公开(公告)号：US5691248A

公开(公告)日：1997-11-25

申请号：US507186

申请日：1995-07-26

申请人： John Edward Cronin ,  Wayne John Howell ,  Howard Leo Kalter ,  Patricia Ellen Marmillion ,  Anthony Palagonia ,  Bernadette Ann Pierson ,  Dennis Arthur Schmidt

发明人： John Edward Cronin ,  Wayne John Howell ,  Howard Leo Kalter ,  Patricia Ellen Marmillion ,  Anthony Palagonia ,  Bernadette Ann Pierson ,  Dennis Arthur Schmidt

IPC分类号： H01L21/304 ,  H01L21/301 ,  H01L21/78 ,  H01L21/98 ,  H01L25/065 ,  H01L21/302

CPC分类号： H01L25/50 ,  H01L21/78 ,  H01L25/0657 ,  H01L2224/24145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2924/10253 ,  Y10S148/028 ,  Y10S438/977

摘要： Integrated Circuit ("IC") chips are formed with precisely defined edges and sizing. At the wafer processing level, trenches are lithographically etched in the kerf regions to define the edges of the IC chips on the wafer. The trenches are filled with insulating material, and upper level wiring and metallization is completed for the IC chips on the wafer. Further trenches are defined down to the filled previously formed trenches. The wafer is thinned from its bottom up to the filled trenches, and the insulating material therein is removed to separate the individual IC chips from the wafer. The precision of IC chip edge definition facilitates forming the IC chips into stacks more easily because many stack level alignment processes become unnecessary.

摘要翻译： 集成电路（“IC”）芯片具有精确定义的边缘和尺寸。 在晶片处理级别，在切口区域中光刻地蚀刻沟槽，以限定晶片上的IC芯片的边缘。 沟槽填充有绝缘材料，并且晶片上的IC芯片完成了上层布线和金属化。 另外的沟槽被定义为填充的先前形成的沟槽。 将晶片从其底部减薄到填充的沟槽，并且去除其中的绝缘材料以将各个IC芯片与晶片分离。 IC芯片边缘定义的精度有助于将IC芯片更容易地堆叠成堆栈，因为不需要许多堆叠级对准过程。

公开(公告)号：US5651857A

公开(公告)日：1997-07-29

申请号：US525269

申请日：1995-09-08

申请人： John Edward Cronin ,  Patricia Ellen Marmillion ,  Anthony Palagonia ,  Bernadette Ann Pierson ,  Dennis Arthur Schmidt

发明人： John Edward Cronin ,  Patricia Ellen Marmillion ,  Anthony Palagonia ,  Bernadette Ann Pierson ,  Dennis Arthur Schmidt

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L21/033 ,  H01L21/329 ,  H01L21/336 ,  H01L21/3105

CPC分类号： H01L28/40 ,  H01L21/0337 ,  H01L29/66166 ,  H01L29/66659 ,  Y10S438/947

摘要： Improved film spacers for the sidewalls within semiconductor structures are disclosed. The spacers are made of non-conformal, organic materials, such as polyimides, acrylates, methacrylates, and various photoresist compositions. They are formed on the sidewalls by a process which involves the formation of overhang structures. The film spacers may be used for a variety of applications, such as sidewall imaging, control of dopant diffusion in an FET, formation of borderless contacts, and the manufacture of a resistor from an FET.

摘要翻译： 公开了用于半导体结构内的侧壁的改进的膜间隔物。 间隔件由非共形有机材料制成，例如聚酰亚胺，丙烯酸酯，甲基丙烯酸酯和各种光致抗蚀剂组合物。 它们通过涉及形成悬垂结构的方法形成在侧壁上。 膜间隔物可以用于各种应用，例如侧壁成像，FET中掺杂剂扩散的控制，无边界接触的形成以及来自FET的电阻器的制造。

公开(公告)号：US5925924A

公开(公告)日：1999-07-20

申请号：US843177

申请日：1997-04-14

申请人： John Edward Cronin ,  Wayne John Howell ,  Howard Leo Kalter ,  Patricia Ellen Marmillion ,  Anthony Palagonia ,  Bernadette Ann Pierson ,  Dennis Arthur Schmidt

发明人： John Edward Cronin ,  Wayne John Howell ,  Howard Leo Kalter ,  Patricia Ellen Marmillion ,  Anthony Palagonia ,  Bernadette Ann Pierson ,  Dennis Arthur Schmidt

IPC分类号： H01L21/304 ,  H01L21/301 ,  H01L21/78 ,  H01L21/98 ,  H01L25/065 ,  H01L29/06

CPC分类号： H01L25/50 ,  H01L21/78 ,  H01L25/0657 ,  H01L2224/24145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2924/10253 ,  Y10S148/028 ,  Y10S438/977

摘要： Integrated Circuit ("IC") chips are formed with precisely defined edges and sizing. At the wafer processing level, trenches are lithographically etched in the kerf regions to define the edges of the IC chips on the wafer. The trenches are filled with insulating material, and upper level wiring and metallization is completed for the IC chips on the wafer. Further trenches are defined down to the filled previously formed trenches. The wafer is thinned from its bottom up to the filled trenches, and the insulating material therein is removed to separate the individual IC chips from the wafer. The precision of IC chip edge definition facilitates forming the IC chips into stacks more easily because many stack level alignment processes become unnecessary.

摘要翻译： 集成电路（“IC”）芯片具有精确定义的边缘和尺寸。 在晶片处理级别，在切口区域中光刻地蚀刻沟槽，以限定晶片上的IC芯片的边缘。 沟槽填充有绝缘材料，并且晶片上的IC芯片完成了上层布线和金属化。 另外的沟槽被定义为填充的先前形成的沟槽。 将晶片从其底部减薄到填充的沟槽，并且去除其中的绝缘材料以将各个IC芯片与晶片分离。 IC芯片边缘定义的精度有助于将IC芯片更容易地堆叠成堆栈，因为不需要许多堆叠级对准过程。