公开(公告)号：US20090189718A1

公开(公告)日：2009-07-30

申请号：US12142361

申请日：2008-06-19

申请人： Ping-Yuan DENG ,  Jean-Fu KIANG

发明人： Ping-Yuan DENG ,  Jean-Fu KIANG

IPC分类号： H03K17/687 ,  H01P1/15

CPC分类号： H01P1/15 ,  H03K17/693

摘要： A transistor single-pole-single-throw circuit device includes at least a transistor single-pole-single-throw circuit having a first transistor and a second transistor, and an inductor capacitor (LC) resonator having an inductor and a capacitor connected in series, allowing two ends of the LC resonator connected to the first source and the first drain of the first transistor, respectively. The transistor single-pole-single-throw circuit device adopts an LC resonator having an inductor and a capacitor connected in series to connect with the first source and the first drain of the first transistor. The inductor couples and resonates with a parasitic capacitance of the transistor, to reduce signal loss due to emerged parasitic capacitance when the conventional single-pole-single-throw circuit selects a switch transistor with a larger width.

摘要翻译： 晶体管单极单掷电路器件至少包括具有第一晶体管和第二晶体管的晶体管单极单掷电路，以及具有串联连接的电感器和电容器的电感器电容器（LC）谐振器 允许LC谐振器的两端分别连接到第一晶体管的第一源极和第一漏极。 晶体管单极单掷电路器件采用具有串联连接的电感器和电容器的LC谐振器，与第一晶体管的第一源极和第一漏极连接。 电感器与晶体管的寄生电容耦合并谐振，以便在常规单极单掷电路选择具有较大宽度的开关晶体管时，减少由于出现的寄生电容引起的信号损耗。

公开(公告)号：US20090184774A1

公开(公告)日：2009-07-23

申请号：US12165296

申请日：2008-06-30

申请人： Ping-Yuan Deng ,  Jean-Fu Kiang

发明人： Ping-Yuan Deng ,  Jean-Fu Kiang

IPC分类号： H03B5/24

CPC分类号： H03B5/1228 ,  H03B5/1212 ,  H03B5/1253 ,  H03B5/1296

摘要： A transistor voltage-controlled oscillator includes a cross-coupled LC-tank transistor voltage-controlled oscillating circuit composed of two transistors, a capacitor set, and a first transformer inductor having a first inductor coil and a second inductor coil coupled to the first inductor coil; and a second transformer inductor having a third inductor coil and a fourth inductor coil coupled to the third inductor coil. The first transformer inductor and the second transformer inductor are both used as a coupling inductor for the cross-coupled LC-tank transistor voltage-controlled oscillating circuit. As a result, the inductor area of the transistor voltage-controlled oscillator is greatly reduced and the parasitic capacitance between the inductors and the silicon substrate is reduced accordingly such that the power consumption is greatly reduced and the quality factor of the inductor is increased.

摘要翻译： 晶体管压控振荡器包括由两个晶体管组成的交叉耦合的LC槽晶体管的压控振荡电路，一个电容器组和一个第一变压器电感器，其具有耦合到第一电感线圈的第一电感线圈和第二电感线圈 ; 以及具有耦合到第三电感线圈的第三电感线圈和第四电感线圈的第二变压器电感器。 第一变压器电感器和第二变压器电感器都用作交叉耦合LC槽晶体管压控振荡电路的耦合电感器。 结果，晶体管压控振荡器的电感器面积大大降低，并且电感器和硅衬底之间的寄生电容相应地减小，使得功耗大大降低并且电感器的品质因数增加。

