公开(公告)号：US6153043A

公开(公告)日：2000-11-28

申请号：US20010

申请日：1998-02-06

申请人： Daniel C. Edelstein ,  Wilma J. Horkans ,  Stephen E. Luce ,  Naftali E. Lustig ,  Keith R. Pope ,  Peter D. Roper

发明人： Daniel C. Edelstein ,  Wilma J. Horkans ,  Stephen E. Luce ,  Naftali E. Lustig ,  Keith R. Pope ,  Peter D. Roper

IPC分类号： H01L21/304 ,  B24B37/34 ,  B24B49/12 ,  H01L21/00 ,  H01L21/02 ,  H01L21/321 ,  C23F1/02

CPC分类号： B24B37/34 ,  B24B49/12 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/67028

摘要： Eliminating exposure of PN junctions to light capable of invoking a photovoltaic effect and/or inhibiting the oxidation and reduction reactions induced by the photovoltaic effect prevents the electrochemical dissolution of metal components on semiconductor devices by electrolysis. A darkened enclosure for use on tools for wafer CMP, brush cleaning, unloading, and rinsing will eliminate exposure. Alternatively, illumination of a semiconductor wafer can be limited to wavelengths of light that do not provide enough energy to induce a photovoltaic effect. An inhibitor in the CMP slurry and/or post-CMP water rinse blocks the oxidation and/or reduction reactions. A blocking agent, such as a high molecular weight surfactant, will interfere with both the oxidation and reduction reactions at the metal surface. Also, a poisoning agent will impede the reduction portion of electrolysis.

摘要翻译： 消除PN结对能够引起光伏效应的光和/或抑制由光电效应引起的氧化和还原反应的光的暴露防止金属组分通过电解电化学溶解在半导体器件上。 用于晶圆CMP，刷子清洁，卸载和冲洗的工具的变暗外壳将消除曝光。 或者，可以将半导体晶片的照明限制在不能提供足够能量以引起光伏效应的光的波长。 CMP浆料中的抑制剂和/或CMP后的水冲洗阻止氧化和/或还原反应。 封闭剂，例如高分子量表面活性剂，将干扰金属表面的氧化和还原反应。 此外，中毒剂会阻碍电解还原部分。

公开(公告)号：US06251787B1

公开(公告)日：2001-06-26

申请号：US09514867

申请日：2000-02-28

申请人： Daniel C. Edelstein ,  Wilma J. Horkans ,  Stephen E. Luce ,  Naftall E. Lustig ,  Keith R. Pope ,  Peter D. Roper

发明人： Daniel C. Edelstein ,  Wilma J. Horkans ,  Stephen E. Luce ,  Naftall E. Lustig ,  Keith R. Pope ,  Peter D. Roper

IPC分类号： H01L2100

CPC分类号： B24B37/34 ,  B24B49/12 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/67028

摘要： Eliminating exposure of PN junctions to light capable of invoking a photovoltaic effect and/or inhibiting the oxidation and reduction reactions induced by the photovoltaic effect prevents the electrochemical dissolution of metal components on semiconductor devices by electrolysis. A darkened enclosure for use on tools for wafer CMP, brush cleaning, unloading, and rinsing will eliminate exposure. Alternatively, illumination of a semiconductor wafer can be limited to wavelengths of light that do not provide enough energy to induce a photovoltaic effect. An inhibitor in the CMP slurry and/or post-CMP water rinse blocks the oxidation and/or reduction reactions. A blocking agent, such as a high molecular weight surfactant, will interfere with both the oxidation and reduction reactions at the metal surface. Also, a poisoning agent will impede the reduction portion of electrolysis.

摘要翻译： 消除PN结对能够引起光伏效应的光和/或抑制由光电效应引起的氧化和还原反应的光的暴露防止金属组分通过电解电化学溶解在半导体器件上。 用于晶圆CMP，刷子清洁，卸载和冲洗的工具的变暗外壳将消除曝光。 或者，可以将半导体晶片的照明限制在不能提供足够能量以引起光伏效应的光的波长。 CMP浆料中的抑制剂和/或CMP后的水冲洗阻止氧化和/或还原反应。 封闭剂，例如高分子量表面活性剂，将干扰金属表面的氧化和还原反应。 此外，中毒剂会阻碍电解还原部分。

