公开(公告)号：US09927718B2

公开(公告)日：2018-03-27

申请号：US13186144

申请日：2011-07-19

Applicant: Daniel Kandel ,  Vladimir Levinski ,  Guy Cohen

Inventor： Daniel Kandel ,  Vladimir Levinski ,  Guy Cohen

IPC: G01J4/00 ,  G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70683

Abstract: A multi-layer overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, each target structure being invariant to N degree rotation about the common center of symmetry, wherein N is equal to or greater than 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is invariant to M degree rotation about the individual center of symmetry, wherein M is equal to or greater than 180 degrees.

公开(公告)号：US09164397B2

公开(公告)日：2015-10-20

申请号：US13188623

申请日：2011-07-22

Applicant: Amnon Manassen ,  Daniel Kandel ,  Moshe Baruch ,  Joel L. Seligson ,  Alexander Svizher ,  Guy Cohen ,  Efraim Rotem ,  Ohad Bachar ,  Daria Negri ,  Noam Sapiens

Inventor： Amnon Manassen ,  Daniel Kandel ,  Moshe Baruch ,  Joel L. Seligson ,  Alexander Svizher ,  Guy Cohen ,  Efraim Rotem ,  Ohad Bachar ,  Daria Negri ,  Noam Sapiens

IPC: G01B9/02 ,  G03F7/20 ,  G01N21/55

CPC classification number: G03F7/70633 ,  G01N21/55 ,  G03F7/70616

Abstract: The present invention includes an illumination source, at least one illumination symmetrization module (ISM) configured to symmetrize at least a portion of light emanating from the illumination source, a first beam splitter configured to direct a first portion of light processed by the ISM along an object path to a surface of one or more specimens and a second portion of light processed by the ISM along a reference path, and a detector disposed along a primary optical axis, wherein the detector is configured to collect a portion of light reflected from the surface of the one or more specimens.

Abstract translation: 本发明包括照明源，至少一个照明对称化模块（ISM），被配置为对来自照明源发出的光的至少一部分进行对称;第一分束器，被配置为将由ISM处理的光的第一部分沿着 一个或多个样本的表面的物体路径和沿着基准路径由ISM处理的光的第二部分以及沿着主光轴布置的检测器，其中检测器被配置为收集从表面反射的光的一部分 的一个或多个标本。

公开(公告)号：US08908175B1

公开(公告)日：2014-12-09

申请号：US11521118

申请日：2006-09-13

Applicant: Daniel Kandel ,  Michael Adel ,  Joel Seligson ,  Boris Golovanevsky

Inventor： Daniel Kandel ,  Michael Adel ,  Joel Seligson ,  Boris Golovanevsky

IPC: G01N21/00

CPC classification number: G01N21/211

Abstract: A scatterometry tool including an illumination source for directing a light beam into a first optical beam shaping and positioning element at an illumination pupil plane of the tool where the light beam is modulated and directed to an objective lens system having a high numerical aperture. The objective receiving the modulated light beam and directing it onto a target to generate a scattering signal. The objective lens collects the scattering signal and directs it to a second optical beam shaping and positioning element at a collection pupil plane where the signal is modulated and then directed to detectors for receiving and processing the signal to determine surface characteristics of the target.

Abstract translation: 散射测量工具，其包括用于将光束引导到工具的照明光瞳平面处的第一光束成形和定位元件的照明源，其中光束被调制并被引导到具有高数值孔径的物镜系统。 接收调制光束并将其引导到目标上以产生散射信号的目的。 物镜收集散射信号，并将其引导到收集光瞳平面处的第二光束整形和定位元件，信号被调制，然后被引导到检测器以接收和处理信号以确定目标的表面特性。

公开(公告)号：US20130035888A1

公开(公告)日：2013-02-07

申请号：US13508495

申请日：2012-04-04

Applicant: Daniel Kandel ,  Guy Cohen ,  Dana Klein ,  Vladimir Levinski ,  Noam Sapiens ,  Alex Shulman ,  Vladimir Kamenetsky ,  Eran Amit ,  Irina Vakshtein

Inventor： Daniel Kandel ,  Guy Cohen ,  Dana Klein ,  Vladimir Levinski ,  Noam Sapiens ,  Alex Shulman ,  Vladimir Kamenetsky ,  Eran Amit ,  Irina Vakshtein

IPC: G01N37/00 ,  G06F19/00

Abstract: The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.

