊盘部13b具有以Au层为最上层的两层以上的共同层叠结构，以及由导电性金属氧化物构成的Au扩散防止层，形成在最上层 以防止Au扩散。

公开(公告)号：US09281439B2

公开(公告)日：2016-03-08

申请号：US14344602

申请日：2011-09-30

申请人： Noritaka Niwa ,  Tetsuhiko Inazu

发明人： Noritaka Niwa ,  Tetsuhiko Inazu

IPC分类号： H01L33/40 ,  H01L33/00 ,  H01L33/32 ,  H01L29/45 ,  H01L33/06 ,  H01L33/38 ,  H01L33/62 ,  H01L29/20

CPC分类号： H01L33/0095 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066

摘要： A nitride semiconductor element 1 includes a base structure part 5, and an element structure part 11 formed on the base structure part 5 and having at least an n-type AlGaN based semiconductor layer 6, and p-type AlGaN based semiconductor layers 8, 9, 10, and further includes an n-electrode contact part 13a formed on the n-type AlGaN based semiconductor layer 6, an n-electrode pad part 13b formed on the n-electrode contact part 13a, and a p-electrode 12 formed on the p-type AlGaN based semiconductor layers 8, 9, 10, in which an AlN mole fraction in the n-type AlGaN based semiconductor layer 6 is 20% or more, the n-electrode contact part 13a includes one or more metal layers, and the p-electrode 12 and the n-electrode pad part 13b have a common laminated structure of two or more layers having an Au layer as an uppermost layer, and an Au diffusion preventing layer composed of conductive metal oxide and formed under the uppermost layer to prevent Au diffusion.

摘要翻译： 氮化物半导体元件1包括基底结构部分5和形成在基底结构部分5上并具有至少n型AlGaN基半导体层6和p型AlGaN基半导体层8,9的元件结构部分11 10，并且还包括形成在n型AlGaN基半导体层6上的n电极接触部13a，形成在n电极接触部13a上的n电极焊盘部13b和形成在n型AlGaN基半导体层上的p电极12 n型AlGaN系半导体层6中的AlN摩尔分数为20％以上的p型AlGaN系半导体层8,9,10，n电极接触部13a包括一个以上的金属层， p电极12和n电极焊盘部13b具有以Au层为最上层的两层以上的共同层叠结构，以及由导电性金属氧化物构成的Au扩散防止层，形成在最上层 以防止Au扩散。