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公开(公告)号:US06399666B1
公开(公告)日:2002-06-04
申请号:US09238357
申请日:1999-01-27
申请人: Craig Jon Hawker , James Lupton Hedrick , Andreas Heise , David Mecerreyes , Robert Dennis Miller , Olof Mikael Trollsås
发明人: Craig Jon Hawker , James Lupton Hedrick , Andreas Heise , David Mecerreyes , Robert Dennis Miller , Olof Mikael Trollsås
IPC分类号: C08J900
CPC分类号: H01L23/5329 , H01L21/312 , H01L21/31695 , H01L21/7682 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要: The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polysilica.
摘要翻译: 本发明涉及一种形成集成电路器件的方法,该器件包括:(i)衬底; (ii)位于基板上的金属电路线,和(iii)位于电路线上的电介质材料。 电介质材料包括多孔有机聚硅氧烷。