公开(公告)号：US20130122705A1

公开(公告)日：2013-05-16

申请号：US13733580

申请日：2013-01-03

申请人： Suryadevara V. BABU ,  Pradeepa DANDU ,  Vamsi K. DEVARAPALLI ,  Guillaume CRINIERE ,  Claire PITOIS

发明人： Suryadevara V. BABU ,  Pradeepa DANDU ,  Vamsi K. DEVARAPALLI ,  Guillaume CRINIERE ,  Claire PITOIS

IPC分类号： H01L21/306

CPC分类号： H01L21/30625 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： A colloidal dispersion for chemical mechanical polishing comprising: (a) an abrasive component; and (b) from about 0.05% to about 10% by weight of the abrasive component, a water-soluble amphoteric polymer comprising at least one macromolecular chain B and a part A bonded to a single end of the at least one macromolecular chain B, wherein the macromolecular chain B is derived from one or more ethylenically unsaturated monomers having quaternary ammonium groups or inium groups, and wherein the part A is a polymeric or nonpolymeric group comprising at least one anionic group; wherein the dispersion has a pH of between about 1.5 and about 6. The colloidal dispersion is capable of polishing a substrate comprising silicon nitride and silicon oxide with a reverse selectivity ratio of at least about 27, typically at least 50 the reverse selectivity ratio being the ratio of the rate of removal of the silicon nitride to the rate of removal of the silicon oxide.

摘要翻译： 一种用于化学机械抛光的胶体分散体，包括：（a）磨料组分; 和（b）约0.05重量％至约10重量％的所述磨料组分，水溶性两性聚合物，其包含至少一个大分子链B和与所述至少一个大分子链B的单个末端键合的部分A， 其中所述大分子链B衍生自具有季铵基或鎓基的一种或多种烯属不饱和单体，并且其中所述A部分为包含至少一个阴离子基团的聚合物或非聚合物基团; 其中分散体的pH为约1.5至约6.胶体分散体能够以至少约27的反向选择比（通常为至少50）来抛光包含氮化硅和氧化硅的基底，反向选择比为 氮化硅去除速率与氧化硅去除速率之比。

公开(公告)号：US08366959B2

公开(公告)日：2013-02-05

申请号：US12586651

申请日：2009-09-25

申请人： Suryadevara V. Babu ,  Pradeepa Dandu ,  Vamsi K Devarapalli ,  Guillaume Crinière ,  Claire Pitois

发明人： Suryadevara V. Babu ,  Pradeepa Dandu ,  Vamsi K Devarapalli ,  Guillaume Crinière ,  Claire Pitois

IPC分类号： C09K13/06

CPC分类号： H01L21/30625 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： A colloidal dispersion for chemical mechanical polishing comprising: (a) an abrasive component; and (b) from about 0.05% to about 10% by weight of the abrasive component, a water-soluble amphoteric polymer comprising at least one macromolecular chain B and a part A bonded to a single end of the at least one macromolecular chain B, wherein the macromolecular chain B is derived from one or more ethylenically unsaturated monomers having quaternary ammonium groups or inium groups, and wherein the part A is a polymeric or nonpolymeric group comprising at least one anionic group; wherein the dispersion has a pH of between about 1.5 and about 6. The colloidal dispersion is capable of polishing a substrate comprising silicon nitride and silicon oxide with a reverse selectivity ratio of at least about 27, typically at least 50 the reverse selectivity ratio being the ratio of the rate of removal of the silicon nitride to the rate of removal of the silicon oxide.

摘要翻译： 一种用于化学机械抛光的胶体分散体，包括：（a）磨料组分; 和（b）约0.05重量％至约10重量％的所述磨料组分，水溶性两性聚合物，其包含至少一个大分子链B和与所述至少一个大分子链B的单个末端键合的部分A， 其中所述大分子链B衍生自具有季铵基或鎓基的一种或多种烯属不饱和单体，并且其中所述A部分为包含至少一个阴离子基团的聚合物或非聚合物基团; 其中分散体的pH为约1.5至约6.胶体分散体能够以至少约27的反向选择比（通常为至少50）来抛光包含氮化硅和氧化硅的衬底，反向选择比为 氮化硅去除速率与氧化硅去除速率之比。

公开(公告)号：US20100081281A1

公开(公告)日：2010-04-01

申请号：US12586651

申请日：2009-09-25

申请人： Suryadevara V. Babu ,  Pradeepa Dandu ,  Vamsi K. Devarapalli ,  Guillaume Criniere ,  Claire Pitois

发明人： Suryadevara V. Babu ,  Pradeepa Dandu ,  Vamsi K. Devarapalli ,  Guillaume Criniere ,  Claire Pitois

IPC分类号： H01L21/304 ,  C09K13/00

CPC分类号： H01L21/30625 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： A colloidal dispersion for chemical mechanical polishing comprising: (a) an abrasive component; and (b) from about 0.05% to about 10% by weight of the abrasive component, a water-soluble amphoteric polymer comprising at least one macromolecular chain B and a part A bonded to a single end of the at least one macromolecular chain B, wherein the macromolecular chain B is derived from one or more ethylenically unsaturated monomers having quaternary ammonium groups or inium groups, and wherein the part A is a polymeric or nonpolymeric group comprising at least one anionic group; wherein the dispersion has a pH of between about 1.5 and about 6. The colloidal dispersion is capable of polishing a substrate comprising silicon nitride and silicon oxide with a reverse selectivity ratio of at least about 27, typically at least 50 the reverse selectivity ratio being the ratio of the rate of removal of the silicon nitride to the rate of removal of the silicon oxide.

摘要翻译： 一种用于化学机械抛光的胶体分散体，包括：（a）磨料组分; 和（b）约0.05重量％至约10重量％的所述磨料组分，水溶性两性聚合物，其包含至少一个大分子链B和与所述至少一个大分子链B的单个末端键合的部分A， 其中所述大分子链B衍生自具有季铵基或鎓基的一种或多种烯属不饱和单体，并且其中所述A部分为包含至少一个阴离子基团的聚合物或非聚合物基团; 其中分散体的pH为约1.5至约6.胶体分散体能够以至少约27的反向选择比（通常为至少50）来抛光包含氮化硅和氧化硅的基底，反向选择比为 氮化硅去除速率与氧化硅去除速率之比。