专利检索 ap:"Ramac Divakaruni" 第 1 页

1.

发明授权
Method of making encapsulated spacers in vertical pass gate DRAM and damascene logic gates 失效
标题翻译：在垂直传输门DRAM和镶嵌逻辑门中制造封装间隔物的方法

公开(公告)号：US06974743B2

公开(公告)日：2005-12-13

申请号：US10770264

申请日：2004-02-02

申请人： Ramac Divakaruni , Stephan Kudelka , Jack Mandelman

发明人： Ramac Divakaruni , Stephan Kudelka , Jack Mandelman

IPC分类号： H01L21/28 , H01L21/336 , H01L21/8242 , H01L29/06 , H01L29/423 , H01L29/737 , H01L29/78 , H01L27/108

CPC分类号： H01L29/66537 , H01L21/28114 , H01L27/10864 , H01L27/10876 , H01L27/10891 , H01L29/0692 , H01L29/42376 , H01L29/665 , H01L29/66553 , H01L29/6656 , H01L29/6659 , H01L29/66621 , H01L29/7371 , H01L29/7834

摘要： Semiconductor devices having improved isolation are provided along with methods of fabricating such semiconductor devices. The improved isolation includes an encapsulated spacer formed within a gate region of a device.

摘要翻译： 提供具有改进的隔离的半导体器件与制造这种半导体器件的方法一起提供。改进的隔离包括形成在器件的栅极区域内的封装间隔物。