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    Curling iron
    1.
    外观设计
    Curling iron 有权

    公开(公告)号：USD1067515S1

    公开(公告)日：2025-03-18

    申请号：US29967373

    申请日：2024-10-09

    Applicant: Qin Wang

    Designer： Qin Wang

    PUNCTURE GUIDER AND PUNCTURE GUIDING SYSTEM
    2.
    发明申请
    PUNCTURE GUIDER AND PUNCTURE GUIDING SYSTEM 有权

    公开(公告)号：US20210259726A1

    公开(公告)日：2021-08-26

    申请号：US17254181

    申请日：2018-06-21

    Applicant: Qin WANG

    Inventor： Qin WANG

    IPC: A61B17/34

    Abstract: Disclosed are a puncture guider (02, 2) and a puncture guiding system, wherein a puncture channel (80) automatically adapted to the diameter of a puncture needle (03) can be realized in the puncture guider (02, 2). The puncture guider (02, 2) is used for connecting to a puncture support, and the puncture guider (02, 2) comprises a depth block (21) and a push plate (22), wherein the depth block (21) comprises: a connection structure for being connected to the puncture support, and a first guiding wall (211) and a second guiding wall (212), which are connected to each other and form an included angle; and the push plate (22) comprises: a needle groove plate (222), and an adaptive component. A first end face (2221) of the needle groove plate (222), and the first guiding wall (211) and the second guiding wall (212) enclose a puncture channel (80), and under the action of the adaptive component, a displacement can occur between the first end face (2221) of the needle groove plate (222) and the first guiding wall (211) and second guiding wall (212), so that the puncture channel (80) can change automatically according to the specification of the puncture needle (03), thereby automatically adapting to puncture needles (03) with different needle diameter specifications. The puncture guiding system comprises a puncture support and a puncture guider (02, 2).

    PROBE SLEEVE, PIPE SOCKET, PIPE SOCKET ASSEMBLY, AND METHOD FOR WRAPPING THE PROBE SLEEVE AROUND THE PIPE SOCKET
    3.
    发明申请
    PROBE SLEEVE, PIPE SOCKET, PIPE SOCKET ASSEMBLY, AND METHOD FOR WRAPPING THE PROBE SLEEVE AROUND THE PIPE SOCKET 审中-公开

    公开(公告)号：US20190159757A1

    公开(公告)日：2019-05-30

    申请号：US16320715

    申请日：2016-07-29

    Applicant: Qin WANG

    Inventor： Qin WANG

    IPC: A61B8/00 ,  A61B8/12

    Abstract: A probe sleeve (1), a pipe socket (2), a pipe socket assembly, and a method for wrapping the probe sleeve (1) around the pipe socket (2), wherein the probe sleeve (1) comprises a large diameter section (11) and a small diameter section (12); the free end of the large diameter section (11) is an open end (111), and the free end of the small diameter section (12) is a closed end (121). The probe sleeve (1), which is an intracavitary probe sleeve/transesophageal probe sleeve, can be used with the pipe socket (2) and as a surrogate of a condom, and can achieve an aseptic operation in an operative process. The method for wrapping the probe sleeve (1) around the pipe socket (2), which wraps the probe sleeve (1) around the pipe socket (2), is used for an ultrasonic B-ultrasound operation, and can meet the requirements of an aseptic operation.

    Three-dimensional multi-bit non-volatile memory and method for manufacturing the same
    6.
    发明授权
    Three-dimensional multi-bit non-volatile memory and method for manufacturing the same 有权
    三维多位非易失性存储器及其制造方法

    公开(公告)号：US08705274B2

    公开(公告)日：2014-04-22

    申请号：US13376925

    申请日：2011-06-30

    Applicant: Ming Liu ,  Chenxi Zhu ,  Zongliang Huo ,  Feng Yan ,  Qin Wang ,  Shibing Long

    Inventor： Ming Liu ,  Chenxi Zhu ,  Zongliang Huo ,  Feng Yan ,  Qin Wang ,  Shibing Long

    IPC: G11C16/04 ,  H01L21/336

    CPC classification number: H01L27/11582

    Abstract: The present disclosure relates to the field of microelectronics manufacture and memories. A three-dimensional multi-bit non-volatile memory and a method for manufacturing the same are disclosed. The memory comprises a plurality of memory cells constituting a memory array. The memory array may comprise: a gate stack structure; periodically and alternately arranged gate stack regions and channel region spaces; gate dielectric layers for discrete charge storage; periodically arranged channel regions; source doping regions and drain doping regions symmetrically arranged to each other; bit lines led from the source doping regions and the drain doping regions; and word lines led from the gate stack regions. The gate dielectric layers for discrete charge storage can provide physical storage spots to achieve single-bit or multi-bit operations, so as to achieve a high storage density. According to the present disclosure, the localized charge storage characteristic of the charge trapping layer and characteristics such as a longer effective channel length and a higher density of a vertical memory structure are utilized, to provide multiple storage spots in a single memory cell. Therefore, the storage density is improved while good performances such as high speed are ensured.

