公开(公告)号：US20140021442A1

公开(公告)日：2014-01-23

申请号：US14009954

申请日：2011-04-21

申请人： Tetsuhiko Inazu ,  Cyril Pernot ,  Akira Hirano

发明人： Tetsuhiko Inazu ,  Cyril Pernot ,  Akira Hirano

IPC分类号： H01L33/40

CPC分类号： H01L33/405 ,  H01L33/32

摘要： An active layer including an AlGaN semiconductor layer having a band gap energy of 3.4 eV or higher and a p-type cladding layer configured of a p-type AlGaN semiconductor layer and located above the active layer are formed in a first region on the n-type cladding layer, the first region being in a plane parallel to a surface of the n-cladding layer configured of an n-type AlGaN semiconductor layer. An n-electrode metal layer making Ohmic contact with the n-type cladding layer is formed on an adjacent region to the first region in a second region which is a region other than the first region on the n-type cladding layer. A first reflective metal layer reflecting ultraviolet light emitted from the active layer is formed on a surface of the n-type cladding layer in the second region other than the adjacent region. The n-electrode metal layer is arranged between the first region and a region in which the first reflective metal layer contacts the surface of the n-type cladding layer.

摘要翻译： 在n型半导体器件的第1区域形成有包含具有3.4eV以上的带隙能量的AlGaN半导体层和位于有源层上方的p型AlGaN半导体层构成的p型覆层的有源层， 所述第一区域在与n型AlGaN半导体层构成的n包层的表面平行的平面内。 在与n型包覆层上的第一区域以外的区域的第二区域中，在与第一区域相邻的区域上形成与n型覆层形成欧姆接触的n电极金属层。 反射从有源层发射的紫外光的第一反射金属层形成在除了相邻区域之外的第二区域中的n型包覆层的表面上。 n电极金属层配置在第一区域与第一反射金属层与n型包覆层的表面接触的区域之间。

公开(公告)号：US09281439B2

公开(公告)日：2016-03-08

申请号：US14344602

申请日：2011-09-30

申请人： Noritaka Niwa ,  Tetsuhiko Inazu

发明人： Noritaka Niwa ,  Tetsuhiko Inazu

IPC分类号： H01L33/40 ,  H01L33/00 ,  H01L33/32 ,  H01L29/45 ,  H01L33/06 ,  H01L33/38 ,  H01L33/62 ,  H01L29/20

CPC分类号： H01L33/0095 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066

摘要： A nitride semiconductor element 1 includes a base structure part 5, and an element structure part 11 formed on the base structure part 5 and having at least an n-type AlGaN based semiconductor layer 6, and p-type AlGaN based semiconductor layers 8, 9, 10, and further includes an n-electrode contact part 13a formed on the n-type AlGaN based semiconductor layer 6, an n-electrode pad part 13b formed on the n-electrode contact part 13a, and a p-electrode 12 formed on the p-type AlGaN based semiconductor layers 8, 9, 10, in which an AlN mole fraction in the n-type AlGaN based semiconductor layer 6 is 20% or more, the n-electrode contact part 13a includes one or more metal layers, and the p-electrode 12 and the n-electrode pad part 13b have a common laminated structure of two or more layers having an Au layer as an uppermost layer, and an Au diffusion preventing layer composed of conductive metal oxide and formed under the uppermost layer to prevent Au diffusion.

摘要翻译： 氮化物半导体元件1包括基底结构部分5和形成在基底结构部分5上并具有至少n型AlGaN基半导体层6和p型AlGaN基半导体层8,9的元件结构部分11 10，并且还包括形成在n型AlGaN基半导体层6上的n电极接触部13a，形成在n电极接触部13a上的n电极焊盘部13b和形成在n型AlGaN基半导体层上的p电极12 n型AlGaN系半导体层6中的AlN摩尔分数为20％以上的p型AlGaN系半导体层8,9,10，n电极接触部13a包括一个以上的金属层， p电极12和n电极焊盘部13b具有以Au层为最上层的两层以上的共同层叠结构，以及由导电性金属氧化物构成的Au扩散防止层，形成在最上层 以防止Au扩散。

