公开(公告)号：US4427638A

公开(公告)日：1984-01-24

申请号：US301627

申请日：1981-09-14

Applicant: Ralph J. Ellis ,  Richard W. Gurtler ,  Kalluri R. Sarma

Inventor： Ralph J. Ellis ,  Richard W. Gurtler ,  Kalluri R. Sarma

IPC: C30B13/00 ,  C30B13/24 ,  C30B13/06 ,  C30B13/32

CPC classification number: C30B13/24 ,  C30B13/00 ,  C30B29/60 ,  Y10S117/904 ,  Y10S117/905 ,  Y10T117/1076 ,  Y10T117/1084

Abstract: Apparatus is provided for semiconductor ribbon-to-ribbon conversion in a rigid edge mode. A combination carrier and mask is provided by which the ribbon is secured during the conversion process. The carrier holds the ribbon and simultaneously masks the edges of the ribbon from the heating effects of an impinging energy beam. The energy beam, such as a laser or electron beam, impinges on the ribbon and creates a molten zone which extends through the thickness of the ribbon. During the growth process, the molten zone is caused to move along the length of the ribbon. The mask prevents melting of the extreme edge portions of the ribbon and thus allows a rapid growth rate and a stable molten zone without sophisticated electronic equipment to gate the energy beam at the ribbon edges.

Abstract translation: 提供了用于以刚性边缘模式进行半导体色带到色带转换的装置。 提供组合载体和掩模，通过该组合载体和掩模在转换过程中固定色带。 载体保持色带并同时从着色能量束的加热效应掩盖色带的边缘。 能量束（例如激光或电子束）撞击在带上并产生延伸穿过带的厚度的熔融区。 在生长过程中，使熔融区沿带的长度移动。 掩模防止带状物的最末端部分的熔化，从而允许快速生长速率和稳定的熔融区域，而不需要复杂的电子设备来在带状边缘处浇注能量束。

公开(公告)号：US4120743A

公开(公告)日：1978-10-17

申请号：US645574

申请日：1975-12-31

Applicant: Aslan Baghdadi ,  Ralph J. Ellis

Inventor： Aslan Baghdadi ,  Ralph J. Ellis

IPC: C30B13/00 ,  C30B13/14 ,  C30B13/34 ,  B01J17/12

CPC classification number: C30B29/06 ,  C30B13/00 ,  C30B13/14 ,  C30B13/34 ,  C30B29/60 ,  Y10S117/904 ,  Y10S117/905

Abstract: A method of producing a sheet of semiconductor material directly usable for the production of solar cells is disclosed. The method comprises establishing a molten region at an edge of a sheet of semiconductor material, moving the molten region across the sheet to create a path of elongated crystal grains, establishing a molten zone along a portion of the path of the elongated crystal grains and parallel thereto, and causing the molten zone to travel in a direction transverse to the path of elongated crystal grains.

Abstract translation: 公开了一种生产可直接用于生产太阳能电池的半导体材料片的方法。 该方法包括在半导体材料片的边缘处建立熔融区域，使熔融区域跨过片材移动以产生细长晶粒的路径，沿着细长晶粒的路径的一部分建立熔融区域并且平行 并且使熔融区域沿与细长晶粒的路径横切的方向行进。

公开(公告)号：US4602980A

公开(公告)日：1986-07-29

申请号：US656390

申请日：1984-10-01

Applicant: Ralph J. Ellis ,  Ronald N. Legge ,  Israel A. Lesk

Inventor： Ralph J. Ellis ,  Ronald N. Legge ,  Israel A. Lesk

IPC: H01L21/18 ,  C30B13/00 ,  C30B13/22 ,  C30B13/24 ,  C30B29/64 ,  H01L31/04

CPC classification number: C30B13/005 ,  C30B13/24 ,  Y10S117/904 ,  Y10S117/905 ,  Y10T117/1088

Abstract: A method is disclosed for improving the crystallinity of semiconductor ribbon material while increasing the material throughput and decreasing energy requirements. The crystallinity of a ribbon of semiconductor material can be improved by forming a localized molten zone in the material and sweeping this molten zone along the length of the material. As the molten zone refreezes, the material is locally recrystallized with enhanced grain size. In accordance with the invention, two ribbons are positioned back-to-back with a slight spacing between the ribbons. Energy sources are focused on the outer surfaces of the two ribbons to create a molten zone in each of the ribbons. Because of the close proximity between the ribbons, much of the energy reradiated from each molten zone is absorbed by the adjacent ribbon. The molten zones are then swept along both of the ribbons to simultaneously cause crystal improvement in both ribbons. The total energy input required for recrystallizing two ribbons is only slightly greater than the energy required to recrystallize one ribbon. Further improvements in the process are achieved by positioning a thermal diffuser between the two ribbons and/or staggering the relative positions of the molten zones.

Abstract translation: 公开了一种用于提高半导体带状材料的结晶度同时增加材料通过量并降低能量需求的方法。 半导体材料带的结晶度可以通过在材料中形成局部熔融区域并沿着材料的长度扫过该熔融区域来改善。 随着熔融区的重熔，材料会随着晶粒尺寸的增加而局部再结晶。 根据本发明，两条带之间以较小的间距背靠背设置。 能量源集中在两个带的外表面上以在每个带中形成熔融区。 由于带之间的紧密接近，从每个熔融区域重新辐射的大部分能量被相邻的带吸收。 然后将熔融区域沿着两条带扫过，以同时在两条带上引起晶体改善。 重结晶两个带所需的总能量输入仅略微大于重结晶一个色带所需的能量。 通过将热扩散器定位在两个带之间和/或交错熔融区的相对位置来实现该过程的进一步改进。

公开(公告)号：US4510015A

公开(公告)日：1985-04-09

申请号：US506587

申请日：1983-06-23

Applicant: Ralph J. Ellis ,  Richard W. Gurtler ,  Kalluri R. Sarma

Inventor： Ralph J. Ellis ,  Richard W. Gurtler ,  Kalluri R. Sarma

IPC: C30B13/00 ,  C30B13/24 ,  C30B13/06

CPC classification number: C30B13/24 ,  C30B13/00 ,  C30B29/60 ,  Y10S117/904 ,  Y10S117/905 ,  Y10S117/911

Abstract: A method is provided for semiconductor ribbon-to-ribbon conversion in a rigid edge mode. A combination carrier and mask is provided by which the ribbon is secured during the conversion process. The carrier holds the ribbon and simultaneously masks the edges of the ribbon from the heating effects of an impinging energy beam. The energy beam, such as a laser or electron beam, impinges on the ribbon and creates a molten zone which extends through the thickness of the ribbon. During the growth process, the molten zone is caused to move along the length of the ribbon. The mask prevents melting of the extreme edge portions of the ribbon and thus allows a rapid growth rate and a stable molten zone without sophisticated electronic equipment to gate the energy beam at the ribbon edges.

Abstract translation: 提供了一种用于在刚性边缘模式中进行半导体色带到色带转换的方法。 提供组合载体和掩模，通过该组合载体和掩模在转换过程中固定色带。 载体保持色带并同时从着色能量束的加热效应掩盖色带的边缘。 能量束（例如激光或电子束）撞击在带上并产生延伸穿过带的厚度的熔融区。 在生长过程中，使熔融区沿带的长度移动。 掩模防止带状物的最末端部分的熔化，从而允许快速生长速率和稳定的熔融区域，而不需要复杂的电子设备来在带状边缘处浇注能量束。