    Abstract translation: 本公开涉及微电子制造领域和存储器。 公开了一种三维多位非易失性存储器及其制造方法。 存储器包括构成存储器阵列的多个存储单元。 存储器阵列可以包括：栅极堆叠结构; 定期和交替布置的栅极堆叠区域和沟道区域空间; 用于离散电荷存储的栅极电介质层; 定期布置的通道区域; 源极掺杂区域和漏极掺杂区域彼此对称布置; 源极掺杂区域和漏极掺杂区域引出的位线; 和从栅极堆栈区域引出的字线。 用于离散电荷存储的栅极电介质层可以提供物理存储点以实现单位或多位操作，从而实现高存储密度。 根据本公开，利用电荷俘获层的局部电荷存储特性以及垂直存储器结构的较长有效沟道长度和较高密度等特征，以在单个存储单元中提供多个存储点。 因此，存储密度得到改善，同时保证了诸如高速的良好性能。

    Termination for superjunction VDMOSFET
    7.
    发明授权
    Termination for superjunction VDMOSFET 有权
    端接VDMOSFET

    公开(公告)号：US08482064B2

    公开(公告)日：2013-07-09

    申请号：US13493505

    申请日：2012-06-11

    Applicant: Yangbo Yi ,  Haisong Li ,  Qin Wang ,  Ping Tao ,  Lixin Zhang

    Inventor： Yangbo Yi ,  Haisong Li ,  Qin Wang ,  Ping Tao ,  Lixin Zhang

    IPC: H01L29/78

    CPC classification number: H01L29/7811 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696

    Abstract: A termination for silicon superjunction VDMOSFET comprises heavily doped N-type silicon substrate which also works as drain region; drain metal is disposed on the back surface of the heavily doped N-type silicon substrate; an N-type silicon epitaxial layer is disposed on the heavily doped N-type silicon substrate; P-type silicon columns and N-type silicon columns are formed in the N-type silicon epitaxial layer, alternately arranged; a continuous silicon oxide layer is disposed on a part of silicon surface in the termination; structures that block the drift of mobile ions (several discontinuous silicon oxide layers arranged at intervals) are disposed on the other part of silicon surface in the termination. The structures that block the drift of mobile ions disposed in the termination region are able to effectively prevent movement of the mobile ions and improve the capability of the power device against the contamination induced by the mobile ions.

    Abstract translation: 硅超结VDMOSFET的终端包括也用作漏极区的重掺杂N型硅衬底; 漏极金属配置在重掺杂N型硅衬底的背表面上; 在重掺杂的N型硅衬底上设置N型硅外延层; 交替布置在N型硅外延层中形成P型硅柱和N型硅柱; 连续的氧化硅层设置在终端的硅表面的一部分上; 阻止移动离子漂移的结构（间隔布置的几个不连续的氧化硅层）设置在终端的硅表面的另一部分上。 阻止设置在终端区域中的移动离子的漂移的结构能够有效地防止移动离子的移动，并提高功率器件抵抗由移动离子引起的污染的能力。

    PARACENTESIS NEEDLE FRAME
    10.
    发明申请
    PARACENTESIS NEEDLE FRAME 审中-公开

    公开(公告)号：US20190069923A1

    公开(公告)日：2019-03-07

    申请号：US15773930

    申请日：2015-12-25

    Applicant: Qin WANG

    Inventor： Qin WANG

    IPC: A61B17/34

    Abstract: A needle guide holder, which is used for a fixing medical puncture needle and a ultrasonic probe, comprises a holder body (1a, 1b) and a fixing device (2a, 2b) used in cooperation with the holder body (1a, 1b). The fixing device (2a, 2b) is mounted onto the holder body (1a, 1b) and provided with a weakening portion (23a, 23b). The needle guide holder is designed to be disposable, thereby avoiding the possibility of cross-infection caused by using the same needle guide holder on different patients. The needle guide holder can be used on one and same patient to perform a number of treatments just through the replacement of a sliding frame and without replacing the fixing device and a fixing frame. In a treatment process, the puncture needle is left in the body for a subsequent treatment, while the needle guide holder and the ultrasonic probe can be removed from the human body.

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