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    OVERLAY METROLOGY BY PUPIL PHASE ANALYSIS
    1.
    发明申请
    OVERLAY METROLOGY BY PUPIL PHASE ANALYSIS 有权
    通过相位分析的覆盖度量

    公开(公告)号：US20130044331A1

    公开(公告)日：2013-02-21

    申请号：US13209778

    申请日：2011-08-15

    申请人： Amnon Manassen ,  Daniel Kandel ,  Moshe Baruch ,  Vladimir Levinski ,  Noam Sapiens ,  Joel Seligson ,  Andy Hill ,  Ohad Bachar ,  Daria Negri ,  Ofer Zaharan

    发明人： Amnon Manassen ,  Daniel Kandel ,  Moshe Baruch ,  Vladimir Levinski ,  Noam Sapiens ,  Joel Seligson ,  Andy Hill ,  Ohad Bachar ,  Daria Negri ,  Ofer Zaharan

    IPC分类号： G01B11/14 ,  G01B11/26

    CPC分类号： G03F7/70633

    摘要： The present invention may include measuring a first phase distribution across a pupil plane of a portion of illumination reflected from a first overlay target of a semiconductor wafer, wherein the first overlay target is fabricated to have a first intentional overlay, measuring a second phase distribution across the pupil plane of a portion of illumination reflected from a second overlay target, wherein the second overlay target is fabricated to have a second intentional overlay in a direction opposite to and having the same magnitude as the first intentional overlay, determining a first phase tilt associated with a sum of the first and second phase distributions, determining a second phase tilt associated with a difference between the first and second phase distributions, calibrating a set of phase tilt data, and determining a test overlay value associated with the first and second overlay target.

    摘要翻译： 本发明可以包括测量跨越从半导体晶片的第一覆盖目标反射的照明部分的光瞳平面的第一相分布，其中第一覆盖目标被制造为具有第一有意覆盖，测量第二相位分布 从第二覆盖目标反射的照明部分的光瞳平面，其中第二覆盖目标被制造为具有与第一有意重叠相反并具有相同幅度的方向的第二有意覆盖，确定相关联的第一相位倾斜 具有第一和第二相位分布的总和，确定与第一和第二相位分布之间的差相关联的第二相位倾斜，校准一组相位倾斜数据，以及确定与第一和第二覆盖目标相关联的测试覆盖值 。

    Overlay metrology by pupil phase analysis
    2.
    发明授权
    Overlay metrology by pupil phase analysis 有权
    通过瞳孔相位分析覆盖度量

    公开(公告)号：US08582114B2

    公开(公告)日：2013-11-12

    申请号：US13209778

    申请日：2011-08-15

    申请人： Amnon Manassen ,  Daniel Kandel ,  Moshe Baruch ,  Vladimir Levinski ,  Noam Sapiens ,  Joel Seligson ,  Andy Hill ,  Ohad Bachar ,  Daria Negri ,  Ofer Zaharan

    发明人： Amnon Manassen ,  Daniel Kandel ,  Moshe Baruch ,  Vladimir Levinski ,  Noam Sapiens ,  Joel Seligson ,  Andy Hill ,  Ohad Bachar ,  Daria Negri ,  Ofer Zaharan

    IPC分类号： G01B11/02

    CPC分类号： G03F7/70633

    摘要： The present invention may include measuring a first phase distribution across a pupil plane of a portion of illumination reflected from a first overlay target of a semiconductor wafer, wherein the first overlay target is fabricated to have a first intentional overlay, measuring a second phase distribution across the pupil plane of a portion of illumination reflected from a second overlay target, wherein the second overlay target is fabricated to have a second intentional overlay in a direction opposite to and having the same magnitude as the first intentional overlay, determining a first phase tilt associated with a sum of the first and second phase distributions, determining a second phase tilt associated with a difference between the first and second phase distributions, calibrating a set of phase tilt data, and determining a test overlay value associated with the first and second overlay target.

    摘要翻译： 本发明可以包括测量跨越从半导体晶片的第一覆盖目标反射的照明部分的光瞳平面的第一相分布，其中第一覆盖目标被制造为具有第一有意覆盖，测量第二相位分布 从第二覆盖目标反射的照明部分的光瞳平面，其中第二覆盖目标被制造为具有与第一有意重叠相反并具有相同幅度的方向的第二有意覆盖，确定相关联的第一相位倾斜 具有第一和第二相位分布的总和，确定与第一和第二相位分布之间的差相关联的第二相位倾斜，校准一组相位倾斜数据，以及确定与第一和第二覆盖目标相关联的测试覆盖值 。

    Angle-resolved antisymmetric scatterometry
    10.
    发明授权
    Angle-resolved antisymmetric scatterometry 有权
    角分辨反对称散射法

    公开(公告)号：US08848186B2

    公开(公告)日：2014-09-30

    申请号：US13386524

    申请日：2010-07-21

    申请人： Daniel Kandel ,  Vladimir Levinski ,  Noam Sapiens

    发明人： Daniel Kandel ,  Vladimir Levinski ,  Noam Sapiens

    IPC分类号： G01B11/00 ,  G01J4/00 ,  G03F7/20 ,  G01B11/24 ,  G01N21/956

    CPC分类号： G01N21/95607 ,  G01B11/14 ,  G01B11/24 ,  G01B2210/56 ,  G03F7/70633

    摘要： A method for determining an overlay offset may include, but is not limited to: obtaining a first anti-symmetric differential signal (ΔS1) associated with a first scatterometry cell; obtaining a second anti-symmetric differential signal (ΔS2) associated with a second scatterometry cell and computing an overlay offset from the first anti-symmetric differential (ΔS1) signal associated with the first scatterometry cell and the second anti-symmetric differential signal (ΔS2) associated with the second scatterometry cell.

    摘要翻译： 用于确定覆盖偏移的方法可以包括但不限于：获得与第一散射测量单元相关联的第一反对称差分信号（＆Dgr; S1）; 获得与第二散射测量单元相关联的第二反对称差分信号（＆Dgr; S2），并计算与第一散射测量单元和第二反对称差分相关联的第一反对称差分（＆Dgr; S1）信号的叠加偏移 与第二散射测量单元相关联的信号（＆Dgr; S2）。