公开(公告)号：US20150048304A1

公开(公告)日：2015-02-19

申请号：US14344602

申请日：2011-09-30

申请人： Noritaka Niwa ,  Tetsuhiko Inazu

发明人： Noritaka Niwa ,  Tetsuhiko Inazu

IPC分类号： H01L33/00 ,  H01L33/62 ,  H01L33/40 ,  H01L33/32 ,  H01L33/06 ,  H01L33/38

CPC分类号： H01L33/0095 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066

摘要： A nitride semiconductor element 1 includes a base structure part 5, and an element structure part 11 formed on the base structure part 5 and having at least an n-type AlGaN based semiconductor layer 6, and p-type AlGaN based semiconductor layers 8, 9, 10, and further includes an n-electrode contact part 13a formed on the n-type AlGaN based semiconductor layer 6, an n-electrode pad part 13b formed on the n-electrode contact part 13a, and a p-electrode 12 formed on the p-type AlGaN based semiconductor layers 8, 9, 10, in which an AlN mole fraction in the n-type AlGaN based semiconductor layer 6 is 20% or more, the n-electrode contact part 13a includes one or more metal layers, and the p-electrode 12 and the n-electrode pad part 13b have a common laminated structure of two or more layers having an Au layer as an uppermost layer, and an Au diffusion preventing layer composed of conductive metal oxide and formed under the uppermost layer to prevent Au diffusion.

摘要翻译： 氮化物半导体元件1包括基底结构部分5和形成在基底结构部分5上并具有至少n型AlGaN基半导体层6和p型AlGaN基半导体层8,9的元件结构部分11 10，并且还包括形成在n型AlGaN基半导体层6上的n电极接触部13a，形成在n电极接触部13a上的n电极焊盘部13b和形成在n型AlGaN基半导体层上的p电极12 n型AlGaN系半导体层6中的AlN摩尔分数为20％以上的p型AlGaN系半导体层8,9,10，n电极接触部13a包括一个以上的金属层， p电极12和n电极焊盘部13b具有以Au层为最上层的两层以上的共同层叠结构，以及由导电性金属氧化物构成的Au扩散防止层，形成在最上层 以防止Au扩散。

公开(公告)号：US20130328013A1

公开(公告)日：2013-12-12

申请号：US14001342

申请日：2011-03-23

申请人： Tetsuhiko Inazu ,  Cyril Pernot ,  Akira Hirano

发明人： Tetsuhiko Inazu ,  Cyril Pernot ,  Akira Hirano

IPC分类号： H01L33/10

CPC分类号： H01L33/10 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L2933/0016

摘要： A nitride semiconductor ultraviolet light-emitting element is formed by laminating at least an n-type cladding layer configured of an n-type AlGaN semiconductor layer, an active layer including an AlGaN semiconductor layer having band gap energy of 3.4 eV or larger, and a p-type cladding layer configured of a p-type AlGaN semiconductor layer. A p-type contact layer configured of a p-type AlGaN semiconductor layer that absorbs ultraviolet light emitted from the active layer is formed on the p-type cladding layer. The p-type contact layer has an opening portion penetrating through to a surface of the p-type cladding layer. A p-electrode metal layer that makes Ohmic contact or non-rectifying contact with the p-type contact layer is formed on the p-type contact layer so as not to completely block the opening portion. A reflective metal layer for reflecting the ultraviolet light is formed at least on the opening portion and covers the surface of the p-type cladding layer that is exposed through the opening portion either directly or through a transparent insulating layer that allows the ultraviolet light to pass therethrough.

摘要翻译： 氮化物半导体紫外线发光元件是通过层叠由n型AlGaN半导体层构成的至少n型包覆层，包含具有3.4eV以上的带隙能量的AlGaN半导体层的有源层，以及 p型覆层，由p型AlGaN半导体层构成。 在p型覆层上形成由p型AlGaN半导体层构成的p型接触层，该p型接触层吸收从有源层发射的紫外线。 p型接触层具有穿透p型包层的表面的开口部。 在p型接触层上形成与p型接触层进行欧姆接触或非整流接触的p电极金属层，以不完全阻挡开口部。 至少在开口部分上形成用于反射紫外光的反射金属层，并且通过开口部分直接或通过允许紫外光通过的透明绝缘层覆盖p型包覆层的表面 通过。