公开(公告)号：US20090128244A1

公开(公告)日：2009-05-21

申请号：US12048558

申请日：2008-03-14

申请人： Ping-Yuan Deng ,  Jean-Fu Kiang

发明人： Ping-Yuan Deng ,  Jean-Fu Kiang

IPC分类号： H03B5/00 ,  H03B5/08

CPC分类号： H03B5/1215 ,  H03B5/1228 ,  H03B5/1243 ,  H03B2201/0208

摘要： A FET transistor voltage-controlled oscillator is provided that includes a crossed-coupled inductor capacitor tank (LC-Tank) transistor voltage-controlled circuit having a first transistor and a second transistor, as well as a transistor frequency multiplying circuit having a third transistor and a fourth transistor. In the design, the gate of the first transistor is connected to the drain of the second transistor, and the gate of the second transistor is connected to the drain of the first transistor. Then, the source of the third transistor is connected to the source of the first transistor, and the source of the fourth transistor is connected to the source of the second transistor. Last, the gate of the third transistor is connected to the gate of the fourth transistor, and the drain of the third transistor is connected to the drain of the fourth transistor. Therefore, the parasitic capacitance present in the first transistor and the parasitic capacitance present in the second transistor generate an effect similar to two capacitors connected in series, via the transistor frequency multiplying circuit. The effect reduces the total capacitance of the voltage-controlled oscillator, to increase the working frequency of the voltage-controlled circuit and allow a circuit having the voltage-controlled circuit to operate at a high frequency.

摘要翻译： 提供了一种FET晶体管压控振荡器，其包括具有第一晶体管和第二晶体管的交叉耦合电感器电容器箱（LC-Tank）晶体管压控电路，以及具有第三晶体管的晶体管倍频电路， 第四晶体管。 在设计中，第一晶体管的栅极连接到第二晶体管的漏极，第二晶体管的栅极连接到第一晶体管的漏极。 然后，第三晶体管的源极连接到第一晶体管的源极，第四晶体管的源极连接到第二晶体管的源极。 最后，第三晶体管的栅极连接到第四晶体管的栅极，第三晶体管的漏极连接到第四晶体管的漏极。 因此，存在于第一晶体管中的寄生电容和第二晶体管中存在的寄生电容经由晶体管倍频电路产生类似于串联连接的两个电容器的效果。 该效果降低了压控振荡器的总电容，以增加压控电路的工作频率，并允许具有压控电路的电路以高频工作。

公开(公告)号：US07741923B2

公开(公告)日：2010-06-22

申请号：US12048574

申请日：2008-03-14

申请人： Ping-Yuan Deng ,  Jean-Fu Kiang

发明人： Ping-Yuan Deng ,  Jean-Fu Kiang

IPC分类号： H03B5/08

CPC分类号： H03L7/1976 ,  H03B5/1212 ,  H03B5/1228 ,  H03B5/1265 ,  H03B2200/0038 ,  H03B2200/0074 ,  H03B2201/0266 ,  H03J2200/10 ,  H03K3/0315 ,  H03L7/099 ,  H03L7/0995 ,  H03L7/10 ,  H03L7/193 ,  H03L7/24 ,  H03L2207/06

摘要： A transistor voltage-controlled oscillator (VCO) and a frequency synthesizer having the transistor VCO are provided. The frequency synthesizer adopts a divide-by-five injection-locked frequency divider, which includes a five-stage inverter ring oscillating frequency dividing circuit for reducing the operating frequency of the oscillating signal from the VCO, thus decreasing power consumption due to counting operation of the frequency synthesizer. The transistor VCO includes three transistor switching capacitor sets connected in parallel to one another to form a parallel structure. The gates of the transistor switching capacitor sets are connected to respective operating voltage sources, so as to switch the status of the corresponding transistor switching capacitor set, which in turn adjusts the harmonic frequency generated by the VCO, thereby allowing the VCO to generate a corresponding operating frequency with enough bandwidth.

摘要翻译： 提供了具有晶体管VCO的晶体管压控振荡器（VCO）和频率合成器。 频率合成器采用五分频锁相分频器，包括一个五级反相环振荡分频电路，用于降低VCO振荡信号的工作频率，从而降低由于计数操作引起的功耗 频率合成器。 晶体管VCO包括彼此并联连接以形成并联结构的三个晶体管开关电容器组。 晶体管开关电容器组的栅极连接到相应的工作电压源，以便切换相应的晶体管开关电容器组的状态，这反过来调节由VCO产生的谐波频率，从而允许VCO产生相应的 工作频率有足够的带宽。

公开(公告)号：US20090189696A1

公开(公告)日：2009-07-30

申请号：US12137641

申请日：2008-06-12

申请人： Ping-Yuan Deng ,  Jean-Fu Kiang

发明人： Ping-Yuan Deng ,  Jean-Fu Kiang

IPC分类号： H03F3/68 ,  H03F3/191

CPC分类号： H03F3/193 ,  H03F1/0205 ,  H03F1/565 ,  H03F2200/108 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/294 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/451 ,  H03F2200/492

摘要： A low-noise amplifier is provided according to the present invention. The low-noise amplifier includes a first amplifier stage, a second amplifier stage, a third amplifier stage, an input matching network, inter-stage matching networks, and an output matching network. The impedance of the input matching network and the input impedance of the first amplifier stage are conjugate matched, thereby decreasing system power consumption and noise factor. The system gain is enhanced by cascading three stages of amplifiers.

