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Patent Agency Ranking
公开(公告)号：US08576374B2
公开(公告)日：2013-11-05
申请号：US12393805
申请日：2009-02-26
Applicant: Keith Frank Best , Henricus Wilhelmus Maria Van Buel , Cheng-Qun Gui , Johannes Onvlee , Rudy Jan Maria Pellens , Remi Daniel Marie Edart , Oleg Viacheslavovich Voznyi , Pascale Anne Maury
Inventor： Keith Frank Best , Henricus Wilhelmus Maria Van Buel , Cheng-Qun Gui , Johannes Onvlee , Rudy Jan Maria Pellens , Remi Daniel Marie Edart , Oleg Viacheslavovich Voznyi , Pascale Anne Maury
CPC classification number: G03F9/7084 , G03F7/70633 , G03F9/7076 , G03F9/708 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
Abstract: According to a first aspect of the invention, there is provided a lithographic method of providing an alignment mark on a layer provided on a substrate, the method including providing the alignment mark on an area of the layer which is oriented within a certain range of angles with respect to a surface of the substrate on which the layer is provided.
Abstract translation: 根据本发明的第一方面，提供了一种在设置在基板上的层上提供对准标记的光刻方法，所述方法包括在所述层的一定范围内定向的区域上提供对准标记 相对于其上设置有该层的基板的表面。
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公开(公告)号：US20100252960A1
公开(公告)日：2010-10-07
申请号：US12749823
申请日：2010-03-30
Applicant: Nikolay Iosad , Pascale Anne Maury
Inventor： Nikolay Iosad , Pascale Anne Maury
CPC classification number: G03F7/0002 , B82Y10/00 , B82Y40/00
Abstract: An imprint lithography apparatus is disclosed that includes a first imprint template provided with pattern recesses and a second imprint template provided with pattern recesses, wherein the pattern recesses of the first imprint template are configured to form features on a substrate which interconnect laterally with features formed by the pattern recesses of the second imprint template, and wherein the pattern recesses of the second imprint template have a critical dimension which is three or more times greater than the critical dimension of the pattern recesses of the first imprint template.
Abstract translation: 公开了一种压印光刻设备，其包括设置有图案凹部的第一印记模板和设置有图案凹部的第二印模模板，其中第一印模模板的图案凹槽被配置为在基板上形成特征，该基板横向互连， 第二印模模板的图形凹部，并且其中第二印模模板的图案凹部的临界尺寸比第一印模模板的图案凹槽的临界尺寸大三倍或更多倍。
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公开(公告)号：US20090237635A1
公开(公告)日：2009-09-24
申请号：US12393805
申请日：2009-02-26
Applicant: Keith Frank Best , Henricus Wilhelmus Maria Van Buel , Cheng-Qun Gui , Johannes Onvlee , Rudy Jan Maria Pellens , Remi Daniel Marie Edart , Oleg Viacheslavovich Voznyi , Pascale Anne Maury
Inventor： Keith Frank Best , Henricus Wilhelmus Maria Van Buel , Cheng-Qun Gui , Johannes Onvlee , Rudy Jan Maria Pellens , Remi Daniel Marie Edart , Oleg Viacheslavovich Voznyi , Pascale Anne Maury
CPC classification number: G03F9/7084 , G03F7/70633 , G03F9/7076 , G03F9/708 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
Abstract: According to a first aspect of the invention, there is provided a lithographic method of providing an alignment mark on a layer provided on a substrate, the method including providing the alignment mark on an area of the layer which is oriented within a certain range of angles with respect to a surface of the substrate on which the layer is provided.
Abstract translation: 根据本发明的第一方面，提供了一种在设置在基板上的层上提供对准标记的光刻方法，所述方法包括在所述层的一定范围内定向的区域上提供对准标记 相对于其上设置有该层的基板的表面。
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公开(公告)号：US20090153825A1
公开(公告)日：2009-06-18
申请号：US12273816
申请日：2008-11-19
Applicant: Remi Daniel Marie EDART , Franciscus Godefridus Casper Bijnen , Rudy Jan Maria Pellens , Pascale Anne Maury
Inventor： Remi Daniel Marie EDART , Franciscus Godefridus Casper Bijnen , Rudy Jan Maria Pellens , Pascale Anne Maury
CPC classification number: G03F9/7049 , G03F7/70633 , G03F9/7065 , G03F9/7088
Abstract: A lithographic alignment apparatus includes a radiation source arranged to generate radiation at a wavelength of 1000 nanometers or longer, and a plurality of non-imaging detectors arranged to detect the radiation after the radiation has been reflected by an alignment mark.
Abstract translation: 光刻对准装置包括布置成产生1000纳米或更长波长的辐射的辐射源，以及布置成在放射线被对准标记反射之后检测辐射的多个非成像检测器。
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公开(公告)号：US09274418B2
公开(公告)日：2016-03-01
申请号：US12749823
申请日：2010-03-30
Applicant: Nikolay Iosad , Pascale Anne Maury
Inventor： Nikolay Iosad , Pascale Anne Maury
CPC classification number: G03F7/0002 , B82Y10/00 , B82Y40/00
Abstract: An imprint lithography apparatus is disclosed that includes a first imprint template provided with pattern recesses and a second imprint template provided with pattern recesses, wherein the pattern recesses of the first imprint template are configured to form features on a substrate which interconnect laterally with features formed by the pattern recesses of the second imprint template, and wherein the pattern recesses of the second imprint template have a critical dimension which is three or more times greater than the critical dimension of the pattern recesses of the first imprint template.
Abstract translation: 公开了一种压印光刻设备，其包括设置有图案凹部的第一印记模板和设置有图案凹部的第二印模模板，其中第一印模模板的图案凹槽被配置为在基板上形成特征，该基板横向互连， 第二印模模板的图形凹部，并且其中第二印模模板的图案凹部的临界尺寸比第一印模模板的图案凹槽的临界尺寸大三倍或更多倍。
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