公开(公告)号：US06927393B2

公开(公告)日：2005-08-09

申请号：US10320835

申请日：2002-12-16

申请人： John M. Cotte ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  Keith R. Pope ,  Robert J. Purtell ,  John P. Simons ,  Charles J. Taft

发明人： John M. Cotte ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  Keith R. Pope ,  Robert J. Purtell ,  John P. Simons ,  Charles J. Taft

IPC分类号： G01N21/35 ,  G01J5/02

CPC分类号： G01N21/359 ,  G01N21/3504

摘要： A method and apparatus are provided for in situ monitoring and analyzing of process parameters for semiconductor fabrication processes including cleaning semiconductor wafers utilizing a supercritical fluid or a high pressure liquid such as CO2. The method and apparatus utilize a spectrometer having a reflective mirror proximate the vessel holding the high pressure fluid. NIR radiation transmitted into the vessel through a window and out of the vessel through an opposed window is reflected and detected and measured and the composition of the fluid in the pressure vessel is determined allowing the user to control process parameters based on the measured composition.

摘要翻译： 提供了一种用于半导体制造工艺的工艺参数的原位监测和分析的方法和装置，包括利用超临界流体或诸如CO 2的高压液体清洗半导体晶片。 该方法和装置利用具有靠近保持高压流体的容器的反射镜的光谱仪。 通过窗口传输到容器中并通过相对的窗口传出容器的NIR辐射被反射和检测和测量，并且确定压力容器中的流体的组成，允许用户基于测量的组成来控制工艺参数。

公开(公告)号：US06736906B2

公开(公告)日：2004-05-18

申请号：US10120309

申请日：2002-04-10

申请人： John M. Cotte ,  Matteo Flotta ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  Keith R. Pope ,  John P. Simons ,  Charles J. Taft

发明人： John M. Cotte ,  Matteo Flotta ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  Keith R. Pope ,  John P. Simons ,  Charles J. Taft

IPC分类号： B08B300

CPC分类号： B08B7/0021 ,  B08B3/10 ,  B08B13/00

摘要： A workpiece holder for processing a workpiece in a chamber of a liquified fluid. In one embodiment, the workpiece holder includes a cylindrically shaped rotator having an exterior wall and at least one fluid guide on the exterior wall. The rotator is adapted to rotate and provide fluid flow across a first end of the rotator, and is adapted to provide fluid flow and mixing perpendicular to a surface of the first end of the rotator. A fixture is coupled to the first end of the rotator for securing the workpiece to the first end of the rotator.

摘要翻译： 一种用于处理液化液体室中的工件的工件保持器。 在一个实施例中，工件保持器包括具有外壁和在外壁上的至少一个流体引导件的圆柱形旋转器。 旋转器适于旋转并提供流过旋转器的第一端的流体流，并且适于提供垂直于旋转体的第一端的表面的流体流动和混合。 固定装置联接到转子的第一端，用于将工件固定到转子的第一端。

公开(公告)号：US6066267A

公开(公告)日：2000-05-23

申请号：US342710

申请日：1999-06-29

申请人： David L. Rath ,  Rangarajan Jagannathan ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Karen P. Madden ,  Keith R. Pope

发明人： David L. Rath ,  Rangarajan Jagannathan ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Karen P. Madden ,  Keith R. Pope

IPC分类号： H01L21/306 ,  H01L21/308 ,  H01L21/311 ,  H01L21/302

CPC分类号： H01L21/31116

摘要： Silicon nitride is etched employing a composition containing a fluoride containing compound, certain organic solvents, and water.

摘要翻译： 使用含有含氟化合物，某些有机溶剂和水的组合物来蚀刻氮化硅。

公开(公告)号：US5007163A

公开(公告)日：1991-04-16

申请号：US510497

申请日：1990-04-18

申请人： Keith R. Pope ,  Gustav Schrottke

发明人： Keith R. Pope ,  Gustav Schrottke

IPC分类号： H01L21/60 ,  G01R1/067 ,  G01R31/28 ,  H01L21/66 ,  H05K3/34

CPC分类号： H05K3/3436 ,  G01R1/06783 ,  G01R31/2863 ,  H01L2224/16237 ,  H01L2924/01322 ,  H05K2203/162 ,  H05K3/3463 ,  Y02P70/613 ,  Y10T29/49144 ,  Y10T29/49174

摘要： A method of nondestructively testing electronic chips adapted for direct attachment to metallized pads on circuitized substrate is disclosed, wherein an electrically conductive liquid eutectic joint is formed at room temperature with low pressure between electrical terminals on the chip and pads on the substrate. The eutectic joint remains liquid at test temperature, enabling test completion. At the end thereof, chips and pads are separated and any eutectic material residue thereon removed. The eutectic is preferably gallium/indium.