公开(公告)号：US09112115B2

公开(公告)日：2015-08-18

申请号：US14009954

申请日：2011-04-21

申请人： Tetsuhiko Inazu ,  Cyril Pernot ,  Akira Hirano

发明人： Tetsuhiko Inazu ,  Cyril Pernot ,  Akira Hirano

IPC分类号： H01L29/06 ,  H01L33/40 ,  H01L33/32

CPC分类号： H01L33/405 ,  H01L33/32

摘要： An active layer including an AlGaN semiconductor layer having a band gap energy of 3.4 eV or higher and a p-type cladding layer configured of a p-type AlGaN semiconductor layer and located above the active layer are formed in a first region on the n-type cladding layer, the first region being in a plane parallel to a surface of the n-cladding layer configured of an n-type AlGaN semiconductor layer. An n-electrode metal layer making Ohmic contact with the n-type cladding layer is formed on an adjacent region to the first region in a second region which is a region other than the first region on the n-type cladding layer. A first reflective metal layer reflecting ultraviolet light emitted from the active layer is formed on a surface of the n-type cladding layer in the second region other than the adjacent region. The n-electrode metal layer is arranged between the first region and a region in which the first reflective metal layer contacts the surface of the n-type cladding layer.

摘要翻译： 在n型半导体器件的第1区域形成有包含具有3.4eV以上的带隙能量的AlGaN半导体层和位于有源层上方的p型AlGaN半导体层构成的p型覆层的有源层， 所述第一区域在与n型AlGaN半导体层构成的n包层的表面平行的平面内。 在与n型包覆层上的第一区域以外的区域的第二区域中，在与第一区域相邻的区域上形成与n型覆层形成欧姆接触的n电极金属层。 反射从有源层发射的紫外光的第一反射金属层形成在除了相邻区域之外的第二区域中的n型包覆层的表面上。 n电极金属层配置在第一区域与第一反射金属层与n型包覆层的表面接触的区域之间。

公开(公告)号：US08822976B2

公开(公告)日：2014-09-02

申请号：US14001342

申请日：2011-03-23

申请人： Tetsuhiko Inazu ,  Cyril Pernot ,  Akira Hirano

发明人： Tetsuhiko Inazu ,  Cyril Pernot ,  Akira Hirano

IPC分类号： H01L29/06 ,  H01L33/40 ,  H01L33/10 ,  H01L33/38 ,  H01L33/32

CPC分类号： H01L33/10 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L2933/0016

摘要： A nitride semiconductor ultraviolet light-emitting element is formed by laminating at least an n-type cladding layer configured of an n-type AlGaN semiconductor layer, an active layer including an AlGaN semiconductor layer having band gap energy of 3.4 eV or larger, and a p-type cladding layer configured of a p-type AlGaN semiconductor layer. A p-type contact layer configured of a p-type AlGaN semiconductor layer that absorbs ultraviolet light emitted from the active layer is formed on the p-type cladding layer. The p-type contact layer has an opening portion penetrating through to a surface of the p-type cladding layer. A p-electrode metal layer that makes Ohmic contact or non-rectifying contact with the p-type contact layer is formed on the p-type contact layer so as not to completely block the opening portion. A reflective metal layer for reflecting the ultraviolet light is formed at least on the opening portion and covers the surface of the p-type cladding layer that is exposed through the opening portion either directly or through a transparent insulating layer that allows the ultraviolet light to pass therethrough.

摘要翻译： 氮化物半导体紫外线发光元件是通过层叠由n型AlGaN半导体层构成的至少n型包覆层，包含具有3.4eV以上的带隙能量的AlGaN半导体层的有源层，以及 p型覆层，由p型AlGaN半导体层构成。 在p型覆层上形成由p型AlGaN半导体层构成的p型接触层，该p型接触层吸收从有源层发射的紫外线。 p型接触层具有穿透p型包层的表面的开口部。 在p型接触层上形成与p型接触层进行欧姆接触或非整流接触的p电极金属层，以不完全阻挡开口部。 至少在开口部分上形成用于反射紫外光的反射金属层，并且通过开口部分直接或通过允许紫外光通过的透明绝缘层覆盖p型包覆层的表面 通过。