公开(公告)号：US20170037688A1

公开(公告)日：2017-02-09

申请号：US15297882

申请日：2016-10-19

Applicant: Baker Hughes Incorporated

Inventor： Valery N. Khabashesku ,  Vladimir P. Filonenko

IPC: E21B10/567 ,  B24D3/06 ,  B24D18/00

CPC classification number: E21B10/567 ,  B01J3/062 ,  B01J2203/062 ,  B01J2203/063 ,  B01J2203/0635 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/0665 ,  B01J2203/067 ,  B01J2203/0685 ,  B24D3/06 ,  B24D18/0009

Abstract: A polycrystalline compact includes diamond, cubic boron nitride, and at least one hard material, which may be aluminum nitride, gallium nitride, silicon nitride, titanium nitride, silicon carbide, titanium carbide, titanium boride, titanium diboride, and/or aluminum boride. The diamond, the cubic boron nitride, and the hard material are intermixed and interbonded to form a polycrystalline material. An earth-boring tool includes a bit body and a polycrystalline diamond compact secured to the bit body. Methods of fabricating polycrystalline compacts include forming a mixture comprising diamond, non-cubic boron nitride, and a metal or semimetal; encapsulating the mixture in a container; and subjecting the encapsulated mixture to high-pressure and high-temperature conditions to form a polycrystalline material.

Abstract translation: 多晶结构体包括金刚石，立方氮化硼和至少一种硬质材料，其可以是氮化铝，氮化镓，氮化硅，氮化钛，碳化硅，碳化钛，硼化钛，二硼化钛和/或硼化铝。 将金刚石，立方氮化硼和硬质材料混合并键合以形成多晶材料。 钻孔工具包括固定在钻头体上的钻头体和多晶金刚石块。 制造多晶压块的方法包括形成包含金刚石，非立方氮化硼和金属或半金属的混合物; 将混合物包封在容器中; 并将包封的混合物经受高压和高温条件以形成多晶材料。

公开(公告)号：US08323405B2

公开(公告)日：2012-12-04

申请号：US12534849

申请日：2009-08-03

Applicant: Mark P. D'Evelyn

Inventor： Mark P. D'Evelyn

IPC: C30B17/00

CPC classification number: B01J3/008 ,  B01J3/062 ,  B01J2203/0665 ,  B01J2203/068 ,  C30B7/10 ,  C30B29/406 ,  Y10T117/1096

Abstract: An apparatus and associated method for large-scale manufacturing of gallium nitride is provided. The apparatus comprises a large diameter autoclave and a raw material basket. Methods include metered addition of dopants in the raw material and control of the atmosphere during crystal growth. The apparatus and methods are scalable up to very large volumes and are cost effective.

Abstract translation: 提供了用于大规模制造氮化镓的装置和相关方法。 该装置包括大直径高压釜和原料篮。 方法包括在原料中计量添加掺杂剂并在晶体生长期间控制大气。 该设备和方法可扩展到非常大的体积，并且具有成本效益。

公开(公告)号：US20060177362A1

公开(公告)日：2006-08-10

申请号：US11042858

申请日：2005-01-25

Applicant: Mark D'Evelyn ,  Robert Giddings ,  Fred Sharifi ,  Subhrajit Dey ,  Huicong Hong ,  Joseph Kapp ,  Ashok Khare

Inventor： Mark D'Evelyn ,  Robert Giddings ,  Fred Sharifi ,  Subhrajit Dey ,  Huicong Hong ,  Joseph Kapp ,  Ashok Khare

IPC: B01D9/00

CPC classification number: B01J3/008 ,  B01J3/002 ,  B01J3/03 ,  B01J3/046 ,  B01J3/06 ,  B01J2203/0665 ,  B01J2203/068 ,  B01J2219/00135 ,  B01J2219/00155 ,  B01J2219/00162 ,  Y02P20/544 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1092

Abstract: An apparatus and method for processing materials in supercritical fluids is disclosed. The apparatus includes a capsule configured to contain a supercritical fluid, a high strength enclosure disposed about the capsule and a sensor configured to sense pressure difference between an interior and an exterior of the capsule. The apparatus also includes a pressure control device configured to adjust pressure difference of the capsule in response to the pressure difference sensed by the sensor. The apparatus further includes at least one dividing structure disposed within the capsule that divides the capsule into a seed growing chamber and a nutrient chamber.

