High-power sputtering source
    2.
    发明授权
    High-power sputtering source 有权
    大功率溅射源

    公开(公告)号:US09376745B2

    公开(公告)日:2016-06-28

    申请号:US14112618

    申请日:2012-03-30

    IPC分类号: C23C14/34 C23C14/35 H01J37/34

    摘要: The invention relates to a magnetron sputtering process that allows material to be sputtered from a target surface in such a way that a high percentage of the sputtered material is provided in the form of ions. According to the invention, said aim is achieved using a simple generator, the power of which is fed to multiple magnetron sputtering sources spread out over several time intervals, i.e. the maximum power is supplied to one sputtering source during one time interval, and the maximum power is supplied to the following sputtering source in the subsequent time interval, such that discharge current densities of more than 0.2 A/cm2 are obtained. The sputtering target can cool down during the off time, thus preventing the temperature limit from being exceeded.

    摘要翻译: 本发明涉及一种磁控溅射工艺,其允许材料以目标表面溅射,使得高比例的溅射材料以离子的形式提供。 根据本发明,使用简单的发生器实现所述目的,其功率被馈送到在多个时间间隔内分布的多个磁控溅射源,即在一个时间间隔期间将最大功率提供给一个溅射源,并且最大值 在随后的时间间隔内向下一个溅射源供电,从而获得大于0.2A / cm 2的放电电流密度。 溅射靶可以在关闭时间内冷却,从而防止超出温度限制。

    ARC DEPOSITION SOURCE HAVING A DEFINED ELECTRIC FIELD
    3.
    发明申请
    ARC DEPOSITION SOURCE HAVING A DEFINED ELECTRIC FIELD 审中-公开
    具有定义电场的ARC沉积源

    公开(公告)号:US20130126347A1

    公开(公告)日:2013-05-23

    申请号:US13805730

    申请日:2011-06-03

    IPC分类号: C23C14/35

    摘要: The invention relates to an arc deposition device, comprising a cathode, an anode, as well as a voltage source for putting the anode at positive potential relative to the cathode. The device also comprises magnetic elements, which cause a magnetic field over the cathode surface, wherein the anode is arranged in the vicinity of the cathode in such a way that the magnetic field lines exiting from the cathode surface hit the anode.

    摘要翻译: 本发明涉及一种电弧沉积装置,其包括阴极,阳极以及用于将阳极相对于阴极置于正电位的电压源。 该装置还包括在阴极表面上产生磁场的磁性元件,其中阳极被布置在阴极附近,使得从阴极表面离开的磁场线撞击阳极。

    Vacuum chamber on a frame basis for coating installations
    4.
    发明申请
    Vacuum chamber on a frame basis for coating installations 有权
    真空室用于涂装设备

    公开(公告)号:US20090107396A1

    公开(公告)日:2009-04-30

    申请号:US12259910

    申请日:2008-10-28

    IPC分类号: C23C14/00

    CPC分类号: C23C16/44 C23C14/22

    摘要: The present invention relates to a vacuum chamber and to its production. According to the invention, the vacuum chamber comprises a frame into which insert plates are placed. The insert plates form together with the frame a closed space in which a vacuum can be created. Preferably, the shell of the frame is extracted from an integrally formed metal piece, with a large portion of material being removed, leading to openings for the insert plates to be created. This has among others the advantage that no welding seams are necessary where the individual plates are inserted.

    摘要翻译: 本发明涉及真空室及其生产。 根据本发明,真空室包括其中放置有插入板的框架。 插入板与框架一起形成封闭空间,其中可以产生真空。 优选地,框架的外壳从整体形成的金属件中取出,大部分材料被移除,导致用于插入板的产生的开口。 这其中还有一个优点是在插入单个板时不需要焊缝。

    Magnetron sputtering source
    6.
    发明授权
    Magnetron sputtering source 失效
    磁控溅射源

    公开(公告)号:US6093293A

    公开(公告)日:2000-07-25

    申请号:US26446

    申请日:1998-02-19

    摘要: A sputter source has at least two electrically mutually isolated stationary bar-shaped target arrangements mounted one alongside the other and separated by respective slits. Each of the target arrangements includes a respective electric pad so that each target arrangement may be operated electrically independently from the other target arrangement. Each target arrangement also has a controlled magnet arrangement for generating a time-varying magnetron field upon the respective target arrangement. The magnet arrangements may be controlled independently from each other. The source further has an anode arrangement with anodes alongside and between the target arrangements and/or along smaller sides of the target arrangements.

    摘要翻译: 溅射源具有至少两个电相互隔离的固定的棒状靶布置,其一个并排安装并且由相应的狭缝分开。 每个目标装置包括相应的电垫,使得每个目标装置可以独立于另一个目标装置电动操作。 每个目标布置还具有受控的磁体布置,用于在各自的目标布置上产生时变磁控管场。 磁体布置可以彼此独立地控制。 该源还具有阳极布置,阳极与目标布置之间和目标布置之间和/或沿着目标布置的较小侧面。

    Plasma source
    9.
    发明授权
    Plasma source 有权
    等离子体源

    公开(公告)号:US09226379B2

    公开(公告)日:2015-12-29

    申请号:US14343549

    申请日:2012-08-29

    摘要: The present invention relates to a plasma source which is arranged in floating fashion on a vacuum chamber, wherein the plasma source comprises a source housing, and a filament is provided in the source housing and is arranged so as to be insulated therefrom, wherein means for measuring the potential drop between the source housing and the filament are provided. The measured potential drop can be used for regulating the voltage heating the filament. According to the invention, corresponding means are provided.

    摘要翻译: 本发明涉及一种以浮动方式设置在真空室上的等离子体源,其中等离子体源包括源壳体,并且灯丝设置在源壳体中并且被布置成与其绝缘,其中用于 提供测量源壳体和灯丝之间的电位降。 测量的电位降可用于调节灯丝的电压加热。 根据本发明,提供了相应的装置。

    Arc source and magnet configuration
    10.
    发明授权
    Arc source and magnet configuration 有权
    电弧源和磁铁配置

    公开(公告)号:US09165749B2

    公开(公告)日:2015-10-20

    申请号:US11747999

    申请日:2007-05-14

    摘要: The invention relates to an arc source with a target (1) having a target front face (2) for the vacuum vaporization of the target material, a target backside with a cooling plate (4), a central target region (Z) as well as a target margin. The arc source further comprises a magnet configuration (8, 9) with an inner magnet system (8) and/or an outer magnet system (9) for the generation of a magnetic field in the proximity of the target front face. At least one of the magnet systems (8) is herein radially poled and effects alone or in connection with the particular other magnet system that the field lines of the magnetic field extend here substantially parallel to the target front face (2).

    摘要翻译: 本发明涉及一种具有目标物(1)的电弧源,目标物(1)具有用于目标材料的真空蒸发的目标正面(2),具有冷却板(4)的目标背面,中心目标区域(Z)) 作为目标边际。 电弧源还包括具有用于在目标正面附近产生磁场的内磁体系统(8)和/或外磁体系统(9)的磁体构造(8,9)。 磁体系统(8)中的至少一个在本文中是径向极化的,并且单独地或与特定的其它磁体系统结合,磁场的场线在这里基本上平行于目标前表面(2)延伸。