High pressure apparatus and method for nitride crystal growth
    1.
    发明授权
    High pressure apparatus and method for nitride crystal growth 有权
    用于氮化物晶体生长的高压装置和方法

    公开(公告)号:US09157167B1

    公开(公告)日:2015-10-13

    申请号:US13556105

    申请日:2012-07-23

    Abstract: A high pressure apparatus and related methods for processing supercritical fluids are disclosed. In certain embodiments, the present apparatus includes a capsule, a heater, at least one ceramic ring or multiple rings, optionally, with one or more scribe marks and/or cracks present. In certain embodiments, the apparatus has a metal sleeve containing each ceramic ring. The apparatus also has a high strength enclosure, end flanges with associated insulation, and a power control system. In certain embodiments, a high pressure apparatus is constructed such that the diametric annular gap between the outer diameter of the heater and the ceramic ring is selected to provide radial load-bearing contact above a particular temperature and pressure. In certain embodiments, the apparatus is capable of accessing pressures of 0.2 GPa to 2 GPa and temperatures of 400° C. to 1200° C.

    Abstract translation: 公开了一种用于加工超临界流体的高压装置和相关方法。 在某些实施方案中,本装置包括胶囊,加热器,至少一个陶瓷环或多个环,任选地,存在一个或多个划痕和/或裂纹。 在某些实施例中,该装置具有包含每个陶瓷环的金属套筒。 该设备还具有高强度外壳,具有相关绝缘的端部法兰和功率控制系统。 在某些实施例中,高压设备被构造成使得加热器外径与陶瓷环之间的直径环形间隙被选择成在特定温度和压力之上提供径向承载接触。 在某些实施方案中,该装置能够获得0.2GPa至2GPa的压力和400℃至1200℃的温度。

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