公开(公告)号：US5442204A

公开(公告)日：1995-08-15

申请号：US241840

申请日：1994-05-12

申请人： Piotr M. Mensz

发明人： Piotr M. Mensz

IPC分类号： H01L29/221 ,  H01L29/267 ,  H01L33/00 ,  H01L33/28 ,  H01S5/00 ,  H01S5/042 ,  H01S5/327 ,  H01S5/347 ,  H01L29/161

CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L29/221 ,  H01L29/267 ,  H01L33/0087 ,  H01S5/0421 ,  H01S5/327 ,  H01S5/347

摘要： A semiconductor structure useful in blue light emitting diodes and diode lasers is disclosed. The structure is formed of a substrate of p- type GaAs, a layer of a p- type II-VI compound of the formula Zn.sub.x Q.sub.1-x S.sub.y Se.sub.1-x where Q=Mg, Cd or Mn, 0.5.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1, separated from the substrate by a series of thin epitaxial undoped or p-doped layers including a layer of In.sub.0.5 Al.sub.0.5 P in contact with the layer of the II-VI compound, a layer of In.sub.0.5 Ga.sub.0.5 P or of Al.sub.x Ga.sub.1-x As where x=0.1-0.3 contacting the substrate, a layer of In.sub.0.5 Ga.sub.0.5 P contacting the layer of Al.sub.x Ga.sub.1-x P and at least one layer of In.sub.0.5 Al.sub.2 Ga.sub.0.5-z P where 0

摘要翻译： 公开了一种在蓝色发光二极管和二极管激光器中有用的半导体结构。 该结构由p型GaAs衬底，其中Q = Mg，Cd或Mn，0.5≤x≤1的式ZnxQ1-xSySe1-x的p型II-VI化合物层形成 和通过一系列薄的外延未掺杂或p掺杂层与衬底分离，包括与II-VI化合物层接触的In0.5Al0.5P层，层 的In0.5Ga0.5P或AlxGa1-xAs，其中x = 0.1-0.3与衬底接触，接触Al x Ga 1-x P层和至少一层In 0.5 Al 2 Ga 0.5-z P层的In0.5Ga0.5P层，其中 0

公开(公告)号：US5915164A

公开(公告)日：1999-06-22

申请号：US583148

申请日：1995-12-28

申请人： Nikhil R. Taskar ,  Piotr M. Mensz ,  Babar A. Khan

发明人： Nikhil R. Taskar ,  Piotr M. Mensz ,  Babar A. Khan

IPC分类号： H01L29/20 ,  H01L21/285 ,  H01L21/335 ,  H01L29/10 ,  H01L29/51 ,  H01L29/78 ,  H01L29/786 ,  H01L29/80 ,  H01L21/00

CPC分类号： H01L29/518 ,  H01L21/28587 ,  H01L21/28593 ,  H01L29/1079 ,  H01L29/66462 ,  H01L29/78681 ,  H01L29/802 ,  H01L29/2003

摘要： The present invention is directed to a technique for manufacturing semiconductor devices in which p type GaN is formed on a substrate and semi-insulating AlN is formed on the P type GaN with n type GaN formed on the p type GaN and partially below the AlN. Highly efficient high power and high voltage semiconductor devices are formed through this technique having better or similar properties to silicon type semiconductors.

摘要翻译： 本发明涉及一种用于制造半导体器件的技术，其中p型GaN形成在衬底上并且半导体AlN形成在p型GaN上，其中n型GaN形成在p型GaN上并部分地位于AlN之下。 通过该技术形成了高效率的高功率和高电压半导体器件，其具有与硅型半导体更好或相似的特性。

公开(公告)号：US5363395A

公开(公告)日：1994-11-08

申请号：US159755

申请日：1993-11-30

申请人： James M. Gaines ,  Ronald R. Drenten ,  Kevin W. Haberern ,  Thomas M. Marshall ,  Piotr M. Mensz ,  John Petruzzello

发明人： James M. Gaines ,  Ronald R. Drenten ,  Kevin W. Haberern ,  Thomas M. Marshall ,  Piotr M. Mensz ,  John Petruzzello

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/327 ,  H01S5/34 ,  H01S5/347 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/327 ,  H01S5/347 ,  H01S5/2063 ,  H01S5/3403

摘要： A blue-green II/VI semiconductor injection laser utilizing a Zn.sub.1-u Cd.sub.u Se active layer (quantum well) having Zn.sub.1-x Mg.sub.x S.sub.y Se.sub.1-y cladding layers and ZnS.sub.z Se.sub.1-z guiding layers on a GaAs substrate. These devices are operable in a pulse mode at room temperature.