公开(公告)号：US20130210235A1

公开(公告)日：2013-08-15

申请号：US11866232

申请日：2007-10-02

申请人： John P. Simons ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  John M. Cotte ,  Keith R. Pope ,  Charles J. Taft ,  Dario L. Goldfarb

发明人： John P. Simons ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  John M. Cotte ,  Keith R. Pope ,  Charles J. Taft ,  Dario L. Goldfarb

IPC分类号： H01L21/02

CPC分类号： H01L21/02101 ,  B08B7/0021 ,  H01L21/67109 ,  H01L21/67248 ,  Y10S134/902

摘要： A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.

公开(公告)号：US07332436B2

公开(公告)日：2008-02-19

申请号：US10966301

申请日：2004-10-15

申请人： John Michael Cotte ,  Dario L. Goldfarb ,  Pamela Jones ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  Keith R. Pope ,  John P. Simons ,  Charles J. Taft

发明人： John Michael Cotte ,  Dario L. Goldfarb ,  Pamela Jones ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  Keith R. Pope ,  John P. Simons ,  Charles J. Taft

IPC分类号： H01L21/302 ,  C09K13/00

CPC分类号： H01L21/02071 ,  B08B7/0021 ,  C11D7/08 ,  C11D7/265 ,  C11D7/28 ,  C11D7/50 ,  C11D11/0047 ,  H01L21/31116

摘要： A composition which includes liquid or supercritical carbon dioxide and an acid having a pKa of less than about 4. The composition is employed in a process of removing residue from a precision surface, such as a semiconductor sample, in which the precision surface is contacted with the composition under thermodynamic conditions consistent with the retention of the liquid or supercritical carbon dioxide in the liquid or supercritical state.

摘要翻译： 包括液体或超临界二氧化碳和pKa小于约4的酸的组合物。该组合物用于从精密表面与精密表面接触的精密表面（例如半导体样品）中除去残余物的方法 在热力学条件下的组成与液体或超临界二氧化碳在液体或超临界状态下的保留一致。

公开(公告)号：US06890855B2

公开(公告)日：2005-05-10

申请号：US09893207

申请日：2001-06-27

申请人： John Michael Cotte ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  Keith R. Pope ,  John P. Simons ,  Charles J. Taft

发明人： John Michael Cotte ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  Keith R. Pope ,  John P. Simons ,  Charles J. Taft

IPC分类号： H01L21/02 ,  H01L21/302

CPC分类号： H01L21/02101 ,  H01L21/02057

摘要： A process of removing residue from an etched precision surface. In this process the etched precision surface is contacted with a composition which includes liquid or supercritical carbon dioxide and a fluoride-generating species.

摘要翻译： 从蚀刻精密表面除去残留物的方法。 在该过程中，蚀刻的精密表面与包括液体或超临界二氧化碳和产生氟化物质的组合物接触。

公开(公告)号：US07288155B2

公开(公告)日：2007-10-30

申请号：US11128022

申请日：2005-05-12

申请人： John P. Simons ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  John M. Cotte ,  Keith R. Pope ,  Charles J. Taft ,  Dario Goldfarb

发明人： John P. Simons ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  John M. Cotte ,  Keith R. Pope ,  Charles J. Taft ,  Dario Goldfarb

IPC分类号： B08B3/00 ,  B08B7/04

CPC分类号： H01L21/02101 ,  B08B7/0021 ,  H01L21/67109 ,  H01L21/67248 ,  Y10S134/902

摘要： A method for cleaning a semiconductor structure including providing a chamber for holding the semiconductor structure and a dense phase fluid, providing a thermal transfer device having a thermal transfer surface, connecting the thermal transfer device to the chamber, placing the semiconductor structure in the chamber in contact with the thermal transfer surface and thermally cycling the thermal transfer surface.

摘要翻译： 一种用于清洁半导体结构的方法，包括提供用于保持半导体结构的腔室和致密相流体，提供具有热转印表面的热转印装置，将热转印装置连接到腔室，将半导体结构放置在腔室中 与热转印表面接触并热循环热转印表面。