Abstract translation: 本发明可以包括从分布在许多晶片的晶片的一个或多个场上的多个测量目标获取多个覆盖度量测量信号，为多个覆盖度量测量信号中的每一个确定多个重叠估计 使用多个覆盖算法，生成多个覆盖估计分布，以及利用所生成的多个覆盖估计分布来生成第一多个质量度量，其中每个质量度量对应于所生成的多个覆盖估计分布的一个覆盖估计分布 每个质量度量是对应的生成的重叠估计分布的宽度的函数，每个质量度量还是来自相关度量目标的覆盖度量测量信号中存在的不对称的函数。

公开(公告)号：US20120022679A1

公开(公告)日：2012-01-26

申请号：US13156865

申请日：2011-06-09

Applicant: DongSub Choi ,  Amir Widmann ,  Daniel Kandel ,  David Tien

Inventor： DongSub Choi ,  Amir Widmann ,  Daniel Kandel ,  David Tien

IPC: G06F19/00

CPC classification number: G03F7/70525

Abstract: A method for automatic process control (APC) performance monitoring may include, but is not limited to: computing one or more APC performance indicators for one or more production lots of semiconductor devices; and displaying a mapping of the one or more APC performance indicators to the one or more production lots of semiconductor devices.

Abstract translation: 用于自动过程控制（APC）性能监控的方法可以包括但不限于：计算一个或多个生产批次的半导体器件的一个或多个APC性能指标; 以及显示所述一个或多个APC性能指示符到所述一个或多个半导体器件的生产批次的映射。

公开(公告)号：US07602491B2

公开(公告)日：2009-10-13

申请号：US12108364

申请日：2008-04-23

Applicant: Daniel Kandel ,  Vladimir Levinski ,  Michael Adel ,  Joel Seligson

Inventor： Daniel Kandel ,  Vladimir Levinski ,  Michael Adel ,  Joel Seligson

IPC: G01B11/00 ,  G01B11/02 ,  G06K9/00

CPC classification number: G01B11/272 ,  G03F7/70633

Abstract: A resultant image of a grating target may be obtained by dividing an image of the target into first and second portions and optically modifying the first and/or second portion such that a final image formed from their combination is characterized by a Moiré pattern. The resultant image may be analyzed to determine a shift in the grating target from a shift in the Moiré pattern. Optical alignment apparatus may include a first beam splitter, an image transformation element optically coupled to the first beam splitter, and a second beam splitter. The first beam splitter divides an image of a grating target into first and second portions. The second beam splitter combines the first portion and the second portion. The image transformation element optically modifies the first and/or second portion such that a final image formed from their combination is characterized by a Moiré pattern.

Abstract translation: 可以通过将目标图像划分成第一和第二部分并光学地修改第一和/或第二部分使得由其组合形成的最终图像由莫尔图案表征来获得光栅目标的合成图像。 可以分析所得到的图像以确定光栅目标从莫尔图案的偏移中的偏移。 光学对准装置可以包括第一分束器，光耦合到第一分束器的图像变换元件和第二分束器。 第一分束器将光栅靶的图像分成第一和第二部分。 第二分束器组合第一部分和第二部分。 图像变换元件光学地修改第一和/或第二部分，使得由它们的组合形成的最终图像的特征在于莫尔图案。

公开(公告)号：US07528941B2

公开(公告)日：2009-05-05

申请号：US11754892

申请日：2007-05-29

Applicant: Daniel Kandel ,  Vladimir Levinski ,  Michael E. Adel ,  Joel L. Seligson

Inventor： Daniel Kandel ,  Vladimir Levinski ,  Michael E. Adel ,  Joel L. Seligson

IPC: G01N21/00

CPC classification number: G03F7/70633

Abstract: Disclosed are apparatus and methods for measuring a characteristic, such as overlay, of a semiconductor target. In general, order-selected imaging and/or illumination is performed while collecting an image from a target using a metrology system. In one implementation, tunable spatial modulation is provided only in the imaging path of the system. In other implementations, tunable spatial modulation is provided in both the illumination and imaging paths of the system. In a specific implementation, tunable spatial modulation is used to image side-by-side gratings with diffraction orders ±n. The side-by-side gratings may be in different layers or the same layer of a semiconductor wafer. The overlay between the structures is typically found by measuring the distance between centers symmetry of the gratings. In this embodiment, only orders ±n for a given choice of n (where n is an integer and not equal to zero) are selected, and the gratings are only imaged with these diffraction orders.

