摘要:
Plasma etch-cleaning of substrates is performed by means of a plasma discharge arrangement comprising an electron source cathode (5) and an anode arrangement (7). The anode arrangement (7) comprises on one hand an anode electrode (9) and on the other hand and electrically isolated therefrom a confinement (11). The confinement (11) has an opening (13) directed towards an area (S) of a substrate (21) to be cleaned. The electron source cathode (5) and the anode electrode (9) are electrically supplied by a supply circuit with a supply source (19). The circuit is operated electrically floating.
摘要:
Plasma etch-cleaning of substrates is performed by means of a plasma discharge arrangement comprising an electron source cathode (5) and an anode arrangement (7). The anode arrangement (7) comprises on one hand an anode electrode (9) and on the other hand and electrically isolated therefrom a confinement (11). The confinement (11) has an opening (13) directed towards an area (S) of a substrate (21) to be cleaned. The electron source cathode (5) and the anode electrode (9) are electrically supplied by a supply circuit with a supply source (19). The circuit is operated electrically floating.