公开(公告)号：US08582114B2

公开(公告)日：2013-11-12

申请号：US13209778

申请日：2011-08-15

申请人： Amnon Manassen ,  Daniel Kandel ,  Moshe Baruch ,  Vladimir Levinski ,  Noam Sapiens ,  Joel Seligson ,  Andy Hill ,  Ohad Bachar ,  Daria Negri ,  Ofer Zaharan

发明人： Amnon Manassen ,  Daniel Kandel ,  Moshe Baruch ,  Vladimir Levinski ,  Noam Sapiens ,  Joel Seligson ,  Andy Hill ,  Ohad Bachar ,  Daria Negri ,  Ofer Zaharan

IPC分类号： G01B11/02

CPC分类号： G03F7/70633

摘要： The present invention may include measuring a first phase distribution across a pupil plane of a portion of illumination reflected from a first overlay target of a semiconductor wafer, wherein the first overlay target is fabricated to have a first intentional overlay, measuring a second phase distribution across the pupil plane of a portion of illumination reflected from a second overlay target, wherein the second overlay target is fabricated to have a second intentional overlay in a direction opposite to and having the same magnitude as the first intentional overlay, determining a first phase tilt associated with a sum of the first and second phase distributions, determining a second phase tilt associated with a difference between the first and second phase distributions, calibrating a set of phase tilt data, and determining a test overlay value associated with the first and second overlay target.

摘要翻译： 本发明可以包括测量跨越从半导体晶片的第一覆盖目标反射的照明部分的光瞳平面的第一相分布，其中第一覆盖目标被制造为具有第一有意覆盖，测量第二相位分布 从第二覆盖目标反射的照明部分的光瞳平面，其中第二覆盖目标被制造为具有与第一有意重叠相反并具有相同幅度的方向的第二有意覆盖，确定相关联的第一相位倾斜 具有第一和第二相位分布的总和，确定与第一和第二相位分布之间的差相关联的第二相位倾斜，校准一组相位倾斜数据，以及确定与第一和第二覆盖目标相关联的测试覆盖值 。

公开(公告)号：US20130044331A1

公开(公告)日：2013-02-21

申请号：US13209778

申请日：2011-08-15

申请人： Amnon Manassen ,  Daniel Kandel ,  Moshe Baruch ,  Vladimir Levinski ,  Noam Sapiens ,  Joel Seligson ,  Andy Hill ,  Ohad Bachar ,  Daria Negri ,  Ofer Zaharan

发明人： Amnon Manassen ,  Daniel Kandel ,  Moshe Baruch ,  Vladimir Levinski ,  Noam Sapiens ,  Joel Seligson ,  Andy Hill ,  Ohad Bachar ,  Daria Negri ,  Ofer Zaharan

IPC分类号： G01B11/14 ,  G01B11/26

CPC分类号： G03F7/70633

摘要： The present invention may include measuring a first phase distribution across a pupil plane of a portion of illumination reflected from a first overlay target of a semiconductor wafer, wherein the first overlay target is fabricated to have a first intentional overlay, measuring a second phase distribution across the pupil plane of a portion of illumination reflected from a second overlay target, wherein the second overlay target is fabricated to have a second intentional overlay in a direction opposite to and having the same magnitude as the first intentional overlay, determining a first phase tilt associated with a sum of the first and second phase distributions, determining a second phase tilt associated with a difference between the first and second phase distributions, calibrating a set of phase tilt data, and determining a test overlay value associated with the first and second overlay target.

摘要翻译： 本发明可以包括测量跨越从半导体晶片的第一覆盖目标反射的照明部分的光瞳平面的第一相分布，其中第一覆盖目标被制造为具有第一有意覆盖，测量第二相位分布 从第二覆盖目标反射的照明部分的光瞳平面，其中第二覆盖目标被制造为具有与第一有意重叠相反并具有相同幅度的方向的第二有意覆盖，确定相关联的第一相位倾斜 具有第一和第二相位分布的总和，确定与第一和第二相位分布之间的差相关联的第二相位倾斜，校准一组相位倾斜数据，以及确定与第一和第二覆盖目标相关联的测试覆盖值 。