摘要翻译： 根据本发明提供一种低噪声放大器。 低噪声放大器包括第一放大级，第二放大级，第三放大级，输入匹配网，级间匹配网络和输出匹配网络。 输入匹配网络的阻抗和第一放大器级的输入阻抗共轭匹配，从而降低系统功耗和噪声系数。 通过级联三级放大器来增强系统增益。

公开(公告)号：US20090140817A1

公开(公告)日：2009-06-04

申请号：US12048574

申请日：2008-03-14

申请人： Ping-Yuan Deng ,  Jean-Fu Kiang

发明人： Ping-Yuan Deng ,  Jean-Fu Kiang

IPC分类号： H03L7/087 ,  H03B5/12

CPC分类号： H03L7/1976 ,  H03B5/1212 ,  H03B5/1228 ,  H03B5/1265 ,  H03B2200/0038 ,  H03B2200/0074 ,  H03B2201/0266 ,  H03J2200/10 ,  H03K3/0315 ,  H03L7/099 ,  H03L7/0995 ,  H03L7/10 ,  H03L7/193 ,  H03L7/24 ,  H03L2207/06

摘要： A transistor voltage-controlled oscillator (VCO) and a frequency synthesizer having the transistor VCO are provided. The frequency synthesizer adopts a divide-by-five injection-locked frequency divider, which includes a five-stage inverter ring oscillating frequency dividing circuit for reducing the operating frequency of the oscillating signal from the VCO, thus decreasing power consumption due to counting operation of the frequency synthesizer. The transistor VCO includes three transistor switching capacitor sets connected in parallel to one another to form a parallel structure. The gates of the transistor switching capacitor sets are connected to respective operating voltage sources, so as to switch the status of the corresponding transistor switching capacitor set, which in turn adjusts the harmonic frequency generated by the VCO, thereby allowing the VCO to generate a corresponding operating frequency with enough bandwidth.

摘要翻译： 提供了具有晶体管VCO的晶体管压控振荡器（VCO）和频率合成器。 频率合成器采用五分频锁相分频器，包括一个五级反相环振荡分频电路，用于降低VCO振荡信号的工作频率，从而降低由于计数操作引起的功耗 频率合成器。 晶体管VCO包括彼此并联连接以形成并联结构的三个晶体管开关电容器组。 晶体管开关电容器组的栅极连接到相应的工作电压源，以便切换相应的晶体管开关电容器组的状态，这反过来调节由VCO产生的谐波频率，从而允许VCO产生相应的 工作频率有足够的带宽。

公开(公告)号：US07675382B2

公开(公告)日：2010-03-09

申请号：US12142361

申请日：2008-06-19

申请人： Ping-Yuan Deng ,  Jean-Fu Kiang

发明人： Ping-Yuan Deng ,  Jean-Fu Kiang

IPC分类号： H01P1/15 ,  H04B1/44

CPC分类号： H01P1/15 ,  H03K17/693

摘要： A transistor single-pole-single-throw circuit device includes at least a transistor single-pole-single-throw circuit having a first transistor and a second transistor, and an inductor capacitor (LC) resonator having an inductor and a capacitor connected in series, allowing two ends of the LC resonator connected to the first source and the first drain of the first transistor, respectively. The transistor single-pole-single-throw circuit device adopts an LC resonator having an inductor and a capacitor connected in series to connect with the first source and the first drain of the first transistor. The inductor couples and resonates with a parasitic capacitance of the transistor, to reduce signal loss due to emerged parasitic capacitance when the conventional single-pole-single-throw circuit selects a switch transistor with a larger width.