Abstract translation: 公开了一种在超临界流体中处理材料的装置和方法。 所述装置包括：胶囊，其被配置为容纳超临界流体，围绕所述胶囊设置的高强度外壳;以及被配置为感测所述胶囊的内部和外部之间的压力差的传感器。 该装置还包括压力控制装置，该压力控制装置被配置为响应于由传感器感测到的压差而调节胶囊的压力差。 该装置还包括设置在胶囊内的至少一个分割结构，其将胶囊分成种子生长室和营养室。

公开(公告)号：US06398867B1

公开(公告)日：2002-06-04

申请号：US09413446

申请日：1999-10-06

Applicant: Mark Philip D'Evelyn ,  Kristi Jean Narang

Inventor： Mark Philip D'Evelyn ,  Kristi Jean Narang

IPC: C30B1110

CPC classification number: B01J3/062 ,  B01J2203/0665 ,  B01J2203/068

Abstract: A gallium nitride growth process forms crystalline gallium nitride. The process comprises the steps of providing a source gallium nitride; providing mineralizer; providing solvent; providing a capsule; disposing the source gallium nitride, mineralizer and solvent in the capsule; sealing the capsule; disposing the capsule in a pressure cell; and subjecting the pressure cell to high pressure and high temperature (HPHT) conditions for a length of time sufficient to dissolve the source gallium nitride and precipitate the source gallium nitride into at least one gallium nitride crystal. The invention also provides for gallium nitride crystals formed by the processes of the invention.

Abstract translation: 氮化镓生长工艺形成结晶氮化镓。 该方法包括以下步骤：提供源氮化镓; 提供矿化剂; 提供溶剂; 提供胶囊; 将源氮化镓，矿化剂和溶剂置于胶囊中; 密封胶囊; 将胶囊置于压力池中; 以及使压力单元经受高压和高温（HPHT）条件一段足以溶解氮化镓源的时间并将源氮化镓沉淀到至少一个氮化镓晶体中。 本发明还提供了通过本发明的方法形成的氮化镓晶体。

公开(公告)号：US08097081B2

公开(公告)日：2012-01-17

申请号：US12133364

申请日：2008-06-05

Applicant: Mark P. D'Evelyn

Inventor： Mark P. D'Evelyn

IPC: C30B1/12

CPC classification number: C30B29/406 ,  B01J3/008 ,  B01J3/042 ,  B01J3/065 ,  B01J2203/0665 ,  B01J2203/067 ,  B01J2203/068 ,  B30B11/005 ,  C30B7/10 ,  C30B29/403 ,  Y02P20/544 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1096

Abstract: A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. IN a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.

Abstract translation: 一种用于加工超临界流体的高压装置及相关方法。 在具体实施例中，本装置包括胶囊，加热器，至少一个陶瓷环，但可以是多个环，任选地，存在一个或多个划痕和/或裂纹。 在具体实施例中，该装置可选地具有包含每个陶瓷环的金属套筒。 该设备还具有高强度外壳，具有相关绝缘的端部法兰和电源控制系统。 在具体实施例中，该装置能够分别访问0.2-2GPa和400-1200℃的压力和温度。

公开(公告)号：US08021481B2

公开(公告)日：2011-09-20

申请号：US12534857

申请日：2009-08-04

Applicant: Mark P. D'Evelyn

Inventor： Mark P. D'Evelyn

IPC: C30B17/00

CPC classification number: B01J3/008 ,  B01J3/062 ,  B01J2203/0665 ,  B01J2203/068 ,  C30B7/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1008

Abstract: A method for large-scale manufacturing of gallium nitride includes a process for reducing and/or minimizing contamination in the crystals, for solvent addition to an autoclave, for improving or optimizing the solvent atmosphere composition, for removal of the solvent from the autoclave, and for recycling of the solvent. The method is scalable up to large volumes and is cost effective.

Abstract translation: 用于大规模制造氮化镓的方法包括用于减少和/或最小化晶体中的污染物的方法，用于溶剂添加到高压釜中，用于改进或优化溶剂气氛组合物，用于从高压釜中除去溶剂;以及 用于回收溶剂。 该方法可扩展到大容量，并且具有成本效益。

公开(公告)号：US07175704B2

公开(公告)日：2007-02-13

申请号：US10455007

申请日：2003-06-05

Applicant: Mark Philip D'Evelyn ,  Thomas Richard Anthony ,  Stephen Daley Arthur ,  Lionel Monty Levinson ,  John William Lucek ,  Larry Burton Rowland ,  Suresh Shankarappa Vagarali

Inventor： Mark Philip D'Evelyn ,  Thomas Richard Anthony ,  Stephen Daley Arthur ,  Lionel Monty Levinson ,  John William Lucek ,  Larry Burton Rowland ,  Suresh Shankarappa Vagarali

IPC: C30B7/10

CPC classification number: B01J3/065 ,  B01J3/062 ,  B01J2203/0635 ,  B01J2203/0645 ,  B01J2203/066 ,  B01J2203/0665 ,  B01J2203/067 ,  B01J2203/0675 ,  B01J2203/069 ,  C30B33/00 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.

