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公开(公告)号：US08582114B2
公开(公告)日：2013-11-12
申请号：US13209778
申请日：2011-08-15
申请人： Amnon Manassen , Daniel Kandel , Moshe Baruch , Vladimir Levinski , Noam Sapiens , Joel Seligson , Andy Hill , Ohad Bachar , Daria Negri , Ofer Zaharan
发明人： Amnon Manassen , Daniel Kandel , Moshe Baruch , Vladimir Levinski , Noam Sapiens , Joel Seligson , Andy Hill , Ohad Bachar , Daria Negri , Ofer Zaharan
IPC分类号： G01B11/02
CPC分类号： G03F7/70633
摘要： The present invention may include measuring a first phase distribution across a pupil plane of a portion of illumination reflected from a first overlay target of a semiconductor wafer, wherein the first overlay target is fabricated to have a first intentional overlay, measuring a second phase distribution across the pupil plane of a portion of illumination reflected from a second overlay target, wherein the second overlay target is fabricated to have a second intentional overlay in a direction opposite to and having the same magnitude as the first intentional overlay, determining a first phase tilt associated with a sum of the first and second phase distributions, determining a second phase tilt associated with a difference between the first and second phase distributions, calibrating a set of phase tilt data, and determining a test overlay value associated with the first and second overlay target.
摘要翻译： 本发明可以包括测量跨越从半导体晶片的第一覆盖目标反射的照明部分的光瞳平面的第一相分布，其中第一覆盖目标被制造为具有第一有意覆盖，测量第二相位分布 从第二覆盖目标反射的照明部分的光瞳平面，其中第二覆盖目标被制造为具有与第一有意重叠相反并具有相同幅度的方向的第二有意覆盖，确定相关联的第一相位倾斜 具有第一和第二相位分布的总和，确定与第一和第二相位分布之间的差相关联的第二相位倾斜，校准一组相位倾斜数据，以及确定与第一和第二覆盖目标相关联的测试覆盖值 。
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公开(公告)号：US20130044331A1
公开(公告)日：2013-02-21
申请号：US13209778
申请日：2011-08-15
申请人： Amnon Manassen , Daniel Kandel , Moshe Baruch , Vladimir Levinski , Noam Sapiens , Joel Seligson , Andy Hill , Ohad Bachar , Daria Negri , Ofer Zaharan
发明人： Amnon Manassen , Daniel Kandel , Moshe Baruch , Vladimir Levinski , Noam Sapiens , Joel Seligson , Andy Hill , Ohad Bachar , Daria Negri , Ofer Zaharan
CPC分类号： G03F7/70633
摘要： The present invention may include measuring a first phase distribution across a pupil plane of a portion of illumination reflected from a first overlay target of a semiconductor wafer, wherein the first overlay target is fabricated to have a first intentional overlay, measuring a second phase distribution across the pupil plane of a portion of illumination reflected from a second overlay target, wherein the second overlay target is fabricated to have a second intentional overlay in a direction opposite to and having the same magnitude as the first intentional overlay, determining a first phase tilt associated with a sum of the first and second phase distributions, determining a second phase tilt associated with a difference between the first and second phase distributions, calibrating a set of phase tilt data, and determining a test overlay value associated with the first and second overlay target.
摘要翻译： 本发明可以包括测量跨越从半导体晶片的第一覆盖目标反射的照明部分的光瞳平面的第一相分布，其中第一覆盖目标被制造为具有第一有意覆盖，测量第二相位分布 从第二覆盖目标反射的照明部分的光瞳平面，其中第二覆盖目标被制造为具有与第一有意重叠相反并具有相同幅度的方向的第二有意覆盖，确定相关联的第一相位倾斜 具有第一和第二相位分布的总和，确定与第一和第二相位分布之间的差相关联的第二相位倾斜，校准一组相位倾斜数据，以及确定与第一和第二覆盖目标相关联的测试覆盖值 。
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公开(公告)号：US09164397B2
公开(公告)日：2015-10-20
申请号：US13188623
申请日：2011-07-22
申请人： Amnon Manassen , Daniel Kandel , Moshe Baruch , Joel L. Seligson , Alexander Svizher , Guy Cohen , Efraim Rotem , Ohad Bachar , Daria Negri , Noam Sapiens
发明人： Amnon Manassen , Daniel Kandel , Moshe Baruch , Joel L. Seligson , Alexander Svizher , Guy Cohen , Efraim Rotem , Ohad Bachar , Daria Negri , Noam Sapiens
CPC分类号： G03F7/70633 , G01N21/55 , G03F7/70616
摘要： The present invention includes an illumination source, at least one illumination symmetrization module (ISM) configured to symmetrize at least a portion of light emanating from the illumination source, a first beam splitter configured to direct a first portion of light processed by the ISM along an object path to a surface of one or more specimens and a second portion of light processed by the ISM along a reference path, and a detector disposed along a primary optical axis, wherein the detector is configured to collect a portion of light reflected from the surface of the one or more specimens.
