公开(公告)号：US06251787B1

公开(公告)日：2001-06-26

申请号：US09514867

申请日：2000-02-28

申请人： Daniel C. Edelstein ,  Wilma J. Horkans ,  Stephen E. Luce ,  Naftall E. Lustig ,  Keith R. Pope ,  Peter D. Roper

发明人： Daniel C. Edelstein ,  Wilma J. Horkans ,  Stephen E. Luce ,  Naftall E. Lustig ,  Keith R. Pope ,  Peter D. Roper

IPC分类号： H01L2100

CPC分类号： B24B37/34 ,  B24B49/12 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/67028

摘要： Eliminating exposure of PN junctions to light capable of invoking a photovoltaic effect and/or inhibiting the oxidation and reduction reactions induced by the photovoltaic effect prevents the electrochemical dissolution of metal components on semiconductor devices by electrolysis. A darkened enclosure for use on tools for wafer CMP, brush cleaning, unloading, and rinsing will eliminate exposure. Alternatively, illumination of a semiconductor wafer can be limited to wavelengths of light that do not provide enough energy to induce a photovoltaic effect. An inhibitor in the CMP slurry and/or post-CMP water rinse blocks the oxidation and/or reduction reactions. A blocking agent, such as a high molecular weight surfactant, will interfere with both the oxidation and reduction reactions at the metal surface. Also, a poisoning agent will impede the reduction portion of electrolysis.

摘要翻译： 消除PN结对能够引起光伏效应的光和/或抑制由光电效应引起的氧化和还原反应的光的暴露防止金属组分通过电解电化学溶解在半导体器件上。 用于晶圆CMP，刷子清洁，卸载和冲洗的工具的变暗外壳将消除曝光。 或者，可以将半导体晶片的照明限制在不能提供足够能量以引起光伏效应的光的波长。 CMP浆料中的抑制剂和/或CMP后的水冲洗阻止氧化和/或还原反应。 封闭剂，例如高分子量表面活性剂，将干扰金属表面的氧化和还原反应。 此外，中毒剂会阻碍电解还原部分。

公开(公告)号：US6153043A

公开(公告)日：2000-11-28

申请号：US20010

申请日：1998-02-06

申请人： Daniel C. Edelstein ,  Wilma J. Horkans ,  Stephen E. Luce ,  Naftali E. Lustig ,  Keith R. Pope ,  Peter D. Roper

发明人： Daniel C. Edelstein ,  Wilma J. Horkans ,  Stephen E. Luce ,  Naftali E. Lustig ,  Keith R. Pope ,  Peter D. Roper

IPC分类号： H01L21/304 ,  B24B37/34 ,  B24B49/12 ,  H01L21/00 ,  H01L21/02 ,  H01L21/321 ,  C23F1/02

CPC分类号： B24B37/34 ,  B24B49/12 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/67028

摘要： Eliminating exposure of PN junctions to light capable of invoking a photovoltaic effect and/or inhibiting the oxidation and reduction reactions induced by the photovoltaic effect prevents the electrochemical dissolution of metal components on semiconductor devices by electrolysis. A darkened enclosure for use on tools for wafer CMP, brush cleaning, unloading, and rinsing will eliminate exposure. Alternatively, illumination of a semiconductor wafer can be limited to wavelengths of light that do not provide enough energy to induce a photovoltaic effect. An inhibitor in the CMP slurry and/or post-CMP water rinse blocks the oxidation and/or reduction reactions. A blocking agent, such as a high molecular weight surfactant, will interfere with both the oxidation and reduction reactions at the metal surface. Also, a poisoning agent will impede the reduction portion of electrolysis.

摘要翻译： 消除PN结对能够引起光伏效应的光和/或抑制由光电效应引起的氧化和还原反应的光的暴露防止金属组分通过电解电化学溶解在半导体器件上。 用于晶圆CMP，刷子清洁，卸载和冲洗的工具的变暗外壳将消除曝光。 或者，可以将半导体晶片的照明限制在不能提供足够能量以引起光伏效应的光的波长。 CMP浆料中的抑制剂和/或CMP后的水冲洗阻止氧化和/或还原反应。 封闭剂，例如高分子量表面活性剂，将干扰金属表面的氧化和还原反应。 此外，中毒剂会阻碍电解还原部分。