摘要翻译： 利用在GaAs衬底上具有Zn1-xMgxSySe1-y包覆层和ZnSzSe1-z引导层的Zn1-uCduSe有源层（量子阱）的蓝 - 绿II / VI半导体注入激光器。 这些装置可在室温下以脉冲模式工作。

公开(公告)号：US5990531A

公开(公告)日：1999-11-23

申请号：US968680

申请日：1997-11-12

申请人： Nikhil R. Taskar ,  Piotr M. Mensz ,  Babar A. Khan

发明人： Nikhil R. Taskar ,  Piotr M. Mensz ,  Babar A. Khan

IPC分类号： H01L29/20 ,  H01L21/285 ,  H01L21/335 ,  H01L29/10 ,  H01L29/51 ,  H01L29/78 ,  H01L29/786 ,  H01L29/80 ,  H01L29/76

CPC分类号： H01L29/518 ,  H01L21/28587 ,  H01L21/28593 ,  H01L29/1079 ,  H01L29/66462 ,  H01L29/78681 ,  H01L29/802 ,  H01L29/2003

摘要： The present invention is directed to a technique for manufacturing semiconductor devices in which p type GaN is formed on a substrate and semi-insulating AlN is formed on the P type GaN with n type GaN formed on the p type GaN and partially below the AlN. Highly efficient high power and high voltage semiconductor devices are formed through this technique having better or similar properties to silicon type semiconductors.

摘要翻译： 本发明涉及一种用于制造半导体器件的技术，其中p型GaN形成在衬底上并且半导体AlN形成在p型GaN上，其中n型GaN形成在p型GaN上并部分地位于AlN之下。 通过该技术形成了高效率的高功率和高电压半导体器件，其具有与硅型半导体更好或相似的特性。

公开(公告)号：US5544190A

公开(公告)日：1996-08-06

申请号：US343700

申请日：1994-11-17

申请人： Piotr M. Mensz

发明人： Piotr M. Mensz

IPC分类号： H01S5/22 ,  H01S5/223 ,  H01S5/327 ,  H01S3/19

CPC分类号： H01S5/327 ,  H01S5/2211 ,  H01S5/2231

摘要： A II-VI semiconductor diode laser has a II-VI semiconductor structure disposed atop a semiconductor substrate and covered with a contact layer. A current-blocking layer is disposed on top of this contact layer. The current-blocking layer has an etched groove extending therethrough, to expose a stripe of the contact layer. A metal electrode layer contacts the current-blocking layer and extends into the etched groove to contact the exposed stripe of the contact layer. The current-blocking layer confines the current flow between the metal electrode layer and the contact layer to the stripe of the contact layer exposed by the etched groove.

摘要翻译： II-VI半导体二极管激光器具有设置在半导体衬底上并被接触层覆盖的II-VI半导体结构。 电流阻挡层设置在该接触层的顶部。 电流阻挡层具有穿过其延伸的蚀刻凹槽，以露出接触层的条纹。 金属电极层接触电流阻挡层并延伸到蚀刻槽中以接触暴露的接触层的条纹。 电流阻挡层将金属电极层和接触层之间的电流限制到由蚀刻槽暴露的接触层的条纹。

公开(公告)号：US5422902A

公开(公告)日：1995-06-06

申请号：US87307

申请日：1993-07-02

申请人： Piotr M. Mensz

发明人： Piotr M. Mensz

IPC分类号： H01L33/00 ,  H01L29/225 ,  H01L29/45 ,  H01S5/00 ,  H01S5/042 ,  H01S5/327 ,  H01S5/347 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01L29/225 ,  H01L29/45 ,  H01S5/0421 ,  H01S5/327 ,  H01S5/347

摘要： The present invention relates to semiconductor devices with ohmic contact to ZnSe-based layers and lasers derived therefrom wherein BeTe is used in a graded band gap layer. Preferably, an ohmic contact layer of BeTe-containing graded composition is used which consists essentially of Be.sub.x Zn.sub.1-x Te.sub.x Se.sub.1-x wherein x is within the range of 0 and 1 selected so as to provide substantial lattice matching to the lattice structure c the substrate. Specifically, Be.sub.x Zn.sub.1-x Te.sub.x Se.sub.1-x graded gap semiconductor layers are provided for application as ohmic contacts to p-type ZnSe, ZnS.sub.x Se.sub.1-x, Zn.sub.1-x Cd.sub.x S, Zn.sub.1-x Cd.sub.x S.sub.y Se.sub.1-y, Zn.sub.1-x Mg.sub.x S.sub.y Se.sub.1-y (wherein x and y are a number selected from 0 to 1) and other II-VI compound semiconductors used in lasers grown on GaAs substrates. Due to the close lattice match to GaAs substrate, graded (BeTe).sub.x (ZnSe).sub.1-x contact allow for the entire device structure to be grown within the pseudomorphic limit.

摘要翻译： 本发明涉及与ZnSe基层和从其衍生的激光器欧姆接触的半导体器件，其中BeTe用于渐变带隙层。 优选地，使用包含BeTe的渐变组合物的欧姆接触层，其基本上由BexZn1-xTexSe1-x组成，其中x在0和1的范围内被选择，以便为衬底的晶格结构c提供实质的晶格匹配。 具体地说，提供BexZn1-xTexSe1-x渐变间隙半导体层作为与p型ZnSe，ZnSxSe1-x，Zn1-xCdxS，Zn1-xCdxSySe1-y，Zn1-xMgxSySe1-y（其中x和y为 选自0至1的数字）和用于在GaAs衬底上生长的激光器中的其它II-VI化合物半导体。 由于与GaAs衬底紧密的晶格匹配，渐变（BeTe）x（ZnSe）1-x接触允许整个器件结构在伪晶界内生长。