Method for improving mask layout and fabrication
    2.
    发明授权
    Method for improving mask layout and fabrication 有权
    改进掩模布局和制造的方法

    公开(公告)号:US07434197B1

    公开(公告)日:2008-10-07

    申请号:US11262148

    申请日:2005-10-28

    IPC分类号: G06F17/50

    CPC分类号: G03F7/705

    摘要: A hot spot is identified within a mask layout design. The hot spot represents a local region of the mask layout design having one or more feature geometries susceptible to producing one or more fabrication deficiencies. A test structure is generated for the identified hot spot. The test structure is defined to emulate the one or more feature geometries susceptible to producing the one or more fabrication deficiencies. The test structure is fabricated on a test wafer using specified fabrication processes. The as-fabricated test structure is examined to identify one or more adjustments to either the feature geometries of the hot spot of the mask layout design or the specified fabrication processes, wherein the identified adjustments are capable of reducing the fabrication deficiencies.

    摘要翻译: 在面罩布局设计中识别出热点。 热点表示具有容易产生一个或多个制造缺陷的一个或多个特征几何形状的面罩布局设计的局部区域。 为识别的热点产生测试结构。 测试结构被定义为模拟易于产生一个或多个制造缺陷的一个或多个特征几何形状。 使用特定的制造工艺在测试晶片上制造测试结构。 检查制造的测试结构以识别对于掩模布局设计或指定制造工艺的热点的特征几何形状的一个或多个调整,其中所识别的调整能够减少制造缺陷。