Abstract translation: 通过提供含有缺陷的晶体和压力介质，开始在高压高温（HP / HT）下除去非金刚石晶体中的缺陷或解除应变的方法。 将晶体和压力介质设置在高压电池中并放置在高压设备中，用于在足够高的压力和高温的反应条件下进行处理足够的时间以适应一个或多个去除缺陷或减轻单一应变的应变 水晶。

公开(公告)号：US20060096521A1

公开(公告)日：2006-05-11

申请号：US11300660

申请日：2005-12-12

Applicant: Mark D'Evelyn ,  Thomas Anthony ,  Stephen Arthur ,  Lionel Levinson ,  John Lucek ,  Larry Rowland ,  Suresh Vagarali

Inventor： Mark D'Evelyn ,  Thomas Anthony ,  Stephen Arthur ,  Lionel Levinson ,  John Lucek ,  Larry Rowland ,  Suresh Vagarali

IPC: H01L21/322

CPC classification number: B01J3/065 ,  B01J3/062 ,  B01J2203/0635 ,  B01J2203/0645 ,  B01J2203/066 ,  B01J2203/0665 ,  B01J2203/067 ,  B01J2203/0675 ,  B01J2203/069 ,  C30B33/00 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.

Abstract translation: 通过提供含有缺陷的晶体和压力介质，开始在高压高温（HP / HT）下除去非金刚石晶体中的缺陷或解除应变的方法。 将晶体和压力介质设置在高压电池中并放置在高压设备中，用于在足够高的压力和高温的反应条件下进行处理足够的时间以适应一个或多个去除缺陷或减轻单一应变的应变 水晶。

公开(公告)号：US20050098089A1

公开(公告)日：2005-05-12

申请号：US10892131

申请日：2004-07-16

Applicant: Wataru Utsumi ,  Hiroyuki Saitoh ,  Katsutoshi Aoki

Inventor： Wataru Utsumi ,  Hiroyuki Saitoh ,  Katsutoshi Aoki

IPC: B01J3/06 ,  C01B21/06 ,  C30B1/00 ,  C30B11/02 ,  C30B29/38 ,  C30B29/40 ,  H01L29/22 ,  H01L33/00

CPC classification number: C30B29/40 ,  B01J3/062 ,  B01J2203/0665 ,  B01J2203/0685

Abstract: A process for producing single-crystal gallium nitride comprising the steps of performing congruent melting of gallium nitride at a high pressure between 6×104 atm. and 10×104 atm. and at a high temperature between 2,200° C. and 2,500° C. and then slowly cooling the obtained gallium nitride melt at the stated high pressure.

Abstract translation: 一种制造单晶氮化镓的方法，包括以6×10 4大气压之间的高压进行氮化镓的一致熔融的步骤。 和10×10 4个大气压。 并在2200℃至2500℃的高温下，然后在所述高压下缓慢冷却得到的氮化镓熔体。

公开(公告)号：US08986447B2

公开(公告)日：2015-03-24

申请号：US13343563

申请日：2012-01-04

Applicant: Mark P. D'Evelyn

Inventor： Mark P. D'Evelyn

IPC: C30B7/10 ,  C30B29/40 ,  B01J3/00 ,  B01J3/04 ,  B01J3/06 ,  B30B11/00

CPC classification number: C30B29/406 ,  B01J3/008 ,  B01J3/042 ,  B01J3/065 ,  B01J2203/0665 ,  B01J2203/067 ,  B01J2203/068 ,  B30B11/005 ,  C30B7/10 ,  C30B29/403 ,  Y02P20/544 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1096

Abstract: A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. In a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.

Abstract translation: 一种用于加工超临界流体的高压装置及相关方法。 在具体实施例中，本装置包括胶囊，加热器，至少一个陶瓷环，但可以是多个环，任选地，存在一个或多个划痕和/或裂纹。 在具体实施例中，该装置可选地具有包含每个陶瓷环的金属套筒。 该设备还具有高强度外壳，具有相关绝缘的端部法兰和电源控制系统。 在具体实施例中，该装置能够分别访问0.2-2GPa和400-1200℃的压力和温度。