摘要翻译： 晶体管单极单掷电路器件至少包括具有第一晶体管和第二晶体管的晶体管单极单掷电路，以及具有串联连接的电感器和电容器的电感器电容器（LC）谐振器 允许LC谐振器的两端分别连接到第一晶体管的第一源极和第一漏极。 晶体管单极单掷电路器件采用具有串联连接的电感器和电容器的LC谐振器，与第一晶体管的第一源极和第一漏极连接。 电感器与晶体管的寄生电容耦合并谐振，以便在常规单极单掷电路选择具有较大宽度的开关晶体管时，减少由于出现的寄生电容引起的信号损耗。

公开(公告)号：US07612616B2

公开(公告)日：2009-11-03

申请号：US12137641

申请日：2008-06-12

申请人： Ping-Yuan Deng ,  Jean-Fu Kiang

发明人： Ping-Yuan Deng ,  Jean-Fu Kiang

IPC分类号： H03F3/04

CPC分类号： H03F3/193 ,  H03F1/0205 ,  H03F1/565 ,  H03F2200/108 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/294 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/451 ,  H03F2200/492

摘要： A low-noise amplifier is provided according to the present invention. The low-noise amplifier includes a first amplifier stage, a second amplifier stage, a third amplifier stage, an input matching network, inter-stage matching networks, and an output matching network. The impedance of the input matching network and the input impedance of the first amplifier stage are conjugate matched, thereby decreasing system power consumption and noise factor. The system gain is enhanced by cascading three stages of amplifiers.

摘要翻译： 根据本发明提供一种低噪声放大器。 低噪声放大器包括第一放大级，第二放大级，第三放大级，输入匹配网，级间匹配网络和输出匹配网络。 输入匹配网络的阻抗和第一放大器级的输入阻抗共轭匹配，从而降低系统功耗和噪声系数。 通过级联三级放大器来增强系统增益。

公开(公告)号：US07671689B2

公开(公告)日：2010-03-02

申请号：US12048558

申请日：2008-03-14

申请人： Ping-Yuan Deng ,  Jean-Fu Kiang

发明人： Ping-Yuan Deng ,  Jean-Fu Kiang

IPC分类号： H03B5/08

CPC分类号： H03B5/1215 ,  H03B5/1228 ,  H03B5/1243 ,  H03B2201/0208

摘要： A FET transistor voltage-controlled oscillator is provided that includes a crossed-coupled inductor capacitor tank (LC-Tank) transistor voltage-controlled circuit having a first transistor and a second transistor, as well as a transistor frequency multiplying circuit having a third transistor and a fourth transistor. In the design, the gate of the first transistor is connected to the drain of the second transistor, and the gate of the second transistor is connected to the drain of the first transistor. Then, the source of the third transistor is connected to the source of the first transistor, and the source of the fourth transistor is connected to the source of the second transistor. Last, the gate of the third transistor is connected to the gate of the fourth transistor, and the drain of the third transistor is connected to the drain of the fourth transistor. Therefore, the parasitic capacitance present in the first transistor and the parasitic capacitance present in the second transistor generate an effect similar to two capacitors connected in series, via the transistor frequency multiplying circuit. The effect reduces the total capacitance of the voltage-controlled oscillator, to increase the working frequency of the voltage-controlled circuit and allow a circuit having the voltage-controlled circuit to operate at a high frequency.

摘要翻译： 提供了一种FET晶体管压控振荡器，其包括具有第一晶体管和第二晶体管的交叉耦合电感器电容器箱（LC-Tank）晶体管压控电路，以及具有第三晶体管的晶体管倍频电路， 第四晶体管。 在设计中，第一晶体管的栅极连接到第二晶体管的漏极，第二晶体管的栅极连接到第一晶体管的漏极。 然后，第三晶体管的源极连接到第一晶体管的源极，第四晶体管的源极连接到第二晶体管的源极。 最后，第三晶体管的栅极连接到第四晶体管的栅极，第三晶体管的漏极连接到第四晶体管的漏极。 因此，存在于第一晶体管中的寄生电容和第二晶体管中存在的寄生电容经由晶体管倍频电路产生类似于串联连接的两个电容器的效果。 该效果降低了压控振荡器的总电容，以增加压控电路的工作频率，并允许具有压控电路的电路以高频率工作。