摘要翻译： 本发明包括照明源，至少一个照明对称化模块（ISM），被配置为对来自照明源发出的光的至少一部分进行对称;第一分束器，被配置为将由ISM处理的光的第一部分沿着 一个或多个样本的表面的物体路径和沿着基准路径由ISM处理的光的第二部分以及沿着主光轴布置的检测器，其中检测器被配置为收集从表面反射的光的一部分 的一个或多个标本。
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公开(公告)号：US20120033226A1
公开(公告)日：2012-02-09
申请号：US13188623
申请日：2011-07-22
申请人： Amnon Manassen , Daniel Kandel , Moshe Baruch , Joel L. Seligson , Alexander Svizher , Guy Cohen , Efraim Rotem , Ohad Bachar , Daria Negri , Noam Sapiens
发明人： Amnon Manassen , Daniel Kandel , Moshe Baruch , Joel L. Seligson , Alexander Svizher , Guy Cohen , Efraim Rotem , Ohad Bachar , Daria Negri , Noam Sapiens
CPC分类号： G03F7/70633 , G01N21/55 , G03F7/70616
摘要： The present invention includes an illumination source, at least one illumination symmetrization module (ISM) configured to symmetrize at least a portion of light emanating from the illumination source, a first beam splitter configured to direct a first portion of light processed by the ISM along an object path to a surface of one or more specimens and a second portion of light processed by the ISM along a reference path, and a detector disposed along a primary optical axis, wherein the detector is configured to collect a portion of light reflected from the surface of the one or more specimens.
摘要翻译： 本发明包括照明源，至少一个照明对称化模块（ISM），被配置为对来自照明源发出的光的至少一部分进行对称;第一分束器，被配置为将由ISM处理的光的第一部分沿着 一个或多个样本的表面的物体路径和沿着基准路径由ISM处理的光的第二部分以及沿着主光轴布置的检测器，其中检测器被配置为收集从表面反射的光的一部分 的一个或多个标本。
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公开(公告)号：US07242477B2
公开(公告)日：2007-07-10
申请号：US10785430
申请日：2004-02-23
申请人： Walter D. Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael E. Adel , Mark Ghinovker , Christopher F. Bevis , Noam Knoll , Moshe Baruch
发明人： Walter D. Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael E. Adel , Mark Ghinovker , Christopher F. Bevis , Noam Knoll , Moshe Baruch
IPC分类号： G01B11/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed is a method for determining an overlay error between at least two layers in a multiple layer sample. A sample having a plurality of periodic targets that each have a first structure in a first layer and a second structure in a second layer is provided. There are predefined offsets between the first and second structures. Using a scatterometry overlay metrology, scatterometry overlay data is obtained from a first set of the periodic targets based on one or more measured optical signals from the first target set on the sample. Using an imaging overlay metrology, imaging overlay data is obtained from a second set of the periodic targets based on one or more image(s) from the second target set on the sample.
摘要翻译： 公开了一种用于确定多层样品中至少两层之间的覆盖误差的方法。 提供具有多个周期性靶的样品，每个周期性靶在第一层中具有第一结构，在第二层中具有第二结构。 在第一和第二结构之间有预定义的偏移。 使用散射测绘重叠测量，基于来自样品上的第一目标组的一个或多个测量光信号，从第一组周期性目标获得散点测绘覆盖数据。 使用成像覆盖度量，基于来自样品上的第二目标集的一个或多个图像，从第二组周期性目标获得成像覆盖数据。
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