Abstract translation: 公开了用于测量半导体靶的特性（例如覆盖）的装置和方法。 通常，在使用度量系统从目标物收集图像的同时执行顺序选择的成像和/或照明。 在一个实现中，仅在系统的成像路径中提供可调谐空间调制。 在其他实施方式中，在系统的照明和成像路径中提供可调谐的空间调制。 在具体实现中，可调谐空间调制用于以衍射级±n对并行光栅进行成像。 并排光栅可以在不同的层或相同的半导体晶片层中。 通常通过测量光栅的中心对称性之间的距离来发现结构之间的覆盖。 在本实施例中，对于给定的n（其中n是整数且不等于零）的选择，仅选择±n，并且光栅仅以这些衍射级成像。

公开(公告)号：US20070229829A1

公开(公告)日：2007-10-04

申请号：US11525320

申请日：2006-09-21

Applicant: Daniel Kandel ,  Walter D. Mieher ,  Boris Golovanevsky

Inventor： Daniel Kandel ,  Walter D. Mieher ,  Boris Golovanevsky

IPC: G01B11/00

CPC classification number: G03F7/70633

Abstract: Embodiments of the invention include a scatterometry target for use in determining the alignment between substrate layers. A target arrangement is formed on a substrate and comprises a plurality of target cells. Each cell has two layers of periodic features constructed such that an upper layer is arranged above a lower layer and configured so that the periodic features of the upper layer have an offset and/or different pitch than periodic features of the lower layer. The pitches are arranged to generate a periodic signal when the target is exposed to an illumination source. The target also includes disambiguation features arranged between the cells and configured to resolve ambiguities caused by the periodic signals generated by the cells when exposed to the illumination source.

Abstract translation: 本发明的实施例包括用于确定衬底层之间的对准的散射仪。 目标装置形成在基板上并且包括多个目标单元。 每个单元具有两层周期性特征，其被构造为使得上层布置在下层上方并且被配置为使得上层的周期特征具有与下层的周期特征相比偏移和/或不同的间距。 当目标暴露于照明源时，间距被布置成产生周期性信号。 目标还包括布置在单元之间的消歧特征，并被配置为解决由暴露于照明源时由单元产生的周期性信号引起的模糊。

公开(公告)号：US20070096094A1

公开(公告)日：2007-05-03

申请号：US11329716

申请日：2006-01-10

Applicant: Vladimir Levinski ,  Michael Adel ,  Aviv Frommer ,  Daniel Kandel

Inventor： Vladimir Levinski ,  Michael Adel ,  Aviv Frommer ,  Daniel Kandel

IPC: H01L23/58 ,  H01L21/66

CPC classification number: H01L23/544 ,  G03F7/70633 ,  H01L22/12 ,  H01L2223/54453 ,  H01L2223/5448 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and apparatus for fabricating a semiconductor die including several target structures. A first layer is formed that includes one or more line or trench structures that extend in a first direction. A second layer is formed that includes one or more line or trench structures that extend in a second direction that is perpendicular to the first structure, such that a projection of the target structure along the first direction is independent of the second direction and a projection of the target structure along the second direction is independent of the first direction. A target structure and a method for generating a calibration curve are also described.

Abstract translation: 用于制造包括几个目标结构的半导体管芯的方法和装置。 形成第一层，其包括在第一方向上延伸的一个或多个线或沟槽结构。 形成第二层，其包括在垂直于第一结构的第二方向上延伸的一个或多个线或沟槽结构，使得目标结构沿着第一方向的突起独立于第二方向和投影 沿着第二方向的目标结构与第一方向无关。 还描述了用于产生校准曲线的目标结构和方法。

公开(公告)号：US09620426B2

公开(公告)日：2017-04-11

申请号：US13018729

申请日：2011-02-01

Applicant: Pavel Izikson ,  John Robinson ,  Daniel Kandel

Inventor： Pavel Izikson ,  John Robinson ,  Daniel Kandel

IPC: G01N37/00 ,  H01L21/66

CPC classification number: H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention may include performing a first measurement on a wafer of a first lot of wafers via an omniscient sampling process, calculating a first set of process tool correctables utilizing one or more results of the measurement performed via an omniscient sampling process, randomly selecting a set of field sampling locations of the wafer of a first lot of wafers, calculating a second set of process tool correctables by applying an interpolation process to the randomly selected set of field sampling locations, wherein the interpolation process utilizes values from the first set of process tool correctables for the randomly selected set of field sampling locations in order to calculate correctables for fields of the wafer of the first lot not included in the set of randomly selected fields, and determining a sub-sampling scheme by comparing the first set of process tool correctables to the second set of correctables.